Abstract: A method of selecting alignment marks, to be detected, from a plurality of alignment marks formed on a substrate includes the step of calculating a deviation between a distance of a designed position of an alignment mark from a reference position and a reference value, with respect to each of the plurality of alignment marks. The alignment marks, to be detected, are selected based on the deviations.

Abstract: In an exposure system, a predetermined wafer (5) is exposed with the first exposure layout by using a projection optical system (4) for projecting the pattern of a reticle (2) onto the wafer, an illumination device (10) and light-receiving device (11) for detecting a plurality of plane positions on the wafer (5), and a driving unit for driving the wafer (5) along the optical axis of the projection optical system (4). Prior to the second exposure with the second exposure layout at the second exposure field size, a position where a plane position is to be detected is determined on the basis of at least one of the first exposure field size, the first exposure layout, and underlayer information of the first exposure. Then, the plane position is detected.

Abstract: According to an aligning method, positions of measurement marks at a plurality of shot positions on a substrate are measured, measurement values are statistically processed, and a master and the substrate are aligned. When a plurality of measurement marks exist in a shot, measurement marks to be used for alignment are selected from them independently of each other. An alignment measurement sample shot which is not adversely affected by a shot size is selected, so an alignment precision is improved.

Abstract: A predetermined wafer (5) is exposed with the first exposure layout by using a projection optical system (4) for projecting the pattern of a reticle (2) onto the wafer, an illumination device (10) and light-receiving device (11) for detecting a plurality of plane positions on the wafer (5), and a driving unit for driving the wafer (5) along the optical axis of the projection optical system (4). Prior to the second exposure with the second exposure layout at the second exposure field size, a position where a plane position is to be detected is determined on the basis of at least one of the first exposure field size, the first exposure layout, and underlayer information of the first exposure. Then, the plane position is detected.

Abstract: An aligning method includes steps of partitioning an original mask into a plurality of areas in which respective types of patterns are formed, providing respective exposure information corresponding to the patterns in different areas, on a pattern-by-pattern basis, and exposing a substrate to one type of pattern of the original mask after exposing the substrate to another type of pattern of the original mask, on the basis of the respective exposure information.

Abstract: A projection aligner wherein light from a light source is passed through a mask so as to focus an image of a pattern of the mask on a wafer, characterized in that at least one sensor for monitoring a luminosity and a distribution thereof is disposed in an optical path between the light source and the mask, whereby a luminosity and a distribution thereof on the wafer can be controlled to proper values. The projection aligner is effective for application to minute processing technologies for the production of semiconductor devices, etc.

Abstract: A projection aligner wherein light from a light source is passed through a mask so as to focus an image of a pattern of the mask on a wafer, characterized in that at least one sensor for monitoring a luminosity and a distribution thereof is disposed in an optical path between the light source and the mask, whereby a luminosity and a distribution thereof on the wafer can be controlled to proper values. The projection aligner is effective for application to minute processing technologies for the production of semiconductor devices, etc.

Abstract: A projection aligner wherein light from a light source is passed through a mask so as to focus an image of a pattern of the mask on a wafer, characterized in that at least one sensor for monitoring a luminosity and a distribution thereof is disposed in an optical path between the light source and the mask, whereby a luminosity and a distribution thereof on the wafer can be controlled to proper values. The projection aligner is effective for application to minute processing technologies for the production of semiconductor devices, etc.