Abstract: A semiconductor device having a copper wiring and an insulating layer provided on the copper wiring, where after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer. The insulating layer contains at least one polyimide that has (i) a structure derived from 4,4?-oxydiphthalic acid dianhydride and a structure derived from 4,4?-diaminodiphenyl ether; or (ii) a structure derived from 3,3?4,4?-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4?-diaminodiphenyl ether; or (iii) a structure derived from 4,4?-oxydiphthalic acid dianhydride and a structure derived from 2,2?-dimethyl-4,4?-diaminobiphenyl.

Abstract: A negative-type photosensitive resin composition that has a satisfactory imidization rate and can yield a resin layer with high chemical resistance, even under low-temperature curing conditions of 200° C. or below, the negative-type photosensitive resin composition containing a photopolymerization initiator (B) in a proportion of 0.1 part by mass to 20 parts by mass with respect to 100 parts by mass of a polyimide precursor (A), the polyimide precursor (A) being a polyamic acid ester or polyamic acid salt with a specific structure, and the weight-average molecular weight (Mw) of the polyimide precursor (A) being 3,000 or greater and less than 16,000, in terms of polystyrene, according to gel permeation chromatography (GPC).

Abstract: A semiconductor device having a copper wiring and an insulating layer provided on the copper wiring, where after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer. The insulating layer contains at least one polyimide that has (i) a structure derived from 4,4?-oxydiphthalic acid dianhydride and a structure derived from 4,4?-diaminodiphenyl ether; or (ii) a structure derived from 3,3?4,4?-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4?-diaminodiphenyl ether; or (iii) a structure derived from 4,4?-oxydiphthalic acid dianhydride and a structure derived from 2,2?-dimethyl-4,4?-diaminobiphenyl.

Abstract: A negative-type photosensitive resin composition that has a satisfactory imidization rate and can yield a resin layer with high chemical resistance, even under low-temperature curing conditions of 200° C. or below, the negative-type photosensitive resin composition containing a photopolymerization initiator (B) in a proportion of 0.1 part by mass to 20 parts by mass with respect to 100 parts by mass of a polyimide precursor (A), the polyimide precursor (A) being a polyamic acid ester or polyamic acid salt with a specific structure, and the weight-average molecular weight (Mw) of the polyimide precursor (A) being 3,000 or greater and less than 16,000, in terms of polystyrene, according to gel permeation chromatography (GPC).

Abstract: A photosensitive resin composition containing a resin and a compound each having a structure specified by the present specification provides a cured film having excellent adhesiveness to copper wiring.

Abstract: A photosensitive resin composition containing a resin and a compound each having a structure specified by the present specification provides a cured film having excellent adhesiveness to copper wiring.

Abstract: A semiconductor device having a copper wiring and an insulating layer provided on the copper wiring, where after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer. The insulating layer contains at least one polyimide that has (i) a structure derived from 4,4?-oxydiphthalic acid dianhydride and a structure derived from 4,4?-diaminodiphenyl ether; or (ii) a structure derived from 3,3?4,4?-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4?-diaminodiphenyl ether; or (iii) a structure derived from 4,4?-oxydiphthalic acid dianhydride and a structure derived from 2,2?-dimethyl-4,4?-diaminobiphenyl.

Abstract: A photosensitive resin composition, ensuring that after a high-temperature storage test, a void is less likely to be generated at the interface of a Cu layer in contact with a polyimide layer and a high-adhesion polyimide layer is obtained, and a polyimide using the photosensitive resin composition, can be provided. Furthermore, a semiconductor device in which after a high-temperature storage test, a void is less likely to be generated at the interface of a Cu layer in contact with a polyimide layer and short circuiting or disconnection following a high-temperature storage test is unlikely to occur. A photosensitive resin composition is characterized by including a component (A) as a photosensitive polyimide precursor, and a component (B) containing a structure represented by formula (B1). (In formula (B1), Z is a sulfur or oxygen atom, and each of R1 to R4 independently represents a hydrogen atom or a monovalent organic group).

Abstract: A photosensitive resin composition containing a resin and a compound each having a structure specified by the present specification provides a cured film having excellent adhesiveness to copper wiring.

Abstract: A photosensitive resin composition, ensuring that after a high-temperature storage test, a void is less likely to be generated at the interface of a Cu layer in contact with a polyimide layer and a high-adhesion polyimide layer is obtained, and a polyimide using the photosensitive resin composition, can be provided. Furthermore, a semiconductor device in which after a high-temperature storage test, a void is less likely to be generated at the interface of a Cu layer in contact with a polyimide layer and short circuiting or disconnection following a high-temperature storage test is unlikely to occur. A photosensitive resin composition is characterized by including a component (A) as a photosensitive polyimide precursor, and a component (B) containing a structure represented by formula (B1). (In formula (B1), Z is a sulfur or oxygen atom, and each of R1 to R4 independently represents a hydrogen atom or a monovalent organic group).

Abstract: A negative-type photosensitive resin composition that has a satisfactory imidization rate and can yield a resin layer with high chemical resistance, even under low-temperature curing conditions of 200° C. or below, the negative-type photosensitive resin composition containing a photopolymerization initiator (B) in a proportion of 0.1 part by mass to 20 parts by mass with respect to 100 parts by mass of a polyimide precursor (A), the polyimide precursor (A) being a polyamic acid ester or polyamic acid salt with a specific structure, and the weight-average molecular weight (Mw) of the polyimide precursor (A) being 3,000 or greater and less than 16,000, in terms of polystyrene, according to gel permeation chromatography (GPC).