Abstract: Silicon carbide junction barrier Schottky diode disclosed. Silicon carbide junction barrier Schottky diode includes a first conductivity-type substrate, a first conductivity-type epitaxial layer, being formed by epitaxial growth of silicon carbide doped with a first conductivity-type impurity on the first conductivity-type substrate, a charge injection region, being formed on the first conductivity-type epitaxial layer and doped at a concentration of the first conductivity-type impurity higher than that of the first conductivity-type epitaxial layer, a second conductivity-type junction region, being formed on the first conductivity-type epitaxial layer so as to contact the charge injection region, a Schottky metal layer, being formed on the charge injection region and the second conductivity-type junction region, an anode electrode, being formed on the Schottky metal layer, and a cathode electrode, being formed under the first conductivity-type substrate.

Abstract: An embodiment of the present invention provides a large-area heater. The large-area heater comprises: a heating plate including a central area in which heat is concentrated and a peripheral area surrounding the central area; and a plurality of unit heaters for heating at least a part of the central area and at least a part of the peripheral area, wherein each of the plurality of unit heaters comprises: a plurality of heat emitting areas producing different amounts of heat; a plurality of power wires for independently transmitting power to the plurality of heating areas, respectively; and pairs of power terminals which are arranged at the corner of each of the unit heaters so as to supply power to the plurality of power wires, the number of pairs of power terminals corresponding to the number of the plurality of heat emitting areas.

Abstract: Schottky diode and method for fabricating the same disclosed. The Schottky diode includes a gallium oxide layer that is a semiconductor layer doped with a first-type dopant, a cathode in ohmic contact with the gallium oxide layer and an anode having a Schottky contact metal layer in Schottky contact with the gallium oxide layer. The gallium oxide layer is in contact with an interface with the Schottky contact metal layer, contains a second-type dopant of a conductivity opposite to that of the first-type dopant, and has an interlayer which is a region where a concentration of the second-type dopant decreases as it moves away from an interface with the Schottky contact metal layer.