Abstract: A device includes first and second gate structures respectively extending across the first and second fins, and a gate isolation plug between a longitudinal end of the first gate structure and a longitudinal end of the second gate structure. The gate isolation plug comprises a first dielectric layer and a second dielectric layer over the first dielectric layer. The first dielectric layer has an upper portion and a lower portion below the upper portion. The upper portion has a thickness smaller than a thickness of the lower portion of the first dielectric layer.

Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.

Abstract: The present disclosure provides an extreme ultraviolet (EUV) lithography system including a radiation source and an EUV control system integrated with the radiation source. The EUV control system includes a 3-dimensional diagnostic module (3DDM) designed to collect a laser beam profile of a laser beam from the radiation source in a 3-dimensional (3D) mode, an analysis module designed to analyze the laser beam profile, a database designed to store the laser beam profile, and an EUV control module designed to adjust the radiation source. The analysis module is coupled with the database and the EUV control module. The database is coupled with the 3DDM and the analysis module. The EUV control module is coupled with the analysis module and the radiation source.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: A radiation structure without a light guiding board for a backlight module or an illuminant device includes an optical plate formed with at least one rising area having a rising surface defined at the center thereof, two light sources disposed adjacent to two sides of the optical plate, and a diffusion plate. The light sources each possess a radiant half-intensity angle below 15 degrees for respectively forming optic axial directions thereof, allowing a radiation field to be diffusively formed from the pivoting of the optic axial directions. Whereby, the optic axial directions respectively face toward the rising surface, allowing the projection of the radiation field on the rising surface, and the diffusion plate is disposed above the rising area of the optical plate. Therefore, an even radiating surface caused by a diffusion of the light sources from the diffusion plate could be preferably obtained even if no light guiding board is applied.

Abstract: A radiation structure without a light guiding board for a backlight module or an illuminant device includes an optical plate formed with at least one rising area having a rising surface defined at the center thereof, two light sources disposed adjacent to two sides of the optical plate, and a diffusion plate. The light sources each possess a radiant half-intensity angle below 15 degrees for respectively forming optic axial directions thereof, allowing a radiation field to be diffusively formed from the pivoting of the optic axial directions. Whereby, the optic axial directions respectively face toward the rising surface, allowing the projection of the radiation field on the rising surface, and the diffusion plate is disposed above the rising area of the optical plate. Therefore, an even radiating surface caused by a diffusion of the light sources from the diffusion plate could be preferably obtained even if no light guiding board is applied.