Abstract: A method for etching a tungsten silicide (WSix) layer during formation of a gate electrode in an integrated circuit is disclosed. The method uses an etchant gas comprising nitrogen gas (N2) and oxygen gas (O2) in a specified flow ratio. The etchant gas may also comprise chlorine gas (Cl2) and tetrafluoromethane (CF4). The selectivity of the etchant gas containing O2 for WSix versus polysilicon is much higher, which reduces overetching and provides more control in methods for producing a gate electrode. A gate electrode produced by such a method is also disclosed.