Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: The present invention relates to a teeth washer structure, which includes: a guiding tube and an ejecting tube; the guiding tube includes a connection part, a tube body, an engage part and a first flow channel formed therein, a surface of the connection part is formed with a thread, and the portion of the first flow channel defined in the engage part is formed with a gradually-shrinking structure. One end of the ejecting tube is formed with a water inlet part connected to and communicated with the connection part in a watertight manner, another end thereof is disposed with an ejecting nozzle, the end of the ejecting tube where the ejecting nozzle is disposed is formed with a bendable structure, the interior of the ejecting tube is formed with a second flow channel mutually communicated with the first flow channel.

Abstract: A low-density alloy for a golf club head includes 84 wt %-94 wt % of Ti, 6.5 wt %-9.5 wt % of Al, and/or V less than 1.5 wt %, providing a Ti—Al—V-based alloy having a density smaller than 4.40 g/cm3. Trace elements such as Mo, Cr, Fe, Si, and B may be added into the Ti—Al—V-based alloy to provide a titanium alloy having a low density and high elongation.

Abstract: A reelable keyboard, which includes a soft keyboard, a first shell body, and a second shell body. The soft keyboard is connected between the first shell body and the second shell body. The first shell body has a winding mechanism therein used to wind up the soft keyboard. A positioning button disposed on the first shell body is used to control whether the soft keyboard is pulled out from or is wound into the first shell body. When the keyboard is to be used, it is only necessary to pull out the soft keyboard from the first shell body. When not in use, the soft keyboard is wound in the first shell body. Thereby, the volume of the keyboard can be effectively shrunk to facilitate portability.