Abstract: Disclosed is a method for forming a silicon dioxide layer on a substrate by radio-frequency deposition from a plasma comprising oxygen, argon, and tetraethyl orthosilicate (TEOS) or tetramethyl cyclotetrasiloxane (TMCTS). A negative bias is imparted to the substrate. The resulting ion bombardment induces surface migration. Because TEOS and TMCTS have a relatively high mean free path for surface migration, the filling of soft spots and key holes is promoted.

Abstract: The target of a color CRT includes a plurality of color stripe triads which are oriented on a (111) surface parallel to the <112> crystallographic direction. The pattern of the stripe triads is etched using a SiO.sub.2 etch mask deposited directly on the YAG and an etchant comprising a hot mixture of sulfuric and phosphoric acids.

Abstract: A novel epitaxial phosphor having high luminosity at about 540 nm has the composition (Y.sub.3-x-y Tb.sub.x RE.sub.y)(Al.sub.5-w Ga.sub.w)O.sub.12, with RE being one (or more) 4f-type rare earth(s) other than Tb, 0.09<x<0.7, and 1.5<w<2.5. In preferred embodiments, RE is Lu, Yb, or Tm, 0.1<x<0.3, and 1.8<w<2.2. In further preferred embodiments, the phosphor composition is adjusted to yield a material having a lattice constant within 0.002 nm of the lattice constant of the substrate, typically Y.sub.3 Al.sub.5 O.sub.12. The phosphor is typically grown by liquid phase epitaxy and has application in a variety of apparatus, including avionic displays and flight simulators.

Abstract: The disclosed display apparatus comprises a novel high intensity broadband-emitting phosphor. The phosphor is single crystal material in which Tb acts as sensitizer of Ce, the activator. The composition of the phosphor is (Y.sub.3-x-y-z Ce.sub.x Tb.sub.y RE.sub.z) Al.sub.5-w X.sub.w O.sub.12, where RE is one or more 4f-type rare earths other than Y, Ce, and Tb, X is Sc, Ga, or In, and 0<x.ltoreq.0.06, 0<y.ltoreq.0.5, 0.ltoreq.z.ltoreq.2, 0.ltoreq.w.ltoreq.3. In preferred embodiments z and w are either zero, or RE is Lu and X is Ga. The phosphor is typically grown epitaxially by LPE on a Y.sub.3 Al.sub.5 O.sub.12 substrate, and has application in a variety of apparatus, including aircraft cockpit head-up displays and flight simulators.