Abstract: Disclosed are a source driver and a method of detecting crack of a display panel. A source driver may comprise a first circuit configured to apply first data to data lines connected to sub-pixels of a display panel to charge a first driving voltage; and a second circuit formed on the display panel that applies the first driving voltage to a detection line formed on the display panel to detect the presence of cracks in the display panel based on the illumination status of the sub-pixels, wherein the detection line includes a first detection node and a second detection node formed on one side of the display panel along its extension direction, wherein the first detection node is connected to data lines of the first and third sub-pixels, and wherein the second detection node is connected to data line of the second sub-pixel.

Abstract: The present invention relates to a high-strength and high-manganese steel sheet suitable for an outer panel or a vehicle body of a transport vehicle and, more specifically, to a high-strength and high-manganese steel sheet having excellent vibration-proof properties and a method for producing the same.

Abstract: Provided is a high Mn steel sheet and a manufacturing method therefor, the steel sheet comprising, by wt %: 0-0.1% or less of C; 8-30% of Mn; 0.1% or less of P; 0.02% or less of S; 0.10 or less of N; 0-1.00 of Ti; and Fe and inevitable impurities, wherein a microstructure has epsilon martensite and austenite, and the average particle diameter of the martensite and the austenite is 2 ?m or less.

Abstract: The present invention relates to an ultrahigh-strength steel sheet and a manufacturing method therefor. More specifically, the present invention can provide an ultra-high strength steel sheet which can ensure weldability and a delayed fracture resistance property by controlling the contents of elements affecting platability along with the contents of austenite-stabilizing elements and increasing twin formation through re-rolling, and simultaneously improve impact characteristics and workability by ensuring excellent yield strength and ductility.

Abstract: Provided is a supercooling refrigerator including, so as to supercool foods such as fish or meat and more uniformly and stably maintain a temperature in a storage chamber supercooling the foods, a body including a storage chamber storing goods such as the fish or meat in a supercooled state, a door installed in the body, a plurality of shelves installed in the storage chamber, on which the goods are stored, a cooling unit cooling internal air of the storage chamber, a cooling air supplying unit circulating the air cooled by the cooling unit into the storage chamber, and a cool air controlling unit controlling the temperature of the cool air supplied from the cool air supplying unit in a supercooling temperature range of the stored goods.

Abstract: The present invention relates to a high-strength and high-manganese steel sheet suitable for an outer panel or a vehicle body of a transport vehicle and, more specifically, to a high-strength and high-manganese steel sheet having excellent vibration-proof properties and a method for producing the same.

Abstract: The present invention relates to an ultrahigh-strength steel sheet and a manufacturing method therefor. More specifically, the present invention can provide an ultra-high strength steel sheet which can ensure weldability and a delayed fracture resistance property by controlling the contents of elements affecting platability along with the contents of austenite-stabilizing elements and increasing twin formation through re-rolling, and simultaneously improve impact characteristics and workability by ensuring excellent yield strength and ductility.

Abstract: Provided is a supercooling refrigerator including, so as to supercool foods such as fish or meat and more uniformly and stably maintain a temperature in a storage chamber supercooling the foods, a body including a storage chamber storing goods such as the fish or meat in a supercooled state, a door installed in the body, a plurality of shelves installed in the storage chamber, on which the goods are stored, a cooling unit cooling internal air of the storage chamber, a cooling air supplying unit circulating the air cooled by the cooling unit into the storage chamber, and a cool air controlling unit controlling the temperature of the cool air supplied from the cool air supplying unit in a supercooling temperature range of the stored goods.

Abstract: In order to stably provide customers with beverages in a supercooled state without impact, the present invention provides a vending machine which sells beverages, the vending machine including: a main body which has a storage chamber that accommodates beverages and stores the beverages in a supercooled state; racks which are disposed in the storage chamber and on which the beverages are placed; a cooling unit which cools air in the storage chamber; a cool air supplying unit which circulates air cooled by the cooling unit into the storage chamber; a cool air controlling unit which controls a temperature of cool air supplied from the cool air supplying unit in a supercooled temperature range of the canned beverage; and a dispensing unit which withdraws the beverage placed on the rack while keeping the beverage supercooled, and moves the beverage to an outlet of the main body.

Abstract: Semiconductor devices including a trench isolation layer are provided. The semiconductor device includes a substrate having a trench therein, a liner insulation layer that covers a bottom surface and sidewalls of the trench and includes micro trenches located at bottom inner corners of the liner insulation layer, a first isolating insulation layer filling the micro trenches and a lower region of the trench that are surrounded by the liner insulation layer, and a second isolating insulation layer filling the trench on the first isolating insulation layer. The liner insulation layer on sidewalls of an upper region of the trench having a thickness that gradually increases toward a bottom surface of the trench, and the liner insulation layer on sidewalls of the lower region of the trench having a thickness that is uniform. Related methods are also provided.

Abstract: Semiconductor devices including a trench isolation layer are provided. The semiconductor device includes a substrate having a trench therein, a liner insulation layer that covers a bottom surface and sidewalls of the trench and includes micro trenches located at bottom inner corners of the liner insulation layer, a first isolating insulation layer filling the micro trenches and a lower region of the trench that are surrounded by the liner insulation layer, and a second isolating insulation layer filling the trench on the first isolating insulation layer. The liner insulation layer on sidewalls of an upper region of the trench having a thickness that gradually increases toward a bottom surface of the trench, and the liner insulation layer on sidewalls of the lower region of the trench having a thickness that is uniform. Related methods are also provided.

Abstract: Semiconductor devices including a trench isolation layer are provided. The semiconductor device includes a substrate having a trench therein, a liner insulation layer that covers a bottom surface and sidewalls of the trench and includes micro trenches located at bottom inner corners of the liner insulation layer, a first isolating insulation layer filling the micro trenches and a lower region of the trench that are surrounded by the liner insulation layer, and a second isolating insulation layer filling the trench on the first isolating insulation layer. The liner insulation layer on sidewalls of an upper region of the trench having a thickness that gradually increases toward a bottom surface of the trench, and the liner insulation layer on sidewalls of the lower region of the trench having a thickness that is uniform. Related methods are also provided.

Abstract: A method for fabricating a carbon hard mask layer includes: loading a substrate with a pattern target layer into a chamber; performing a primary thermal treatment on the substrate; depositing a carbon hard mask layer over the pattern target layer by using CxHy gas to perform the primary thermal treatment; performing a secondary thermal treatment on the substrate on which the carbon hard mask layer is deposited; and performing an oxygen treatment on the carbon hard mask layer.

Abstract: Semiconductor devices including a trench isolation layer are provided. The semiconductor device includes a substrate having a trench therein, a liner insulation layer that covers a bottom surface and sidewalls of the trench and includes micro trenches located at bottom inner corners of the liner insulation layer, a first isolating insulation layer filling the micro trenches and a lower region of the trench that are surrounded by the liner insulation layer, and a second isolating insulation layer filling the trench on the first isolating insulation layer. The liner insulation layer on sidewalls of an upper region of the trench having a thickness that gradually increases toward a bottom surface of the trench, and the liner insulation layer on sidewalls of the lower region of the trench having a thickness that is uniform. Related methods are also provided.

Abstract: A method for fabricating a carbon hard mask layer includes: loading a substrate with a pattern target layer into a chamber; performing a primary thermal treatment on the substrate; depositing a carbon hard mask layer over the pattern target layer by using CxHy gas to perform the primary thermal treatment; performing a secondary thermal treatment on the substrate on which the carbon hard mask layer is deposited; and performing an oxygen treatment on the carbon hard mask layer.

Abstract: A method for fabricating a semiconductor device includes forming an interlayer dielectric layer including contact holes on a semiconductor substrate, forming contact patterns by filling the contact holes with a conductive material, removing the interlayer dielectric layer to expose the contact patterns, forming a spacer which has a first thickness and surrounds at least a portion of sidewalls of the contact patterns, forming a bit line extending in one direction of the contact pattern provided with the spacer, and removing the spacer to form an air gap in between the contact pattern and the bit line.

Abstract: A semiconductor device having high aspect ratio isolation trenches and a method for manufacturing the same is presented. The semiconductor device includes a semiconductor substrate, a first insulation layer, and a second insulation layer. The semiconductor substrate has a second trench that is wider than a first trench. The first insulation layer is partially formed within the wider second trench in which the first insulation layer when formed clogs the opening of the narrower first trench. A cleaning of the first insulation layer unclogs the opening of the narrower first trench in which a second insulation layer can then be formed within both the first and second trenches.

Abstract: A semiconductor device having high aspect ratio isolation trenches and a method for manufacturing the same is presented. The semiconductor device includes a semiconductor substrate, a first insulation layer, and a second insulation layer. The semiconductor substrate has a second trench that is wider than a first trench. The first insulation layer is partially formed within the wider second trench in which the first insulation layer when formed clogs the opening of the narrower first trench. A cleaning of the first insulation layer unclogs the opening of the narrower first trench in which a second insulation layer can then be formed within both the first and second trenches.

Abstract: Provided are a coated steel sheet, a hot press formed product using the steel sheet, and a producing method thereof. Conditions for hot-dip coating bath are optimized when an aluminum-coated steel sheet is produced using a hot rolled steel sheet or a cold rolled steel sheet, and processes are controlled during production of a hot press formed product from the steel sheet, thereby forming a coating layer having a high ratio of (Fe3Al+FeAl) compound layer on the surface of the steel sheet. In cases where the (Fe3Al+FeAl) compound layer has an appropriate occupancy ratio with respect to the whole thickness of the coating layer, good resistance against crack and corrosion can be achieved to improve a local corrosion resistance of the hot press formed product, particularly, a pitting corrosion resistance. Therefore, high-quality hot press formed products can be produced with high productivity and lower costs.

Abstract: A semiconductor device having high aspect ratio isolation trenches and a method for manufacturing the same is presented. The semiconductor device includes a semiconductor substrate, a first insulation layer, and a second insulation layer. The semiconductor substrate has a second trench that is wider than a first trench. The first insulation layer is partially formed within the wider second trench in which the first insulation layer when formed clogs the opening of the narrower first trench. A cleaning of the first insulation layer unclogs the opening of the narrower first trench in which a second insulation layer can then be formed within both the first and second trenches.