Patents by Inventor Tai Chen

Tai Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240138171
    Abstract: An organic light emitting element includes a substrate, a first electrode, an organic light emitting layer, and a fluorine-containing ion residue region. The first electrode is over the substrate. The organic light emitting layer is over the first electrode. The fluorine-containing ion residue region is on at least one surface of the organic light emitting layer.
    Type: Application
    Filed: October 24, 2023
    Publication date: April 25, 2024
    Inventors: HUEI-SIOU CHEN, LI-CHEN WEI, KUO-CHENG HSU, KER TAI CHU
  • Publication number: 20240136420
    Abstract: A thin film transistor includes a substrate, a semiconductor layer, a gate insulating layer, a gate, a source and a drain. The semiconductor layer is located above the substrate. The gate insulating layer is located above the semiconductor layer. The gate is located above the gate insulating layer and overlapping with the semiconductor layer. The gate includes a first portion, a second portion and a third portion. The first portion is extending along the surface of the gate insulating layer and directly in contact with the gate insulating layer. The second portion is separated from the gate insulating layer. Taking the surface of the gate insulating layer as a reference, the top surface of the second portion is higher than the top surface of the first portion. The third portion connects the first portion to the second portion. The source and the drain are electrically connected to the semiconductor layer.
    Type: Application
    Filed: December 1, 2022
    Publication date: April 25, 2024
    Applicant: AUO Corporation
    Inventors: Kuo-Jui Chang, Wen-Tai Chen, Chi-Sheng Chiang, Yu-Chuan Liao, Chien-Sen Weng, Ming-Wei Sun
  • Patent number: 11966077
    Abstract: A light emission apparatus includes a laser diode configured to emit a light; a laser driver electrically coupled to the laser diode, the laser driver being configured to drive the laser diode to generate the light; and an optical module arranged to receive the light emitted by the laser diode, the optical module comprising at least one optical element and being configured to adjust the light and emits a transmitting light; wherein the transmitting light emits from the optical module with an illumination angle and the optical module adjusts the light to vary the illumination angle.
    Type: Grant
    Filed: July 8, 2019
    Date of Patent: April 23, 2024
    Assignee: Artilux, Inc.
    Inventors: Yun-Chung Na, Chien-Lung Chen, Chieh-Ting Lin, Yu-Yi Hsu, Hui-Wen Chen, Bo-Jiun Chen, Shih-Tai Chuang
  • Patent number: 11959101
    Abstract: A cell activation reactor and a cell activation method are provided. The cell activation reactor includes a body, a rotating part, an upper cover, a microporous film, and multiple baffles. The body has an accommodating space, which is suitable for accommodating multiple cells and multiple magnetic beads. The rotating part is disposed in the accommodating space and includes multiple impellers. The microporous film is disposed in the accommodating space and covers multiple holes of the accommodating space. The baffles are disposed in the body. When the rotating part is driven to rotate, the interaction between the baffles and the impellers separates the cells and the magnetic beads.
    Type: Grant
    Filed: November 26, 2021
    Date of Patent: April 16, 2024
    Assignee: Industrial Technology Research Institute
    Inventors: Ting-Hsuan Chen, Kuo-Hsing Wen, Ya-Hui Chiu, Nien-Tzu Chou, Ching-Fang Lu, Cheng-Tai Chen, Ting-Shuo Chen, Pei-Shin Jiang
  • Patent number: 11961738
    Abstract: In a method of forming a pattern, a first pattern is formed over an underlying layer, the first pattern including main patterns and a lateral protrusion having a thickness of less than 25% of a thickness of the main patterns, a hard mask layer is formed over the first pattern, a planarization operation is performed to expose the first pattern without exposing the lateral protrusion, a hard mask pattern is formed by removing the first pattern while the lateral protrusion being covered by the hard mask layer, and the underlying layer is patterned using the hard mask pattern as an etching mask.
    Type: Grant
    Filed: February 12, 2021
    Date of Patent: April 16, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chin-Ta Chen, Hua-Tai Lin, Han-Wei Wu, Jiann-Yuan Huang
  • Publication number: 20240120236
    Abstract: A method includes etching a gate stack in a wafer to form a trench, depositing a silicon nitride liner extending into the trench, and depositing a silicon oxide layer. The process of depositing the silicon oxide layer includes performing a treatment process on the wafer using a process gas including nitrogen and hydrogen, and performing a soaking process on the wafer using a silicon precursor.
    Type: Application
    Filed: April 25, 2023
    Publication date: April 11, 2024
    Inventors: Tai-Jung Kuo, Po-Cheng Shih, Wan Chen Hsieh, Zhen-Cheng Wu, Chia-Hui Lin, Tze-Liang Lee
  • Patent number: 11953738
    Abstract: The present invention discloses a display including a display panel and a light redirecting film disposed on the viewing side of the display panel. The light redirecting film comprises a light redistribution layer, and a light guide layer disposed on the light redistribution layer. The light redistribution layer includes a plurality of strip-shaped micro prisms extending along a first direction and arranged at intervals and a plurality of diffraction gratings arranged at the bottom of the intervals between the adjacent strip-shaped micro prisms, wherein each of the strip-shaped micro prisms has at least one inclined light-guide surface, and the bottom of each interval has at least one set of diffraction gratings, and the light guide layer is in contact with the strip-shaped micro prisms and the diffraction gratings.
    Type: Grant
    Filed: March 29, 2022
    Date of Patent: April 9, 2024
    Assignee: BenQ Materials Corporation
    Inventors: Cyun-Tai Hong, Yu-Da Chen, Hsu-Cheng Cheng, Meng-Chieh Wu, Chuen-Nan Shen, Kuo-Jung Huang, Wei-Jyun Chen, Yu-Jyuan Dai
  • Patent number: 11944486
    Abstract: An analysis method and an electronic apparatus for breast image are provided. The method includes the following steps. One or more breast ultrasound images are obtained. The breast ultrasound images are used for forming a three-dimensional (3D) breast model. A volume of interest (VOI) in the breast ultrasound image is obtained by applying a detection model on the 3D breast model. The VOI is compared with a tissue segmentation result. The VOI is determined as a false positive according to a compared result between the VOI and the tissue segmentation result. The compared result includes that the VOI is located at a glandular tissue based on the tissue segmentation result. In response to the VOI being located in the glandular tissue of the tissue segmentation result, the VOI is compared with the lactiferous duct in the 3D breast model.
    Type: Grant
    Filed: July 19, 2021
    Date of Patent: April 2, 2024
    Assignee: TAIHAO MEDICAL INC.
    Inventors: Jen-Feng Hsu, Hong-Hao Chen, Rong-Tai Chen, Hsin-Hung Lai, Wei-Han Teng
  • Publication number: 20240105518
    Abstract: A first group of semiconductor fins are over a first region of a substrate, the substrate includes a first stepped profile between two of the first group of semiconductor fins, and the first stepped profile comprises a first lower step, two first upper steps, and two first step rises extending from opposite sides of the first lower step to the first upper steps. A second group of semiconductor fins are over a second region of the substrate, the substrate includes a second stepped profile between two of the second group of semiconductor fins, and the second stepped profile comprises a second lower step, two second upper steps, and two second step rises extending from opposite sides of the second lower step to the second upper steps, in which the second upper steps are wider than the first upper steps in the cross-sectional view.
    Type: Application
    Filed: January 11, 2023
    Publication date: March 28, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chin-Ta CHEN, Han-Wei WU, Yuan-Hsiang LUNG, Hua-Tai LIN
  • Patent number: 11940388
    Abstract: Example methods are provided to improve placement of an adaptor (210,220) to a mobile computing device (100) to measure a test strip (221) coupled to the adaptor (220) with a camera (104) and a screen (108) on a face of the mobile computing device (100). The method may include displaying a light area on a first portion of the screen (108). The first portion may be adjacent to the camera (104). The light area and the camera (104) may be aligned with a key area of the test strip (221) so that the camera (104) is configured to capture an image of the key area. The method may further include providing first guiding information for a user to place the adaptor (210,220) to the mobile computing device (100) according to a position of the light area on the screen (108).
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: March 26, 2024
    Assignee: IXENSOR CO., LTD.
    Inventors: Yenyu Chen, An Cheng Chang, Tai I Chen, Su Tung Yang, Chih Jung Hsu, Chun Cheng Lin, Min Han Wang, Shih Hao Chiu
  • Publication number: 20240096400
    Abstract: A memory device includes a memory bank with a memory cell connected to a local bit line and a word line. A first local data latch is connected to the local bit line and has an enable terminal configured to receive a first local clock signal. A word line latch is configured to latch a word line select signal, and has an enable terminal configured to receive a second local clock signal. A first global data latch is connected to the first local data latch by a global bit line, and the first global data latch has an enable terminal configured to receive a global clock signal. A global address latch is connected to the word line latch and has an enable terminal configured to receive the global clock signal. A bank select latch is configured to latch a bank select signal, and has an enable terminal configured to receive the second local clock signal.
    Type: Application
    Filed: January 23, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Yuan CHEN, Hau-Tai SHIEH, Cheng Hung LEE
  • Publication number: 20240094282
    Abstract: A circuit test structure includes a chip including a conductive line which traces a perimeter of the chip. The circuit test structure further includes an interposer electrically connected to the chip, wherein the conductive line is over both the chip and the interposer. The circuit test structure further includes a test structure connected to the conductive line. The circuit test structure further includes a testing site, wherein the test structure is configured to electrically connect the testing site to the conductive line.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 21, 2024
    Inventors: Ching-Fang CHEN, Hsiang-Tai LU, Chih-Hsien LIN
  • Patent number: 11935954
    Abstract: A semiconductor device structure includes a fin structure formed over a substrate. The structure also includes nanostructures formed over the fin structure. The structure also includes a gate structure wrapped around the nanostructures. The structure also includes a first inner spacer formed beside the gate structure. The structure also includes a second inner spacer formed beside the first inner spacer. The structure also includes spacer layers formed over opposite sides of the gate structure above the nanostructures. The structure also includes source/drain epitaxial structures formed over opposite sides of the fin structure. The second inner spacer is partially embedded in the source/drain epitaxial structures.
    Type: Grant
    Filed: July 30, 2021
    Date of Patent: March 19, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Bwo-Ning Chen, Xusheng Wu, Chang-Miao Liu, Chien-Tai Chan
  • Publication number: 20240085803
    Abstract: Photolithography overlay errors are a source of patterning defects, which contribute to low wafer yield. An interconnect formation process that employs a patterning photolithography/etch process with self-aligned interconnects is disclosed herein. The interconnection formation process, among other things, improves a photolithography overlay (OVL) margin since alignment is accomplished on a wider pattern. In addition, the patterning photolithography/etch process supports multi-metal gap fill and low-k dielectric formation with voids.
    Type: Application
    Filed: November 20, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tai-I Yang, Wei-Chen Chu, Hsiang-Wei Liu, Shau-Lin Shue, Li-Lin Su, Yung-Hsu Wu
  • Publication number: 20240088124
    Abstract: A semiconductor structure, comprising a redistribution layer (RDL) including a dielectric layer and a conductive trace within the dielectric layer; a first conductive member disposed over the RDL and electrically connected with the conductive trace; a second conductive member disposed over the RDL and electrically connected with the conductive trace; a first die disposed over the RDL; a second die disposed over the first die, the first conductive member and the second conductive member; and a connector disposed between the second die and the second conductive member to electrically connect the second die with the conductive trace, wherein the first conductive member is electrically isolated from the second die.
    Type: Application
    Filed: November 24, 2023
    Publication date: March 14, 2024
    Inventors: HSIANG-TAI LU, SHUO-MAO CHEN, MILL-JER WANG, FENG-CHENG HSU, CHAO-HSIANG YANG, SHIN-PUU JENG, CHENG-YI HONG, CHIH-HSIEN LIN, DAI-JANG CHEN, CHEN-HUA LIN
  • Patent number: 11927312
    Abstract: The disclosure provides an electronic device, including a circuit board, multiple semiconductor components, a first light reflecting structure, and a second light reflecting structure. The circuit board includes a substrate, and the substrate may have a first surface and at least one side surface. The multiple semiconductor components are disposed on the first surface. The first light reflecting structure is disposed on the first surface. The second light reflecting structure is disposed on the first surface and the at least one side surface.
    Type: Grant
    Filed: April 18, 2022
    Date of Patent: March 12, 2024
    Assignee: Innolux Corporation
    Inventors: Chin-Chia Huang, Chieh-Ying Chen, Jia-Huei Lin, Chin-Tai Hsu, Tzu-Chien Huang, Fu-Sheng Tsai
  • Patent number: 11929109
    Abstract: Disclosed herein are related to a memory system including unit storage circuits. In one aspect, each of the unit storage circuits abuts an adjacent one of the unit storage circuits. In one aspect, each of the unit storage circuits includes a first group of memory cells, a second group of memory cells, a first sub-word line driver to apply a first control signal to the first group of memory cells through a first sub-word line extending along a direction, and a second sub-word line driver to apply a second control signal to the second group of memory cells through a second sub-word line extending along the direction. In one aspect, the memory system includes a common word line driver abutting one of the unit storage circuits and configured to apply a common control signal to the unit storage circuits through a word line extending along the direction.
    Type: Grant
    Filed: April 25, 2023
    Date of Patent: March 12, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Tzu Chen, Ching-Wei Wu, Hau-Tai Shieh, Hung-Jen Liao
  • Patent number: 11919126
    Abstract: In an embodiment, a chemical mechanical planarization (CMP) system includes: a monolithic platen within a platen housing, wherein the monolithic platen is formed of a single piece of material, wherein the monolithic platen includes: a first portion within a first opening, and a second portion within a second opening, wherein the first portion has a different diameter than the second portion; and a polishing fluid delivery module above the monolithic platen, wherein the polishing fluid delivery module is configured to deliver slurry to the monolithic platen during performance of CMP.
    Type: Grant
    Filed: May 12, 2021
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsung-Lung Lai, Cheng-Ping Chen, Shih-Chung Chen, Sheng-Tai Peng
  • Patent number: 11921947
    Abstract: A touch function setting method is provided. The method comprising: receiving a sequence parameter which includes multiple clicks, each of the clicks is corresponding to one of areas of a touch panel or screen; receiving a function parameter corresponding to the sequence parameter, the function parameter is corresponding to activate a function; and storing a group of touch function parameters, which includes the sequence parameter and the function parameter.
    Type: Grant
    Filed: February 18, 2022
    Date of Patent: March 5, 2024
    Assignee: EGALAX_EMPIA TECHNOLOGY INC.
    Inventors: Chin-Fu Chang, Shang-Tai Yeh, Chia-Ling Sun, Jia-Ming Chen
  • Patent number: 11884912
    Abstract: A cell culture device includes a culture unit, a gas supply unit, a first pressure unit, at least one inspecting unit and a control unit. The culture unit contains a cell culture liquid. The gas supply unit, connected with the culture unit, is used for transmitting a culture gas into the culture unit. The first pressure unit, connected with the culture unit, is used for applying a pressure to the cell culture liquid in the culture unit. The at least one inspecting unit, connected with the culture unit, is used for receiving the cell culture liquid for inspection. The control unit, electrically coupled with the culture unit, the first pressure unit, the gas supply unit and the at least one inspecting unit, is used for monitoring corresponding condition parameters to determine respective operations. In addition, a cell culture method for the cell culture device is also provided.
    Type: Grant
    Filed: December 26, 2019
    Date of Patent: January 30, 2024
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Kuo-Hsing Wen, Ting-Hsuan Chen, Cheng-Tai Chen, Chien-An Chen, Su-Fung Chiu, Yung-Chi Chang, Nien-Jen Chou, Ping-Jung Wu, Shaw-Hwa Parng, Pei-Shin Jiang