Abstract: A method for adjusting a channel length of silicon carbide MOSFET includes depositing a buffer layer and a poly-silicon layer on a first conductivity type epitaxial layer having a plurality of second conductivity type bases, etching the poly-silicon layer to form a poly-silicon pattern, depositing a spacer layer on the poly-silicon pattern and exposed buffer layer to a first deposition thickness, forming a first width of spacers of the poly-silicon pattern by dry etching the spacer layer, forming a pair of first conductivity type source regions on the second conductivity type bases by ion implantation into a first pattern mask formed on the buffer layer, forming a second conductivity type source region on the second conductivity type bases by implanting ions into a second pattern mask, and forming a gate electrode on a first channel extending from the first conductivity type source region to the first conductivity type epitaxial layer.

Abstract: A side chain liquid crystal polymer and a manufacturing method therefor are provided. Also, an optical recording medium of which recording layer is made of the side chain liquid crystal of the present invention is provided. The side chain liquid crystal polymer expressed by the following formula (V) has excellent processing properties due to its high solubility. Also, due to its high glass transition temperature and low polydispersity, information recorded on a recording layer made of the polymer can be preserved for a long time. In addition, since the recorded type (pit) is even, the error rate is low and the occurrence of jitter noise can be remarkably reduced: ##STR1## where A is either CH.sub.2 or CH.sub.2 --O--(CH.sub.2).sub.m, R is either OCH.sub.3, CN or NO.sub.2, l is 10 to 100, m is 1 to 6, and n is to 20.