Abstract: A memory device includes a substrate, a first transistor, a second transistor, and a capacitor. The first transistor is over the substrate and includes a select gate. The second transistor is over the substrate and connected to the first transistor in series, in which the second transistor includes a floating gate. The capacitor is over the substrate and connected to the second transistor, wherein the capacitor includes a top electrode, a bottom electrode in the substrate, and an insulating layer between the top electrode and the bottom electrode. The insulating layer includes nitrogen. A nitrogen concentration of the insulating layer increases in a direction from the top electrode to the bottom electrode.

Abstract: A memory device includes a substrate, a first transistor, a second transistor, and a capacitor. The first transistor is over the substrate and includes a select gate. The second transistor is over the substrate and connected to the first transistor in series, in which the second transistor includes a floating gate. The capacitor is over the substrate and connected to the second transistor, wherein the capacitor includes a top electrode, a bottom electrode in the substrate, and an insulating layer between the top electrode and the bottom electrode. The insulating layer includes nitrogen. A nitrogen concentration of the insulating layer increases in a direction from the top electrode to the bottom electrode.

Abstract: In some embodiments, the present disclosure relates to an integrated chip (IC), including a substrate, a floating gate electrode disposed over the substrate, a contact etch stop layer (CESL) structure disposed over the floating gate electrode, an insulating stack separating the floating gate electrode from the CESL structure, the insulating stack including a first resist protective layer disposed over the floating gate electrode, a second resist protective layer disposed over the first resist protective layer, and an insulating layer separating the first resist protective layer from the second resist protective layer.

Abstract: A memory device includes a substrate, a first transistor, a second transistor, and a capacitor. The first transistor is over the substrate and includes a select gate. The second transistor is over the substrate and connected to the first transistor in series, in which the second transistor includes a floating gate. The capacitor is over the substrate and connected to the second transistor, wherein the capacitor includes a top electrode, a bottom electrode in the substrate, and an insulating layer between the top electrode and the bottom electrode. The insulating layer includes nitrogen. A nitrogen concentration of the insulating layer increases in a direction from the top electrode to the bottom electrode.

Abstract: A method for adjusting touch sensitivity is disclosed. The method comprises steps of enabling an audio-collecting device to receive one or more original audio data; determining whether an audio parameter of at least one of the one or more original audio data matches at least one pre-stored audio parameter; and adjusting a touch sensitivity of a touch input interface to one of a plurality of pre-stored touch sensitivity in response to the audio parameter of the at least one original audio data matching the at least one pre-stored audio parameter, wherein the pre-stored touch sensitivity corresponds to the at least one pre-stored audio parameter.

Abstract: A cultivating box comprises a micro control unit (MCU), a memory module, a light adjusting module and a container having a cultivating space for cultivating plants is presented. The memory module records a plurality of parameters respectively corresponding to different growth conditions needed by the plants in different growth stages. The MCU applies corresponding parameters of the plurality of parameters recorded in the memory module to control the light adjusting module in each growth stage of the plants for adjusting the light status of the container, so the environment of the container can satisfy the requirement of the plant in every growth stage.