Abstract: In general, according to one embodiment, a magnetoresistance memory device includes: a first conductor; a second conductor on the first conductor; a first element on the second conductor; a third conductor on the first element; and a first layer stack on the third conductor. The second conductor is amorphous. The first element includes a silicon oxide introduced with a dopant. The first layer stack includes a first magnetic layer, a second magnetic layer, and a first insulating layer between the first magnetic layer and the second magnetic layer.

Abstract: In a suspended industrial robot, a base and a swivel section have an internal space into which a cable can be inserted. The base has an insertion opening through which at least the cable can be passed into the internal space from the outside. A first cable holding part that holds the cable is installed on at least one of a first arm and a second arm. The cable passes through the internal space of the base and the swivel section and is routed up to an end effector with a midway portion of the cable being held by the first cable holding part.

Abstract: According to one embodiment, a magnetic memory device includes: a first interconnect; a second interconnect; a first switching element provided on the first interconnect; a second switching element provided on the second interconnect; a first insulating layer provided surrounding the first switching element; a second insulating layer surrounding the second switching element and not being in contact with the first insulating layer; a first conductor provided on the first switching element and the first insulating layer; a second conductor provided on the second switching element and the second insulating layer; a first magnetoresistive effect element provided on the first conductor; and a second magnetoresistive effect element provided on the second conductor.

Abstract: According to one embodiment, a memory device includes: a first memory cell; a second memory cell; a first circuit configured to supply a write current to the first memory cell and the second memory cell; a first wiring coupled to the first circuit; a first electrode configured to electrically couple the first memory cell to the first wiring; and a second electrode configured to electrically couple the second memory cell to the first wiring. A length of the first wiring from the first circuit to the first electrode is smaller than a length of the first wiring from the first circuit to the second electrode. A resistance value of the first electrode is higher than a second resistance value of the second electrode.

Abstract: According to one embodiment, a switching element includes a first electrode, a second electrode, and a switching material layer provided between the first electrode and the second electrode. The switching material layer contains silicon (Si), oxygen (O), arsenic (As), and a predetermined element selected from lead (Pb), silver (Ag), indium (In), tin (Sn), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), selenium (Se), antimony (Sb), tellurium (Te), gold (Au) and bismuth (Bi).

Abstract: According to one embodiment, a memory device includes a memory cell including a magnetoresistive effect element. The magnetoresistive effect element includes a non-magnetic layer between first and second electrodes in the first direction, a first magnetic layer between the first electrode and the non-magnetic layer, a second magnetic layer between the second electrode and the non-magnetic layer, and a first layer between the second electrode and the second magnetic layer. The first layer includes oxygen and at least one selected from magnesium, transition metal, and lanthanoid, the first layer has a first size in the first direction, the non-magnetic layer has a second size in the first direction. The first size is 1.1 times or more and 2 times or less the second size.

Abstract: According to one embodiment, a memory device includes: a switching element including first and second conductive layers, and a variable resistive layer between the first and second conductive layers. The first or second conductive layers includes a first layer, a second layer between the first layer and the variable resistive layer, and a third layer between the first layer and the second layer. Each of the first and second layers is selected from a layer including carbon, a layer including nitrogen and carbon, a layer including nitrogen and titanium, a layer including nitrogen and tantalum, a layer including tungsten, a layer including nitrogen and tungsten, and a layer including platinum. The third layer includes at least one selected from lithium, sodium, magnesium, calcium, titanium, or lanthanum.

Abstract: A magnetoresistance memory device includes a first conductor, a first insulator covering a side surface of the first conductor, a second conductor on the first conductor that are substantially made of a non-magnetic non-nitrogen material. The device includes a variable resistance material, a third conductor, a first ferromagnetic layer, an insulating layer, and a second ferromagnetic layer. The third conductor, a fourth conductor on the second ferromagnetic layer, and a second insulator covering side surfaces of the first and second ferromagnetic layers and insulating layer are substantially made of a non-nitrogen material. A third insulator is on the second insulator.

Abstract: A magnetoresistive memory device according to one embodiment includes: first and second layer stacks, each of which includes: a first ferromagnetic layer having a magnetization directed in a first direction; a non-magnetic first conductive layer above the first ferromagnetic layer, a second ferromagnetic layer provided above the first conductive layer and having a magnetization directed in a second direction different from the first direction, a first insulating layer on an upper surface of the second ferromagnetic layer, and a third ferromagnetic layer above the first insulating layer. The second ferromagnetic layer of the second layer stack is thicker than the second ferromagnetic layer of the first layer stack.

Abstract: In a suspended industrial robot, a base and a swivel section have an internal space into which a cable can be inserted. The base has an insertion opening through which at least the cable can be passed into the internal space from the outside. A first cable holding part that holds the cable is installed on at least one of a first arm and a second arm. The cable passes through the internal space of the base and the swivel section and is routed up to an end effector with a midway portion of the cable being held by the first cable holding part.

Abstract: Provided is an articulated welding robot that includes an articulated arm in which a plurality of arm parts are linked via a drive shaft. A welding wire is disposed along the articulated arm. In at least one of the arm parts a depression is formed that forms a hollow on the inner side of the arm. At least a portion of the welding wire is accommodated in the depression.

Abstract: According to one embodiment, a memory device includes a first wiring extending in a first direction, and a second wiring extending in a second direction that intersects the first direction. A memory cell is between the first wiring and the second wiring and includes a resistive memory element and a switching element that are connected in series between the first wiring and the second wiring. An insulating region surrounds side surfaces of the memory cell. The insulating region includes a first insulating part adjacent to a side surface of the resistive memory element and a second insulating part adjacent to a side surface of the switching element. The second insulating part has a higher thermal conductivity than the first insulating part.

Abstract: In general, according to one embodiment, a magnetoresistance memory device includes: a first conductor; a second conductor on the first conductor; a first element on the second conductor; a third conductor on the first element; and a first layer stack on the third conductor. The second conductor is amorphous. The first element includes a silicon oxide introduced with a dopant. The first layer stack includes a first magnetic layer, a second magnetic layer, and a first insulating layer between the first magnetic layer and the second magnetic layer.

Abstract: Provided is a multi-jointed welding robot that includes: a rotating part that is rotatably provided on a base that is fixed to an installation surface; and a multi-jointed arm that is coupled to the rotating part via a first driving shaft and has a plurality of arm parts. An opening is formed in the rotating part through which a routing member, which is routed inside the rotating part, is guided from part of the rotating part toward the side opposite the installation surface. A guide member guides the routing member, which has one end fixed to the opening and which is guided through the opening, toward the installation surface from the other end of the routing member while bending the routing member.

Abstract: A harness connection structure has a first arm; a second arm which has a base side that is rotatably coupled to the first arm via an arm joint; and a harness that extends from a leading end of the first arm and is guided into an arm interior at the arm joint. The leading end of the first arm has a harness holding part that holds one longitudinal side of the harness. The arm joint has a harness fixing part that fixes the other longitudinal side of the harness inside the arm joint. The harness fixing part is disposed such that the harness is inclined from the longitudinal axis of the second arm toward the leading end of the first arm.

Abstract: According to one embodiment, a magnetic storage device includes: a magnetoresistive effect element including a non-magnet, and a stacked structure on the non-magnet, the stacked structure including: a first ferromagnet on the non-magnet; an anti-ferromagnet being exchange-coupled with the first ferromagnet; and a second ferromagnet between the first ferromagnet and the anti-ferromagnet. The stacked structure is configured to: have a first resistance value in response to a first current flowing through the stacked structure in a first direction, and have a second resistance value different from the first resistance value in response to a second current flowing through the stacked structure in a second direction opposite to the first direction.

Abstract: According to one embodiment, a memory device includes a first wiring extending in a first direction, and a second wiring extending in a second direction that intersects the first direction. A memory cell is between the first wiring and the second wiring and includes a resistive memory element and a switching element that are connected in series between the first wiring and the second wiring. An insulating region surrounds side surfaces of the memory cell. The insulating region includes a first insulating part adjacent to a side surface of the resistive memory element and a second insulating part adjacent to a side surface of the switching element. The second insulating part has a higher thermal conductivity than the first insulating part.

Abstract: According to one embodiment, a storage device includes a magnetoresistive effect element comprising a nonmagnetic layer and a stacked body on the nonmagnetic layer. The stacked body includes a first ferromagnetic layer on the nonmagnetic layer, a second ferromagnetic layer exchange-coupled with the first ferromagnetic layer, and a magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. The magnetic layer includes a magnetic material and at least one compound selected from among a carbide, a nitride, and a boride.

Abstract: A magnetoresistive memory device according to one embodiment includes: first and second layer stacks, each of which includes: a first ferromagnetic layer having a magnetization directed in a first direction; a non-magnetic first conductive layer above the first ferromagnetic layer, a second ferromagnetic layer provided above the first conductive layer and having a magnetization directed in a second direction different from the first direction, a first insulating layer on an upper surface of the second ferromagnetic layer, and a third ferromagnetic layer above the first insulating layer. The second ferromagnetic layer of the second layer stack is thicker than the second ferromagnetic layer of the first layer stack.

Abstract: A mechanical stopper device wherein a fixed body includes a fixing-side stopper, including: a lever that can swing about a supporting shaft provided to the fixed body; and a pair of elastic bodies, attached to the fixed body, on both sides in the lever swinging direction, and which can contact with both side surfaces of the lever. Further, a rotating body includes a stopper pin that can be in contact with both the side surfaces of the lever. The ratio between a distance (a) from a supporting point of the lever to a contact position where the lever and the stopper pin are in contact with each other, and a distance (b) from the supporting point of the lever to a contact position where the lever and the elastic bodies are in contact with each other is 1.05?a/b?2.30, and thickness (D) of the elastic bodies is 20 mm?D?40 mm.