Abstract: A Hybrid Optoelectronic Neural Object Recognition System (HONORS), is disclosed, comprising two major building blocks: (1) an advanced grayscale optical correlator (OC) and (2) a massively parallel three-dimensional neural-processor. The optical correlator, with its inherent advantages in parallel processing and shift invariance, is used for target of interest (TOI) detection and segmentation. The three-dimensional neural-processor, with its robust neural learning capability, is used for target classification and identification. The hybrid optoelectronic neural object recognition system, with its powerful combination of optical processing and neural networks, enables real-time, large frame, automatic target recognition (ATR).

Abstract: High-speed, analog, fully-parallel and asynchronous building blocks are cascaded for larger sizes and enhanced resolution. A hardware-compatible algorithm permits hardware-in-the-loop learning despite limited weight resolution. A computation-intensive feature classification application has been demonstrated with this flexible hardware and new algorithm at high speed. This result indicates that these building block chips can be embedded as application-specific-coprocessors for solving real-world problems at extremely high data rates.

Abstract: A solid-state variable resistance device (10) whose resistance can be repeatedly altered by a control signal over a wide range, and which will remain stable after the signal is removed, is formed on an insulated layer (14), supported on a substrate (12) and comprises a set of electrodes (16a, 16b) connected by a layer (18) of material, which changes from an insulator to a conductor upon the injection of ions, covered by a layer (22) of material with insulating properties which permit the passage of ions, overlaid by an ion donor material (20). The ion donor material is overlaid by an insulating layer (24) upon which is deposited a control gate (26) located above the contacts. In a preferred embodiment, the variable resistance material comprises WO.sub.3, the ion donor layer comprises Cr.sub.2 O.sub.3, and the layers sandwiching the ion donor layer comprise silicon monoxide.

Abstract: A multi-layered, thin-film, digital memory having associative recall. There is a first memory matrix and a second memory matrix.

Abstract: A multijunction silicon solar cell of high efficiency is provided by providing a tunnel junction between the solar cell junctions to connect them in series, where the tunnel junction is comprised of p.sup.+ and n.sup.+ layers of high band-gap III-V or II-VI semiconductor materials that match the lattice structure of silicon, such as GaP (band-gap 2.24 eV) or ZnS (band-gap 3.6 eV), each of which has a perfect lattice match with silicon to avoid defects normally associated with lattice mismatch.

Abstract: The purity and perfection of a semiconductor is improved by depositing a patterned mask (12) of a material impervious to impurities of the semiconductor on a surface (14) of a blank (10). When a layer (40) of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings (16) in the mask (12) and will bridge the connecting portions of the mask to form a continuous layer (40) having improved purity, since only the portions (42) overlying the openings (16) are exposed to defects and impurities. The process can be reiterated and the mask translated to further improve the quality of grown layers.

Abstract: The purity and perfection of a semiconductor is improved by depositing a patterned mask (12) of a material impervious to impurities of the semiconductor on a surface (14) of a blank (10). When a layer (40) of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings (16) in the mask (12) and will bridge the connecting portions of the mask to form a continuous layer (40) having improved purity, since only the portions (42) overlying the openings (16) are exposed to defects and impurities. The process can be reiterated and the mask translated to further improve the quality of grown layers.

Abstract: Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.