Patents by Inventor Taiga ISODA

Taiga ISODA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210083170
    Abstract: According to one embodiment, a magnetic memory device includes a substrate, a first layer stack, and a second layer stack at a same side of the first layer stack relative to the substrate, and farther than the first layer stack from the substrate. Each of the first and second layer stack includes a reference layer, a tunnel barrier layer provided in a direction relative to the reference layer, the direction being perpendicular to the substrate, a storage layer provided in the direction relative to the tunnel barrier layer, and a first nonmagnetic layer provided in the direction relative to the storage layer. A heat absorption rate of the first nonmagnetic layer of the first layer stack is lower than a heat absorption rate of the first nonmagnetic layer of the second layer stack.
    Type: Application
    Filed: March 12, 2020
    Publication date: March 18, 2021
    Applicant: KIOXIA CORPORATION
    Inventors: Kazuya SAWADA, Young Min EEH, Eiji KITAGAWA, Taiga ISODA, Tadaaki OIKAWA, Kenichi YOSHINO
  • Publication number: 20210074908
    Abstract: According to one embodiment, a magnetic device includes a layer stack. The layer stack includes a first ferromagnetic layer, a second ferromagnetic layer, a first nonmagnetic layer between the first ferromagnetic layer and the second ferromagnetic layer, and a second nonmagnetic layer. The first ferromagnetic layer is interposed between the second nonmagnetic layer and the first nonmagnetic layer. The first nonmagnetic layer and the second nonmagnetic layer contain a magnesium oxide (MgO). The first ferromagnetic layer contains a higher amount of boron (B) at an interface with the first nonmagnetic layer than at an interface with the second nonmagnetic layer.
    Type: Application
    Filed: March 12, 2020
    Publication date: March 11, 2021
    Applicant: KIOXIA CORPORATION
    Inventors: Tadaaki OIKAWA, Young Min EEH, Kenichi YOSHINO, Eiji KITAGAWA, Kazuya SAWADA, Taiga ISODA
  • Publication number: 20210074911
    Abstract: According to one embodiment, a magnetoresistive memory device includes: a first ferromagnetic layer; a stoichiometric first layer; a first insulator between the first ferromagnetic layer and the first layer; a second ferromagnetic layer between the first insulator and the first layer; and a non-stoichiometric second layer between the second ferromagnetic layer and the first layer. The second layer is in contact with the second ferromagnetic layer and the first layer.
    Type: Application
    Filed: March 10, 2020
    Publication date: March 11, 2021
    Applicants: KIOXIA CORPORATION, SK HYNIX INC.
    Inventors: Taiga ISODA, Eiji KITAGAWA, Young Min EEH, Tadaaki OIKAWA, Kazuya SAWADA, Kenichi YOSHINO, Jong Koo LIM, Ku Youl JUNG, Guk Cheon KIM
  • Patent number: 10873021
    Abstract: According to one embodiment, a magnetic device includes a magnetoresistive effect element including a first ferromagnet, a conductor, and an oxide provided between the first ferromagnet and the conductor, the oxide including a first oxide of a rare-earth element and a second oxide of an element of which a covalent radius is smaller than a covalent radius of the rare-earth element.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: December 22, 2020
    Assignees: TOSHIBA MEMORY CORPORATION, SK HYNIX INC.
    Inventors: Young Min Eeh, Daisuke Watanabe, Jae-Hyoung Lee, Toshihiko Nagase, Kazuya Sawada, Tadaaki Oikawa, Kenichi Yoshino, Taiga Isoda
  • Patent number: 10840434
    Abstract: According to an embodiment, a storage device includes a resistance change element. The resistance change element includes a stacked structure including a first ferromagnet, a second ferromagnet, and a first nonmagnet between the first ferromagnet and the second ferromagnet. The first nonmagnet includes a boron-doped rare-earth oxide.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: November 17, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Eiji Kitagawa, Young Min Eeh, Tadaaki Oikawa, Kenichi Yoshino, Kazuya Sawada, Taiga Isoda
  • Publication number: 20200302987
    Abstract: According to one embodiment, a magnetic device includes: a first magnetic material provided above a substrate; a second magnetic material provided between the substrate and the first magnetic material; a nonmagnetic material provided between the first magnetic material and the second magnetic material; a first layer provided between the substrate and the second magnetic material and including an amorphous layer; and a second layer provided between the amorphous layer and the second magnetic material and including a crystal layer.
    Type: Application
    Filed: September 10, 2019
    Publication date: September 24, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Kazuya SAWADA, Young Min EEH, Tadaaki OIKAWA, Kenichi YOSHINO, Eiji KITAGAWA, Taiga ISODA
  • Publication number: 20200294567
    Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer having an invariable magnetization direction; a non-magnetic layer provided on the first magnetic layer; a second magnetic layer provided on the non-magnetic layer, having an invariable magnetization direction, and containing a rare-earth element; a third magnetic layer provided on the second magnetic layer and composed of cobalt; and an oxide layer provided on the third magnetic layer.
    Type: Application
    Filed: September 11, 2019
    Publication date: September 17, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Tadaaki OIKAWA, Young Min EEH, Kazuya SAWADA, Kenichi YOSHINO, Eiji KITAGAWA, Taiga ISODA
  • Publication number: 20200091410
    Abstract: According to an embodiment, a storage device includes a resistance change element. The resistance change element includes a stacked structure including a first ferromagnet, a second ferromagnet, and a first nonmagnet between the first ferromagnet and the second ferromagnet. The first nonmagnet includes a boron-doped rare-earth oxide.
    Type: Application
    Filed: March 13, 2019
    Publication date: March 19, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Eiji KITAGAWA, Young Min EEH, Tadaaki OIKAWA, Kenichi YOSHINO, Kazuya SAWADA, Taiga ISODA
  • Publication number: 20200082857
    Abstract: According to one embodiment, a magnetic device includes a magnetic tunnel junction element, the magnetic tunnel junction element comprising: a first structure having ferromagnetism; a second structure having ferromagnetism; and a first nonmagnet provided between the first structure and the second structure; wherein: the first structure and the second structure are antiferromagnetically coupled via the first nonmagnet; and the first structure includes a first ferromagnetic nitride.
    Type: Application
    Filed: March 13, 2019
    Publication date: March 12, 2020
    Applicants: TOSHIBA MEMORY CORPORATION, SK HYNIX INC.
    Inventors: Young Min EEH, Taeyoung LEE, Kazuya SAWADA, Eiji KITAGAWA, Taiga ISODA, Tadaaki OIKAWA, Kenichi YOSHINO
  • Publication number: 20190296226
    Abstract: According to one embodiment, a magnetic device includes a magnetoresistive effect element including a first ferromagnet, a conductor, and an oxide provided between the first ferromagnet and the conductor, the oxide including a first oxide of a rare-earth element and a second oxide of an element of which a covalent radius is smaller than a covalent radius of the rare-earth element.
    Type: Application
    Filed: September 6, 2018
    Publication date: September 26, 2019
    Applicants: TOSHIBA MEMORY CORPORATION, SK HYNIX INC.
    Inventors: Young Min EEH, Daisuke WATANABE, Jae-Hyoung LEE, Toshihiko NAGASE, Kazuya SAWADA, Tadaaki OIKAWA, Kenichi YOSHINO, Taiga ISODA