Abstract: A semiconductor device includes an SiC semiconductor substrate including a diffusion layer, a first electrode provided on the SiC semiconductor substrate, a second electrode provided on the first electrode, and a resin section that is substantially the same size in a plan view as the SiC semiconductor substrate, and that is configured to seal in the second electrode.

Abstract: A semiconductor device includes: a first semiconductor chip; plural redistribution lines provided on a main face of the first semiconductor chip, the plural redistribution lines including a redistribution line that includes a first land and a redistribution line that includes a second land; a first electrode provided within the first land, one end of the first electrode being connected to the first land, and another end of the first electrode being connected to an external connection terminal; and a second electrode provided within the second land, one end of the second electrode being connected to the second land, wherein a shortest distance between an outer edge of the second land and an outer edge of the second electrode, is less than, a shortest distance between an outer edge of the first land and an outer edge of the first electrode.

Abstract: A semiconductor device includes an SiC semiconductor substrate including a diffusion layer, a first electrode provided on the SiC semiconductor substrate, a second electrode provided on the first electrode, and a resin section that is substantially the same size in a plan view as the SiC semiconductor substrate, and that is configured to seal in the second electrode.

Abstract: A semiconductor device includes: a wire including a first conductive member disposed at a semiconductor substrate and a second conductive member disposed at a surface of the first conductive member, the second conductive member having an ionization tendency less than the first conductive member, wherein the first conductive member includes a first surface disposed close to the second conductive member and having a width smaller than a width of a second surface of the first conductive member which is disposed close to the semiconductor substrate, and wherein the second conductive member has a width larger than the width of the first surface of the first conductive member and smaller than the width of the second surface of the first conductive member.

Abstract: A semiconductor device includes: a first semiconductor chip; plural redistribution lines provided on a main face of the first semiconductor chip, the plural redistribution lines including a redistribution line that includes a first land and a redistribution line that includes a second land; a first electrode provided within the first land, one end of the first electrode being connected to the first land, and another end of the first electrode being connected to an external connection terminal; and a second electrode provided within the second land, one end of the second electrode being connected to the second land, wherein a shortest distance between an outer edge of the second land and an outer edge of the second electrode, is less than, a shortest distance between an outer edge of the first land and an outer edge of the first electrode.

Abstract: A semiconductor device includes: a first semiconductor chip; plural redistribution lines provided on a main face of the first semiconductor chip, the plural redistribution lines including a redistribution line that includes a first land and a redistribution line that includes a second land; a first electrode provided within the first land, one end of the first electrode being connected to the first land, and another end of the first electrode being connected to an external connection terminal; and a second electrode provided within the second land, one end of the second electrode being connected to the second land, wherein a shortest distance between an outer edge of the second land and an outer edge of the second electrode, is less than, a shortest distance between an outer edge of the first land and an outer edge of the first electrode.

Abstract: A semiconductor device includes: a redistribution line provided on a main face of a first semiconductor chip; an insulating film covering a front face of the redistribution line, the insulating film including a first opening and a second opening that each partially expose the redistribution line; a first electrode provided on the insulating film, and is connected to the redistribution line at the first opening, the first electrode formed of the same material as the redistribution line; and a second electrode provided on the insulating film, and is connected to the redistribution line at the second opening, the second electrode formed of a material that differ from a material of the first electrode.

Abstract: A semiconductor device includes: a wire including a first conductive member disposed at a semiconductor substrate and a second conductive member disposed at a surface of the first conductive member, the second conductive member having an ionization tendency less than the first conductive member, wherein the first conductive member includes a first surface disposed close to the second conductive member and having a width smaller than a width of a second surface of the first conductive member which is disposed close to the semiconductor substrate, and wherein the second conductive member has a width larger than the width of the first surface of the first conductive member and smaller than the width of the second surface of the first conductive member.

Abstract: A semiconductor device includes: a first semiconductor chip; plural redistribution lines provided on a main face of the first semiconductor chip, the plural redistribution lines including a redistribution line that includes a first land and a redistribution line that includes a second land; a first electrode provided within the first land, one end of the first electrode being connected to the first land, and another end of the first electrode being connected to an external connection terminal; and a second electrode provided within the second land, one end of the second electrode being connected to the second land, wherein a shortest distance between an outer edge of the second land and an outer edge of the second electrode, is less than, a shortest distance between an outer edge of the first land and an outer edge of the first electrode.

Abstract: A semiconductor device includes: a redistribution line provided on a main face of a first semiconductor chip; an insulating film covering a front face of the redistribution line, the insulating film including a first opening and a second opening that each partially expose the redistribution line; a first electrode provided on the insulating film, and is connected to the redistribution line at the first opening, the first electrode formed of the same material as the redistribution line; and a second electrode provided on the insulating film, and is connected to the redistribution line at the second opening, the second electrode formed of a material that differ from a material of the first electrode.

Abstract: Disclosed is a semiconductor device that comprises a first insulating film provided on a main face of a semiconductor substrate; a first pedestal provided at a first wiring layer on the first insulating layer; a second insulating film provided on the first wiring layer; and a second pedestal provided at a second wiring layer on the second insulating film, wherein, when the first and second pedestals are projected in a direction perpendicular to the main face onto a plane parallel to the main face, the second pedestal is larger than the first pedestal, and the whole of the first pedestal is disposed at an inside of the second pedestal.

Abstract: Disclosed is a semiconductor device that comprises a first insulating film provided on a main face of a semiconductor substrate; a first pedestal provided at a first wiring layer on the first insulating layer; a second insulating film provided on the first wiring layer; and a second pedestal provided at a second wiring layer on the second insulating film, wherein, when the first and second pedestals are projected in a direction perpendicular to the main face onto a plane parallel to the main face, the second pedestal is larger than the first pedestal, and the whole of the first pedestal is disposed at an inside of the second pedestal.