Abstract: A method for removing a resist layer including the following steps is provided. A patterned resist layer on a material layer is formed. A stripping solution is applied to the patterned resist layer to dissolve the patterned resist layer without dissolving the material layer, wherein the stripping solution comprises a non-dimethyl sulfoxide solvent and an alkaline compound, the non-dimethyl sulfoxide solvent comprises an aprotic solvent and a protic solvent.

Abstract: A welded member includes: a first steel sheet including a base steel sheet and a zinc-based plating layer formed on a surface of the base steel sheet; and a second steel sheet spot-welded on the first steel sheet and facing the zinc-based plating layer of the first steel sheet, a spot-welded zone being formed between the first steel sheet and the second steel sheet. A surface layer of the base steel sheet has a decarburization ratio of 30% or more. The decarburization ratio is represented by equation: Decarburization ratio (%) of surface layer=(1?average carbon concentration in surface layer/bulk carbon concentration)*100 where the surface layer refers to a region of the base steel sheet from the surface thereof to a depth of 35 ?m. A shoulder portion of the spot-welded zone includes a B-type crack having a length of 100 ?m or less, and no C-type crack.

Abstract: An aluminum alloy-plated steel sheet having excellent workability and corrosion resistance and a method for manufacturing the same are disclosed. The aluminum alloy-plated steel sheet includes a base sheet, and an alloy-plated layer formed on the base sheet. Interfacial roughness between the alloy-plated layer and the base steel sheet is 25 ?m or less. Such an aluminum alloy-plated steel sheet prevents microcracks generated during hot forming and has excellent seizure resistance and corrosion resistance. A method for manufacturing such an aluminum alloy-plated steel is also disclosed.

Abstract: A package structure includes an integrated circuit die and an encapsulant laterally encapsulating the integrated circuit die. The integrated circuit die includes a semiconductor substrate, an interconnection structure, a testing pad, a dummy post, a conductive post, and a protection layer. The interconnection structure is disposed on the semiconductor substrate. The testing pad is disposed on the interconnection structure. The dummy post is disposed on the testing pad. The conductive post is aside the dummy post. The protection layer is disposed between the conductive post and the dummy post.

Abstract: A method for removing a resist layer including the following steps is provided. A patterned resist layer on a material layer is formed. A stripping solution is applied to the patterned resist layer to dissolve the patterned resist layer without dissolving the material layer, wherein the stripping solution comprises a non-dimethyl sulfoxide solvent and an alkaline compound, the non-dimethyl sulfoxide solvent comprises an aprotic solvent and a protic solvent.

Abstract: Semiconductor devices and methods of manufacturing are provided. In some embodiments the method includes depositing an etch stop layer over a first hard mask material, the first hard mask material over a gate stack, depositing an interlayer dielectric over the etch stop layer, forming a first opening through the interlayer dielectric, the etch stop layer, and the first hard mask material, the first opening exposing a conductive portion of the gate stack, and treating sidewalls of the first opening with a first dopant to form a first treated region within the interlayer dielectric, a second treated region within the etch stop layer, a third treated region within the first hard mask material, and a fourth treated region within the conductive portion, wherein after the treating the fourth treated region has a higher concentration of the first dopant than the first treated region.

Abstract: An aluminum alloy-plated steel sheet having excellent workability and corrosion resistance and a method for manufacturing the same are disclosed. The aluminum alloy-plated steel sheet that includes a base sheet, and an alloy-plated layer formed on the base sheet. Interfacial roughness between the alloy-plated layer and the base steel sheet is 25. ?m or less. Such an aluminum alloy-plated steel sheet prevents microcracks generated during hot forming and has excellent seizure resistance and corrosion resistance. A method for manufacturing such an aluminum alloy-plated steel is also disclosed.

Abstract: A barrier layer is formed in a portion of a thickness of sidewalls in a recess prior to formation of an interconnect structure in the recess. The barrier layer is formed in the portion of the thickness of the sidewalls by a plasma-based deposition operation, in which a precursor reacts with a silicon-rich surface to form the barrier layer. The barrier layer is formed in the portion of the thickness of the sidewalls in that the precursor consumes a portion of the silicon-rich surface of the sidewalls as a result of the plasma treatment. This enables the barrier layer to be formed in a manner in which the cross-sectional width reduction in the recess from the barrier layer is minimized while enabling the barrier layer to be used to promote adhesion in the recess.

Abstract: An integrated circuit includes a semiconductor substrate, contact pads, testing pads, conductive posts, dummy posts, and a protection layer. The contact pads and the testing pads are distributed over the semiconductor substrate. The conductive posts are disposed on the contact pads. The dummy posts are disposed on the testing pads and are electrically floating. The protection layer covers the conductive posts and the dummy posts. A distance between top surfaces of the conductive posts and a top surface of the protection layer is smaller than a distance between top surfaces of the dummy posts and the top surface of the protection layer.

Abstract: Provided is a package structure including a first die and an encapsulant. The first die includes a substrate, a plurality of pads over the substrate, a passivation layer on portions of each of the plurality of pads, a plurality of first die connectors on the plurality of pads, respectively and a dielectric layer laterally encapsulating the plurality of first die connectors. The encapsulant laterally encapsulates the first die. One of the plurality of first die connectors is a taper-shaped die connector. A width of the one of the plurality of first die connectors gradually increases from a top surface of the one of the plurality of first die connectors toward the a top surface of the passivation layer.

Abstract: A welded member includes: a first steel sheet including a base steel sheet and a zinc-based plating layer formed on a surface of the base steel sheet; and a second steel sheet spot-welded on the first steel sheet and facing the zinc-based plating layer of the first steel sheet, a spot-welded zone being formed between the first steel sheet and the second steel sheet. A surface layer of the base steel sheet has a decarburization ratio of 30% or more. The decarburization ratio is represented by equation: Decarburization ratio (%) of surface layer=(1?average carbon concentration in surface layer/bulk carbon concentration)*100 where the surface layer refers to a region of the base steel sheet from the surface thereof to a depth of 35 ?m. A shoulder portion of the spot-welded zone includes a B-type crack having a length of 100 ?m or less, and no C-type crack.

Abstract: A conductive structure, includes: a plurality of conductive layers; a plurality of conductive pillars being formed on the plurality of conductive layers, respectively; and a molding compound laterally coating the plurality of conductive pillars. Each of the plurality of conductive pillars is a taper-shaped conductive pillar, and is tapered from the conductive layers.

Abstract: The present disclosure relates to an aluminum alloy-plated steel sheet having excellent workability and corrosion resistance and a method for manufacturing the same, and more particularly, to an aluminum alloy-plated steel sheet that prevents microcracks generated during hot forming and has excellent seizure resistance and corrosion resistance, and a method for manufacturing the same.

Abstract: The present disclosure relates to an aluminum alloy-plated steel sheet having excellent workability and corrosion resistance and a method for manufacturing the same, and more particularly, to an aluminum alloy-plated steel sheet preventing microcracks generated during hot forming and has excellent seizure resistance and corrosion resistance, and a method for manufacturing the same.

Abstract: An embodiment of the present invention provides a high strength hot-dip galvanized steel sheet having excellent plating adhesion and weldability and a method of manufacturing same, wherein: the steel sheet comprises a base steel sheet and a hot-dip galvanized layer formed on one surface or both surfaces of the base steel sheet, the base steel sheet comprising, in weight %, carbon (C): 0.1-0.3%, silicon (Si): 0.1-2.0%, aluminum (Al): 0.1-1.5%, manganese (Mn): 1.5-3.0%, and the balance being Fe and inevitable impurities, the sum of Si and Al satisfying 1.2-3.5%, the ratio (Al/Si) of Al and Si satisfying 0.5-2.0; the steel sheet comprises an internal oxidation layer with a thickness of 1-5 ?m directly below the surface of the base steel sheet; and the decarburization rate in a region from directly below the surface of the base steel sheet to 50 ?m is 50% or more.

Abstract: A planar type solid oxide fuel cell, and more particularly, a thin and light planar type solid oxide fuel cell omits a window frame and has a simplified a unit cell having a through hole through which fuel and air flow in/out a fuel electrode.

Abstract: An interconnect for a solid oxide fuel cell, its manufacturing method, and a solid oxide fuel cell including the same are provided.

Abstract: A semiconductor structure and method of forming a semiconductor structure are provided. In some embodiments, the method includes forming a gate structure over a substrate. An epitaxial source/drain region is formed adjacent to the gate structure. A dielectric layer is formed over the epitaxial source/drain region. An opening is formed, the opening extending through the dielectric layer and exposing the epitaxial source/drain region. Sidewalls of the opening are defined by the dielectric layer and a bottom of the opening is defined by the epitaxial source/drain region. A silicide layer is formed on the epitaxial source/drain region. A metal capping layer including tungsten, molybdenum, or a combination thereof is selectively formed on the silicide layer by a first deposition process. The opening is filled with a first conductive material in a bottom-up manner from the metal capping layer by a second deposition process different from the first deposition process.

Abstract: A method includes the following steps. A seed layer is formed over a structure having at least one semiconductor die. A first patterned photoresist layer is formed over the seed layer, wherein the first patterned photoresist layer includes a first opening exposing a portion of the seed layer. A metallic wiring is formed in the first opening and on the exposed portion of the seed layer. A second patterned photoresist layer is formed on the first patterned photoresist layer and covers the metallic wiring, wherein the second patterned photoresist layer includes a second opening exposing a portion of the metallic wiring. A conductive via is formed in the second opening and on the exposed portion of the metallic wiring. The first patterned photoresist layer and the second patterned photoresist layer are removed. The metallic wiring and the conductive via are laterally wrapped around with an encapsulant.

Abstract: A method for removing a resist layer including the following steps is provided. A patterned resist layer on a material layer is formed. A stripping solution is applied to the patterned resist layer to dissolve the patterned resist layer without dissolving the material layer, wherein the stripping solution comprises a non-dimethyl sulfoxide solvent and an alkaline compound, the non-dimethyl sulfoxide solvent comprises an aprotic solvent and a protic solvent.