Abstract: The present invention relates to an apparatus for cleaning a semiconductor substrate. The apparatus has a chamber including a treating room and a drying room located on an upper portion of the treating room. A supply pipe and an exhaust pipe are provided in the drying room. The supply pipe supplies isopropyl alcohol. In the exhaust pipe, a fluid in the drying room is exhausted. The exhaust pipe is arranged at both sides of the drying room in parallel to an arrangement direction of wafers. A plurality of exhaust ports are formed in each of exhaust pipes.

Abstract: Provided are exemplary methods and equipment for wet etching processes that utilize etchant solutions at elevated temperatures, particularly for wet etch processes incorporated in the production of semiconductor devices. According to the exemplary methods, the semiconductor wafers to be etched are preheated using one or more of a variety of methods and apparatus prior to immersion in the hot etchant solution. This preheating of the semiconductor wafers reduces or eliminates temperature variation in etchant solution resulting from the insertion of the semiconductor wafers thereby improving the consistency and repeatability of the etch process.