Patents by Inventor Tahru Ozaki

Tahru Ozaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor apparatus formed by SAC (self-aligned contact)
    Patent number: 6483138
    Abstract: A gate electrode having a first insulating film laminated in the upper portion thereof is formed on a gate insulating film formed on a semiconductor substrate. A side wall is formed on the side wall of the gate electrode, and an insulating film is formed to cover the gate electrode and the side wall. Ion implantation is performed through the insulating film so that a diffusion layer is formed on the semiconductor substrate. An interlayer dielectric film is formed, and then the interlayer dielectric film and the insulating film are selectively etched so that an opening portion for exposing the gate insulating film is formed in a self-align manner with the gate electrode. Then, the gate insulating film in the bottom portion of the opening portion is removed so that the surface of the semiconductor substrate is exposed. Then, a wiring layer connected to the exposed surface of the semiconductor substrate is formed.
    Type: Grant
    Filed: June 2, 2000
    Date of Patent: November 19, 2002
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mariko Habu, Kazumasa Sunouchi, Masami Aoki, Tahru Ozaki