Patents by Inventor Taichiro Konno
Taichiro Konno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11908902Abstract: Provided is a group III nitride laminate for improving device characteristics, including: an underlying substrate; a first layer that is formed on the underlying substrate and is made of aluminum nitride; and a second layer that is formed on the first layer and is made of gallium nitride, wherein the first layer has a thickness of more than 100 nm and 1 ?m or less, a full width at half maximum of (0002) diffraction determined through X-ray rocking curve analysis is 250 seconds or less, and a full width at half maximum of (10-12) diffraction determined through X-ray rocking curve analysis is 500 seconds or less.Type: GrantFiled: July 7, 2021Date of Patent: February 20, 2024Assignee: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Hajime Fujikura, Taichiro Konno, Takeshi Kimura, Osamu Goto
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Publication number: 20230245885Abstract: There is provided a semiconductor laminate, comprising: a substrate; and a p-type layer provided above the substrate and comprising a group III nitride containing Mg, wherein C concentration in the p-type layer is less than 5 × 1015 cm-3, O concentration in the p-type layer is less than 5 × 1015 cm-3, Si concentration in the p-type layer is less than 1×1015 cm-3, and F concentration in the p-type layer is 1×1014 cm-3 or more.Type: ApplicationFiled: January 27, 2023Publication date: August 3, 2023Applicant: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Shota KANEKI, Hajime FUJIKURA, Taichiro KONNO, Takeshi KIMURA
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Patent number: 11631785Abstract: A group III-nitride laminated substrate includes a sapphire substrate, a first layer that is formed on the sapphire substrate and is made of aluminum nitride, a second layer that is formed on the first layer and serves as an n-type layer made of gallium nitride and doped with an n-type dopant, a third layer that is formed on the second layer and serves as a light-emitting layer made of a group III-nitride, and a fourth layer that is formed on the third layer and serves as a p-type layer made of a group III-nitride and doped with a p-type dopant. The second layer has a thickness of 7 ?m or less. A half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less.Type: GrantFiled: November 19, 2020Date of Patent: April 18, 2023Assignee: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Hajime Fujikura, Taichiro Konno, Takeshi Kimura
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Patent number: 11574809Abstract: There is provided a method for manufacturing a nitride semiconductor template constituted by forming a nitride semiconductor layer on a substrate, comprising: (a) forming a first layer by epitaxially growing a nitride semiconductor containing aluminum on the substrate; (b) applying annealing to the first layer in an inert gas atmosphere; and (c) forming a second layer by epitaxially growing a nitride semiconductor containing aluminum on the first layer by a vapor phase growth after performing (b), and constituting the nitride semiconductor layer by the first layer and the second layer.Type: GrantFiled: December 5, 2017Date of Patent: February 7, 2023Assignees: SUMITOMO CHEMICAL COMPANY, LIMITED, MIE UNIVERSITYInventors: Hajime Fujikura, Taichiro Konno, Hideto Miyake
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Patent number: 11522105Abstract: An object of the present disclosure is to provide a technique capable of attaining an AlN template which has less strain and is suitable for producing the ultraviolet LED. Provided is a nitride semiconductor laminate structure, including at least a sapphire substrate, a first AlN layer formed on a principal surface of the sapphire substrate, and a second AlN layer formed on the first AlN layer, wherein an absolute value of a strain amount ?2 of the second AlN layer in the a-axis direction is smaller than an absolute value of a strain amount ?1 of the first AlN layer in the a-axis direction.Type: GrantFiled: September 18, 2020Date of Patent: December 6, 2022Assignee: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Taichiro Konno, Takeshi Kimura, Hajime Fujikura
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Publication number: 20220259765Abstract: An object is to improve quality of a nitride crystal. A crystal represented by a composition formula InxAlyGa1?x?yN (satisfying 0?x?1, 0?y?1, and 0?x+y?1), wherein the concentration of carbon in the crystal is less than 1×1015 cm?3, and the concentration of an electron trap E3 that exits in an energy range from 0.5 eV to 0.65 eV from a lower end of a conduction band in the crystal is less than 1×1014 cm?3.Type: ApplicationFiled: February 14, 2022Publication date: August 18, 2022Applicants: SCIOCS COMPANY LIMITED, SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Hajime FUJIKURA, Takeshi KIMURA, Taichiro KONNO
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Patent number: 11339053Abstract: An object of the present invention is to improve quality of a nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal in which a composition formula is represented by InxAlyGa1-x-yN (satisfying 0?x?1, 0?y?1, 0?x+y?1), and the concentration of B in the crystal is less than 1×1015 at/cm3, and each of the concentrations of O and C in the crystal is less than 1×1015 at/cm3 in a region of 60% or more of a main surface.Type: GrantFiled: July 29, 2019Date of Patent: May 24, 2022Assignees: SCIOCS COMPANY LIMITED, SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Hajime Fujikura, Taichiro Konno, Takehiro Yoshida
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Publication number: 20220028981Abstract: Provided is a group III nitride laminate for improving device characteristics, including: an underlying substrate; a first layer that is formed on the underlying substrate and is made of aluminum nitride; and a second layer that is formed on the first layer and is made of gallium nitride, wherein the first layer has a thickness of more than 100 nm and 1 ?m or less, a full width at half maximum of (0002) diffraction determined through X-ray rocking curve analysis is 250 seconds or less, and a full width at half maximum of (10-12) diffraction determined through X-ray rocking curve analysis is 500 seconds or less.Type: ApplicationFiled: July 7, 2021Publication date: January 27, 2022Applicants: SCIOCS COMPANY LIMITED, SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Hajime FUJIKURA, Taichiro KONNO, Takeshi KIMURA, Osamu GOTO
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Patent number: 11075077Abstract: There is provided a method for manufacturing a nitride semiconductor template constituted by forming a nitride semiconductor layer on a substrate, comprising: (a) preparing a pattern-substrate as the substrate, with a concavo-convex pattern formed on a front surface of the pattern-substrate, (b) forming a first layer by epitaxially growing a nitride semiconductor containing aluminum on the concavo-convex pattern of the pattern-substrate, in a thickness of not flattening a front surface; (c) applying annealing to the first layer; and (d) forming a second layer by epitaxially growing a nitride semiconductor containing aluminum so as to overlap on the first layer after performing (c), and in a thickness of flattening a front surface, and constituting the nitride semiconductor layer by the first layer and the second layer.Type: GrantFiled: December 5, 2017Date of Patent: July 27, 2021Assignees: SCIOCS COMPANY LIMITED, SUMITOMO CHEMICAL COMPANY LIMITED, MIE UNIVERSITYInventors: Hajime Fujikura, Taichiro Konno, Hideto Miyake
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Publication number: 20210217927Abstract: A group III-nitride laminated substrate includes a sapphire substrate, a first layer that is formed on the sapphire substrate and is made of aluminum nitride, a second layer that is formed on the first layer and serves as an n-type layer made of gallium nitride and doped with an n-type dopant, a third layer that is formed on the second layer and serves as a light-emitting layer made of a group III-nitride, and a fourth layer that is formed on the third layer and serves as a p-type layer made of a group III-nitride and doped with a p-type dopant. The second layer has a thickness of 7 ?m or less. A half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less.Type: ApplicationFiled: November 19, 2020Publication date: July 15, 2021Applicants: SCIOCS COMPANY LIMITED, SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Hajime FUJIKURA, Taichiro KONNO, Takeshi KIMURA
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Publication number: 20210184080Abstract: Provided is a technology capable of improving the quality of a GaN layer that is formed on an underlying substrate. A group III-nitride laminated substrate includes an underlying substrate, a first layer that is formed on the underlying substrate and is made of aluminum nitride, and a second layer that is formed on the first layer and is made of gallium nitride. The second layer has a thickness of 10 ?m or less. A half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less.Type: ApplicationFiled: November 19, 2020Publication date: June 17, 2021Applicants: SCIOCS COMPANY LIMITED, SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Hajime FUJIKURA, Taichiro KONNO, Takeshi KIMURA
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Publication number: 20210151625Abstract: An object of the present disclosure is to provide a technique capable of attaining an AlN template which has less strain and is suitable for producing the ultraviolet LED. Provided is a nitride semiconductor laminate structure, including at least a sapphire substrate, a first AlN layer formed on a principal surface of the sapphire substrate, and a second AlN layer formed on the first AlN layer, wherein an absolute value of a strain amount ?2 of the second AlN layer in the a-axis direction is smaller than an absolute value of a strain amount ?1 of the first AlN layer in the a-axis direction.Type: ApplicationFiled: September 18, 2020Publication date: May 20, 2021Applicants: SCIOCS COMPANY LIMITED, SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Taichiro KONNO, Takeshi KIMURA, Hajime FUJIKURA
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Patent number: 11008671Abstract: An object of the present invention is to improve quality of a group-III nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal represented by the composition formula of InxAlyGa1-x-yN (satisfying 0?x?1, 0?y?1, 0?x+y?1), with a hardness exceeding 22.0 GPa as measured by a nanoindentation method using an indenter with a maximum load applied thereto being within a range of 1 mN or more and 50 mN or less.Type: GrantFiled: May 23, 2019Date of Patent: May 18, 2021Assignees: SCIOCS COMPANY LIMITED, SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Hajime Fujikura, Taichiro Konno, Takayuki Suzuki, Toshio Kitamura, Tetsuji Fujimoto, Takehiro Yoshida
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Publication number: 20200127163Abstract: There is provided a nitride semiconductor template, including: a substrate having a front surface and a back surface opposite to the front surface; a back side semiconductor layer provided on a back surface side of the substrate, comprising a polycrystalline group III nitride semiconductor, and having a linear expansion coefficient different from a linear expansion coefficient of the substrate; and a front side semiconductor layer provided on a front surface side of the substrate, comprising a monocrystalline group III nitride semiconductor, and having a linear expansion coefficient different from a linear expansion coefficient of the substrate, wherein a thickness of the front side semiconductor layer is a thickness exceeding a critical thickness at which cracks are generated in the front side semiconductor layer when only the front side semiconductor layer is formed without forming the back side semiconductor layer.Type: ApplicationFiled: January 24, 2017Publication date: April 23, 2020Inventors: Hajime FUJIKURA, Taichiro KONNO
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Publication number: 20200031668Abstract: An object of the present invention is to improve quality of a nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal in which a composition formula is represented by InxAlyGa1-x-yN (satisfying 0?x?1, 0?y?1, 0?x+y?1), and the concentration of B in the crystal is less than 1×1015 at/cm3, and each of the concentrations of O and C in the crystal is less than 1×1015 at/cm3 in a region of 60% or more of a main surface.Type: ApplicationFiled: July 29, 2019Publication date: January 30, 2020Inventors: Hajime FUJIKURA, Taichiro KONNO, Takehiro YOSHIDA
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Publication number: 20200032417Abstract: An object of the present invention is to improve quality of a group-III nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal represented by the composition formula of InxAlyGa1-x-yN (satisfying 0?x?1, 0?y?1, 0?x+y?1), with a hardness exceeding 22.0 GPa as measured by a nanoindentation method using an indenter with a maximum load applied thereto being within a range of 1 mN or more and 50 mN or less.Type: ApplicationFiled: May 23, 2019Publication date: January 30, 2020Inventors: Hajime FUJIKURA, Taichiro KONNO, Takayuki SUZUKI, Toshio KITAMURA, Tetsuji FUJIMOTO, Takehiro YOSHIDA
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Patent number: 10472715Abstract: A nitride semiconductor template includes a heterogeneous substrate, a first nitride semiconductor layer that is formed on one surface of the heterogeneous substrate, includes a nitride semiconductor and has an in-plane thickness variation of not more than 4.0%, and a second nitride semiconductor layer that is formed on an annular region including an outer periphery of an other surface of the heterogeneous substrate, includes the nitride semiconductor and has a thickness of not less than 1 ?m.Type: GrantFiled: February 17, 2016Date of Patent: November 12, 2019Assignee: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Shusei Nemoto, Taichiro Konno, Hajime Fujikura
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Patent number: 10294566Abstract: There is provided a substrate processing apparatus, comprising: a substrate placing table which is provided to at least one of the temperature elevating part and the temperature lowering part formed in a container, and which causes heat-transfer to occur with the substrate placed on a placing surface; and a temperature control part which controls a temperature of the substrate placing table, wherein the temperature control part is configured to: control the temperature of the substrate placing table so that the temperature of the substrate to be loaded into the processing part is elevated to a predetermined temperature, before the substrate is placed on the substrate placing table, when the substrate placing table is provided to the temperature elevating part; and control the temperature of the substrate placing table so that the temperature of the processed substrate unloaded from the processing part is lowered to a predetermined temperature, before the substrate is placed on the substrate placing table, wheType: GrantFiled: December 22, 2015Date of Patent: May 21, 2019Assignee: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Hajime Fujikura, Taichiro Konno, Takayuki Numata, Shusei Nemoto
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Patent number: 10084113Abstract: A nitride semiconductor template includes a substrate, an AlN layer that is formed on the substrate and that includes Cl, and a nitride semiconductor layer formed on the AlN layer. In the AlN layer, a concentration of the Cl in a region on a side of the substrate is higher than that in a region on a side of the nitride semiconductor layer. Also, a light-emitting element includes the nitride semiconductor template, and a light-emitting layer formed on the nitride semiconductor template.Type: GrantFiled: January 31, 2017Date of Patent: September 25, 2018Assignee: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Taichiro Konno, Hajime Fujikura, Shusei Nemoto
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Publication number: 20180158681Abstract: There is provided a method for manufacturing a nitride semiconductor template constituted by forming a nitride semiconductor layer on a substrate, comprising: (a) preparing a pattern-substrate as the substrate, with a concavo-convex pattern formed on a front surface of the pattern-substrate, (b) forming a first layer by epitaxially growing a nitride semiconductor containing aluminum on the concavo-convex pattern of the pattern-substrate, in a thickness of not flattening a front surface; (c) applying annealing to the first layer; and (d) forming a second layer by epitaxially growing a nitride semiconductor containing aluminum so as to overlap on the first layer after performing (c), and in a thickness of flattening a front surface, and constituting the nitride semiconductor layer by the first layer and the second layer.Type: ApplicationFiled: December 5, 2017Publication date: June 7, 2018Applicants: SCIOCS COMPANY LIMITED, SUMITOMO CHEMICAL COMPANY, LIMITED, MIE UNIVERSITYInventors: Hajime FUJIKURA, Taichiro KONNO, Hideto MIYAKE