Abstract: A semiconductor device includes a substrate; a memory array over the substrate, the memory array including first magnetic tunnel junctions (MTJs), where the first MTJs are in a first dielectric layer over the substrate; and a resistor circuit over the substrate, the resistor circuit including second MTJs, where the second MTJs are in the first dielectric layer.

Abstract: A device includes first and second gate structures respectively extending across the first and second fins, and a gate isolation plug between a longitudinal end of the first gate structure and a longitudinal end of the second gate structure. The gate isolation plug comprises a first dielectric layer and a second dielectric layer over the first dielectric layer. The first dielectric layer has an upper portion and a lower portion below the upper portion. The upper portion has a thickness smaller than a thickness of the lower portion of the first dielectric layer.

Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: An iridium complex is disclosed, which has a structure represented by the following formula (I): wherein each of Z1 and Z3 represents an atomic group for forming a nitrogen-containing heteroaryl group or a nitrogen-containing heterocycloalkenyl group; Z2 represents an atomic group for forming an aryl group, a heteroaryl group, a cycloalkenyl group or a heterocycloalkenyl group; Y represents an atomic group for forming a 5-membered nitrogen-containing heterocycloalkenyl group; each of R1, R2, R3 and R4 represents a hydrogen atom or a substituent; m is 1 or 2; a, b and d is 0 or any positive integer; and c is an integer of from 0 to 2.

Abstract: An iridium complex is disclosed, which has a structure represented by the following formula (I): wherein each of Z1 and Z3 represents an atomic group for forming a nitrogen-containing heteroaryl group or a nitrogen-containing heterocycloalkenyl group; Z2 represents an atomic group for forming an aryl group, a heteroaryl group, a cycloalkenyl group or a heterocycloalkenyl group; Y represents an atomic group for forming a 5-membered nitrogen-containing heterocycloalkenyl group; each of R1, R2, R3 and R4 represents a hydrogen atom or a substituent; m is 1 or 2; a, b and d is 0 or any positive integer; and c is an integer of from 0 to 2.

Abstract: An indium complex is disclosed, which has a structure represented by the following formula (I): wherein each of Z1 and Z3 represents an atomic group for forming a nitrogen-containing heteroaryl group or a nitrogen-containing heterocycloalkenyl group; Z2 represents an atomic group for forming an aryl group, a heteroaryl group, a cycloalkenyl group or a heterocycloalkenyl group; Y represents an atomic group for forming a 5-membered nitrogen-containing heterocycloalkenyl group; each of R1, R2, R3 and R4 represents a hydrogen atom or a substituent; m is 1 or 2; a, b and d is 0 or any positive integer; and c is an integer of from 0 to 2.