Patents by Inventor Tahone Yagn

Tahone Yagn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Kink poly structure for improving random single bit failure
    Patent number: 9117752
    Abstract: A memory cell having a kinked polysilicon layer structure, or a polysilicon layer structure with a top portion being narrower than a bottom portion, may greatly reduce random single bit (RSB) failures and may improve high density plasma (HDP) oxide layer fill-in by reducing defects caused by various impurities and/or a polysilicon layer short path. A kinked polysilicon layer structure may also be applied to floating gate memory cells either at the floating gate structure or the control gate structure.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: August 25, 2015
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Shing Ann Luo, Yung-Tai Hung, Chin-Ta Su, Tahone Yagn
  • KINK POLY STRUCTURE FOR IMPROVING RANDOM SINGLE BIT FAILURE
    Publication number: 20130113031
    Abstract: A memory cell having a kinked polysilicon layer structure, or a polysilicon layer structure with a top portion being narrower than a bottom portion, may greatly reduce random single bit (RSB) failures and may improve high density plasma (HDP) oxide layer fill-in by reducing defects caused by various impurities and/or a polysilicon layer short path. A kinked polysilicon layer structure may also be applied to floating gate memory cells either at the floating gate structure or the control gate structure.
    Type: Application
    Filed: November 3, 2011
    Publication date: May 9, 2013
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Shing Ann Luo, Yung-Tai Hung, Chin-Ta Su, Tahone Yagn