Abstract: A method for producing a layer covering the first surfaces of a structure and leaving the second surfaces uncovered including a sequence for forming an initial layer by PEALD deposition, the sequence including cycles, each including injections of first and second precursor in a reaction chamber, and plasma formation in the reaction chamber. The cycles are carried out at a temperature Tcycle such that Tcycle ? (Tmin - 20° C.), Tmin being the minimum temperature of a nominal temperature window for a PEALD deposition. The method includes exposing the initial layer to a densification plasma such that the exposure to the ion flow makes the material on the first surfaces more resistant to etching than the material on the second surfaces. The method also includes a selective etching step, such that the initial layer covers the first surfaces of the front face of the structure by leaving the second surfaces uncovered.

Abstract: A support for a semiconductor structure includes a charge-trapping layer on a base substrate. The charge-trapping layer consists of a polycrystalline main layer and, interposed in the main layer or between the main layer and the base substrate, at least one intermediate polycrystalline layer composed of a silicon and carbon alloy or carbon. The intermediate layer has a resistivity greater than 1000 ohm·cm.

Abstract: A support for a semiconductor structure includes a charge-trapping layer on a base substrate. The charge-trapping layer consists of a polycrystalline main layer and, interposed in the main layer or between the main layer and the base substrate, at least one intermediate polycrystalline layer composed of a silicon and carbon alloy or carbon. The intermediate layer has a resistivity greater than 1000 ohm·cm.