Abstract: The present invention relates to radiation cross-linked collagen gel, and a preparation method and usage method thereof. To this end, the present invention comprises a cross-linked collagen material made by irradiating liquid collagen with radioactive rays, wherein the concentration of said collagen is specifically 0.1-10% (W/V), and the radiation dose (dose rate×time) is 0.1-40 kGy on the basis of 1 kGy/hr. The present invention configured as above can prepare a formulated collagen gel using a physical cross-linking method instead of a chemical cross-linking method, specifically carries out the formulation by mixing biocompatible materials, and provides a method capable of using a cross-linked collagen hydrogel in wound dressings, graft materials, cell cultures and the like. Therefore, the present invention provides an industrially convenient and safe preparation method, thereby instilling a good image to a customer by greatly improving the quality and confidence in the products.

Abstract: Chemical mechanical polishing (CMP) devices, a pad conditioner assembly and a polishing pad conditioning method thereof are provided. The CMP device planarizes a wafer by rotating a carrier, which has a wafer mounted on a lower surface of the carrier, over a rotating polishing table while supplying a slurry onto a polishing pad attached to an upper surface of the rotating polishing table. The CMP device may include a pad conditioner assembly that conditions the polishing pad by supplying a pad conditioning liquid onto the polishing pad and simultaneously transferring a megasonic vibration to the pad conditioning liquid to remove foreign substances from a surface of the polishing pad.

Abstract: Methods are provided for fabricating a semiconductor device that include the steps of: sequentially forming a metal interconnection and a protecting layer on a semiconductor substrate; forming a contact hole on the protecting layer; isolating the contact hole by forming a molding layer and an etching stop layer stacked thereon; forming a sacrificial layer on the etching stop layer so as to fill the contact hole; forming a photoresist layer with an opening so as to expose the sacrificial layer and such that the opening of the photoresist layer aligns with the contact hole; forming a trench in the molding layer to penetrate the sacrificial layer and the etching stop layer; and performing a wet etching on the semiconductor substrate having the trench to remove the photoresist layer and the sacrificial layer, wherein the wet etching step is performed using an organic compound and fluoride ion-based buffered solution.

Abstract: Chemical mechanical polishing (CMP) devices, a pad conditioner assembly and a polishing pad conditioning method thereof are provided. The CMP device planarizes a wafer by rotating a carrier, which has a wafer mounted on a lower surface of the carrier, over a rotating polishing table while supplying a slurry onto a polishing pad attached to an upper surface of the rotating polishing table. The CMP device may include a pad conditioner assembly that conditions the polishing pad by supplying a pad conditioning liquid onto the polishing pad and simultaneously transferring a megasonic vibration to the pad conditioning liquid to remove foreign substances from a surface of the polishing pad.

Abstract: Methods are provided for fabricating a semiconductor device that include the steps of: sequentially forming a metal interconnection and a protecting layer on a semiconductor substrate; forming a contact hole on the protecting layer; isolating the contact hole by forming a molding layer and an etching stop layer stacked thereon; forming a sacrificial layer on the etching stop layer so as to fill the contact hole; forming a photoresist layer with an opening so as to expose the sacrificial layer and such that the opening of the photoresist layer aligns with the contact hole; forming a trench in the molding layer to penetrate the sacrificial layer and the etching stop layer; and performing a wet etching on the semiconductor substrate having the trench to remove the photoresist layer and the sacrificial layer, wherein the wet etching step is performed using an organic compound and fluoride ion-based buffered solution.