Patents by Inventor Tai-Fen Lin

Tai-Fen Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6479859
    Abstract: A method is disclosed for forming a split-gate flash memory cell where the floating gate of the cell is self-aligned to isolation, to source and to word line. This multi-self-aligned structure, which provides the maximum shrinkage of the cell that is possible, is also disclosed. The multi-self-alignment is accomplished by first defining the floating gate at the same time the trench isolation is formed, and then self-aligning the source to the floating gate by using a nitride layer as a hard mask in place of the traditional polyoxide, and finally forming a polysilicon spacer to align the word line to the floating gate. Furthermore, a thin floating gate is used to form a thin and sharp poly tip through the use of a “smiling effect” to advantage.
    Type: Grant
    Filed: February 6, 2001
    Date of Patent: November 12, 2002
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chia-Ta Hsieh, Tai-Fen Lin, Wen-Ting Chu, Chuang-Ke Yeh, Hung-Cheng Sung, Di-Son Kuo
  • Publication number: 20010022375
    Abstract: A method is disclosed for forming a split-gate flash memory cell where the floating gate of the cell is self-aligned to isolation, to source and to word line. This multi-self-aligned structure, which provides the maximum shrinkage of the cell that is possible, is also disclosed. The multi-self-alignment is accomplished by first defining the floating gate at the same time the trench isolation is formed, and then self-aligning the source to the floating gate by using a nitride layer as a hard mask in place of the traditional polyoxide, and finally forming a polysilicon spacer to align the word line to the floating gate. Furthermore, a thin floating gate is used to form a thin and sharp poly tip through the use of a “smiling effect” to advantage.
    Type: Application
    Filed: February 6, 2001
    Publication date: September 20, 2001
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
    Inventors: Chia-Ta Hsieh, Tai-Fen Lin, Wen-Ting Chu, Chuang-Ke Yeh, Hung-Cheng Sung, Di-Son Kuo
  • Patent number: 6204126
    Abstract: A method is disclosed for forming a split-gate flash memory cell where the floating gate of the cell is self-aligned to isolation, to source and to word line. This multi-self-aligned structure, which provides the maximum shrinkage of the cell that is possible, is also disclosed. The multi-self-alignment is accomplished by first defining the floating gate at the same time the trench isolation is formed, and then self-aligning the source to the floating gate by using a nitride layer as a hard mask in place of the traditional polyoxide, and finally forming a polysilicon spacer to align the word line to the floating gate. Furthermore, a thin floating gate is used to form a thin and sharp poly tip through the use of a “smiling effect” to advantage.
    Type: Grant
    Filed: February 18, 2000
    Date of Patent: March 20, 2001
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chia-Ta Hsieh, Tai-Fen Lin, Wen-Ting Chu, Chuang-Ke Yeh, Hung-Cheng Sung, Di-Son Kuo