Abstract: A method of forming a metal-containing nitride film containing silicon includes: supplying a metal-containing gas into a processing container in which a substrate is accommodated; supplying a silicon-containing gas into the processing container; and supplying a nitrogen-containing gas into the processing container, wherein a series of processes, in which the supplying the metal-containing gas and the supplying the silicon-containing gas are executed n times in this order (where n is an integer of one or more) and then the supplying the nitrogen-containing gas is executed, is repeated m times in this order (where m is an integer of one or more).

Abstract: A film forming method includes: providing the substrate into the processing container; forming a metal-based film on the substrate within the processing container; and subsequently, supplying a Si-containing gas into the processing container in a state in which the substrate is provided within the processing container.

Abstract: A film forming method includes forming a film by sequentially performing operations for each of a plurality of kinds of reaction gases, the operations being of storing the reaction gas in a storage part to raise a pressure in the storage part to a first pressure and then discharging the reaction gas into the process vessel, while continuously supplying the counter gas, and purging by repeating multiple times operations of storing a purge gas in the storage part provided in the reaction gas supply passage to raise the pressure in the storage part to a second pressure higher than the first pressure, and discharging the purge gas into the process vessel. A flow rate of the counter gas supplied into the process vessel in the purging is smaller than a flow rate of the counter gas supplied into the process vessel in the forming the film.

Abstract: A method of forming a metal-containing nitride film containing silicon includes: supplying a metal-containing gas into a processing container in which a substrate is accommodated; supplying a silicon-containing gas into the processing container; and supplying a nitrogen-containing gas into the processing container, wherein a series of processes, in which the supplying the metal-containing gas and the supplying the silicon-containing gas are executed n times in this order (where n is an integer of one or more) and then the supplying the nitrogen-containing gas is executed, is repeated m times in this order (where m is an integer of one or more).

Abstract: A film forming method includes forming a film by sequentially performing operations for each of a plurality of kinds of reaction gases, the operations being of storing the reaction gas in a storage part to raise a pressure in the storage part to a first pressure and then discharging the reaction gas into the process vessel, while continuously supplying the counter gas, and purging by repeating multiple times operations of storing a purge gas in the storage part provided in the reaction gas supply passage to raise the pressure in the storage part to a second pressure higher than the first pressure, and discharging the purge gas into the process vessel. A flow rate of the counter gas supplied into the process vessel in the purging is smaller than a flow rate of the counter gas supplied into the process vessel in the forming the film.

Abstract: A microwave heat treatment apparatus includes: a processing vessel configured to accommodate a substrate therein; a support member configured to rotatably support the substrate in the processing vessel; a microwave introduction device configured to generate a microwave for processing the substrate and introduce the microwave into the processing vessel; a first cooling gas introduction part installed to face a main surface of the substrate supported by the support member, the main surface being a target to be processed; a second cooling gas introduction part installed in a lateral side of the substrate supported by the support member; and a control unit configured to independently control the introduction of a cooling gas from the first cooling gas introduction part and the introduction of the cooling gas from the second cooling gas introduction part.

Abstract: There is provided a substrate mounting method of bringing a substrate close to a mounting table to mount the substrate on the mounting table by reducing a protrusion amount of a plurality of projections configured to protrude from a substrate-mounting surface of the mounting table and to support the substrate, the protrusion amount being defined to protrude from the substrate-mounting surface. The method includes: after at least a portion of the substrate is brought into contact with the substrate-mounting surface, halting an operation of bringing the substrate close to the mounting table; and after the halting the operation of bringing the substrate close to the mounting table, resuming the operation of bringing the substrate close to the mounting table.

Abstract: There is provided a substrate mounting method of brining a substrate close to a mounting table to mount the substrate on the mounting table by reducing a protrusion amount of a plurality of projections configured to protrude from a substrate-mounting surface of the mounting table and to support the substrate, the protrusion amount being defined to protrude from the substrate-mounting surface. The method includes: after at least a portion of the substrate is brought into contact with the substrate-mounting surface, halting an operation of bringing the substrate close to the mounting table; and after the halting the operation of bringing the substrate close to the mounting table, resuming the operation of bringing the substrate close to the mounting table.

Abstract: A microwave heat treatment apparatus includes: a processing vessel configured to accommodate a substrate therein; a support member configured to rotatably support the substrate in the processing vessel; a microwave introduction device configured to generate a microwave for processing the substrate and introduce the microwave into the processing vessel; a first cooling gas introduction part installed to face a main surface of the substrate supported by the support member, the main surface being a target to be processed; a second cooling gas introduction part installed in a lateral side of the substrate supported by the support member; and a control unit configured to independently control the introduction of a cooling gas from the first cooling gas introduction part and the introduction of the cooling gas from the second cooling gas introduction part.

Abstract: A microwave heating apparatus includes a processing chamber for accommodating a target, a support device for supporting the target in the processing chamber and a microwave introducing device for generating microwaves to introduce them into the processing chamber. The processing chamber further includes a top wall having a plurality of microwave introduction ports to introduce the microwaves generated in the microwave introducing device into the processing chamber. Each of the microwave introduction ports has a rectangular shape having long sides and short sides parallel to inner wall surfaces of four sidewalls of the processing chamber, and the support device includes a support member to support the target and a rotating mechanism for rotating the supported target.

Abstract: A microwave heating apparatus includes a phase control unit configured to change a phase of a standing wave of microwave introduced into the process chamber by the microwave introduction unit. The phase control unit includes a recessed portion with respect to an inner surface of the bottom wall. The phase control unit is formed of a bottom portion and a fixing plate installed at a lower surface of the bottom portion from the outer side of the process chamber. The phase of the standing wave in the process chamber is changed by the incidence and reflection of the microwave in the recessed portion of the phase control unit surrounded by metallic wall.

Abstract: There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusion 60 is formed at an inner peripheral surface of a cover member 27. The extended protrusion 60 is formed toward a plasma generation space S and serves as a facing electrode facing an electrode 7 within a mounting table 5 with the plasma generation space S therebetween. A ratio of a surface area of the facing electrode with respect to that of an electrode for bias (facing electrode surface area/bias electrode area) is in a range of from about 1 to about 5.

Abstract: The present disclosure relates to a heat treatment method of performing a single crystallization of amorphous silicon formed on a substrate to be processed by irradiating the substrate with a microwave. The heat treatment method includes: irradiating the substrate with a microwave to increase a temperature of the substrate to a first temperature such that the amorphous silicon formed on the substrate becomes a single crystal at an interface between the substrate and the amorphous silicon and a nucleation does not occur in a region except the interface; irradiating the substrate with a microwave to heat the substrate at the first temperature for a predetermined period; irradiating the substrate with the microwave to increase the first temperature to a second temperature, which is higher than the first temperature; and irradiating the substrate with the microwave to heat the substrate at the second temperature.

Abstract: A microwave processing method for processing an object in a processing chamber is probided by using microwaves. The method includes loading the object into the processing chamber in a state where a pressure in the processing chamber is higher than that of an outside environment; discharging O2 gas from the processing chamber by introducing N2 gas into the processing chamber; performing heat treatment on the object by introducing microwaves into the processing chamber from which the O2 gas has been discharged; and cooling the object in a state where the pressure in the chamber is higher than that of the outside environment.

Abstract: A method for cleaning a microwave processing apparatus including a processing chamber for accommodating therein an object to be processed, a microwave introducing unit for introducing microwaves into the chamber, and a gas introducing unit for introducing a gas into the processing chamber is provided. The method includes loading an object for cleaning into the processing chamber, introducing a gas into the processing chamber, introducing microwaves into the processing chamber, and unloading the object from the processing chamber.

Abstract: In a method for processing an object by heating the object, microwaves are irradiated to the object. In the microwave irradiation, the object is forcedly cooled.

Abstract: A selective plasma nitriding method includes mounting an object to be processed on a mounting table in a processing chamber of a plasma processing apparatus, the object having a silicon surface and a silicon compound layer exposed; setting a pressure in the processing chamber within the range of about 66.7 Pa to 667 Pa; and generating a nitrogen-containing plasma while applying a bias voltage to the object by supplying to the mounting table a high frequency power with an output of about 0.1 W/cm2 to 1.2 W/cm2 per unit area of the object. The plasma nitriding method further includes selectively nitriding the silicon surface by the nitrogen-containing plasma to form a silicon nitride film.

Abstract: There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusion 60 is formed at an inner peripheral surface of a cover member 27. The extended protrusion 60 is formed toward a plasma generation space S and serves as a facing electrode facing an electrode 7 within a mounting table 5 with the plasma generation space S therebetween. A ratio of a surface area of the facing electrode with respect to that of an electrode for bias (facing electrode surface area/bias electrode area) is in a range of from about 1 to about 5.