Abstract: A highly-sensitive ultrasonic transducer with good yield is provided. The ultrasonic transducer includes a cavity layer, a pair of electrodes positioned above and below the cavity layer, insulating layers disposed above and below each of the pair of electrodes, and a filled hole that penetrates, in a vertical direction, at least a portion of the insulating layers positioned above the cavity layer. When the ultrasonic transducer is viewed from above, each electrode of the pair of electrodes includes, at a position that overlaps the embedded hole, a non-electrode region where the electrodes are not formed.

Abstract: A state monitor system and a state monitor method capable of accurately controlling quality of a structure are provided. A state monitor system that monitors a state of three-dimensional layer laminated manufacturing includes: an acoustic emission sensor 23 configured to detect sound generated from the structure; and an analyzer 12 configured to analyze a defect of the structure, based on an acoustic emission signal AES included in an output signal OT of the acoustic emission sensor 23. In the analyzer 12, a memory 52 stores defect DB information 61 representing correspondence between the acoustic emission signal AES and a defect state DS of the structure.

Abstract: A technique capable of improving a performance of a semiconductor detector is provided. The semiconductor detector is made based on injection of an underfill into a gap between a first semiconductor chip and a second semiconductor chip in a flip-chip connection state, but the underfill is not formed in periphery of a connection structure connecting a reading electrode pad and a gate terminal through a bump electrode.

Abstract: A capacitive device includes a unit cell including a CMUT, and a transmission/reception plate for impedance matching which is provided above the unit cell via a connection portion, in which a membrane of the CMUT constituting the unit cell is connected to the transmission/reception plate via the connection portion having an area smaller than that of the transmission/reception plate. The area of the transmission/reception plate is desirably larger than the area of a hollow portion of the CMUT.

Abstract: Capacitors, each of which is electrically connected to a capacitor which is the cell of the CMUT mounted in a chip and is used as a DC block capacitor for protecting an amplifying circuit, are formed as many as plural aligned channels in the chip. The capacitor is an electrostatic capacitance element which is not vibrated acoustically.

Abstract: An optical scanning device includes: an optical scanning unit configured to repeatedly scan an irradiation destination of irradiation light to a predetermined trajectory; a light emission control unit configured to control light emission of the irradiation light to irradiate irradiation points to the predetermined trajectory; and a driving signal generation unit configured to generate a driving signal for driving the optical scanning unit, wherein the light emission control unit irradiates the irradiation points to the predetermined trajectory so that the irradiation points are substantially uniformly dispersed in a region in which a density of the irradiation points is relatively low in a region in which the irradiation light is irradiated.

Abstract: A capacitive micromachined ultrasonic transducer 111A includes: a silicon substrate 101; an insulating film 102 formed over the silicon substrate 101; a lower electrode 103; insulating films 104 and 106; a cavity 105 constituted by a void formed in a portion of the insulating film 106; an upper electrode 107; insulating films 108 and 114; and a protective film 109. In addition, the insulating film 106, upper electrode 107, insulating film 108 and insulating film 114 above the cavity 105 configure a vibration film 110, and the protective film 109 above the vibration film 110 is divided into a plurality of isolated patterns regularly arranged with a gap 115 having a constant spacing formed therebetween.

Abstract: A technique capable of improving a performance of a semiconductor detector is provided. The semiconductor detector is made based on injection of an underfill into a gap between a first semiconductor chip and a second semiconductor chip in a flip-chip connection state, but the underfill is not formed in periphery of a connection structure connecting a reading electrode pad and a gate terminal through a bump electrode.

Abstract: Disclosed is a measurement method of ultrasonic waves using a capacitive micromachined ultrasonic transducer. The method includes measuring a ultrasonic wave by applying a bias voltage to the capacitive micromachined ultrasonic transducer in each of a plurality of first periods, and applying a voltage that is equal to or greater than 0V and smaller than the bias voltage to the capacitive micromachined ultrasonic transducer in a second period between two first periods among the plurality of first periods.

Abstract: Technique that enables precisely measuring cavity height and precisely grasping maximum transmission sound pressure in an ultrasonic probe is provided to the ultrasonic probe using CMUT. The ultrasonic probe according to the present invention includes plural cells each of which includes a lower electrode and an upper electrode arranged via a gap with respect to the lower electrode, and the plural cells include an ultrasonic cell the gap of which is void and which transmits/receives an ultrasonic wave and a reference cell the gap of which is filled with a conductive material. Electrostatic capacity of the ultrasonic cell and the reference cell is measured, parasitic capacity included in the measured electrostatic capacity as to the ultrasonic cell is corrected using parasitic capacity included in the measured electrostatic capacity as to the reference cell, and cavity height is calculated on the basis of the corrected electrostatic capacity of the ultrasonic cell.

Abstract: An object of the present invention is to provide an ultrasonic transducer having a high sensitivity and a high durability. An ultrasonic transducer includes: a pair of upper and lower electrodes; a cavity layer having a vibration space directly sandwiched between the pair of electrodes; and an insulating layer sandwiched between the pair of electrodes and disposed around the vibration space. A vertical thickness of the insulating layer is greater than that of the cavity layer.

Abstract: A highly-sensitive ultrasonic transducer with good yield is provided. The ultrasonic transducer includes a cavity layer, a pair of electrodes positioned above and below the cavity layer, insulating layers disposed above and below each of the pair of electrodes, and a filled hole that penetrates, in a vertical direction, at least a portion of the insulating layers positioned above the cavity layer. When the ultrasonic transducer is viewed from above, each electrode of the pair of electrodes includes, at a position that overlaps the embedded hole, a non-electrode region where the electrodes are not formed.

Abstract: An ultrasonic transducer element includes a substrate, a lower electrode on a first surface of the substrate, a first insulating film on the lower electrode, a first cavity layer on the first insulating film, a second insulating film on the first cavity layer, an upper electrode on the second insulating film that overlaps the first cavity layer, a third insulating film on the upper electrode, a second cavity layer on the third insulating film, a fourth insulating film on the second cavity layer, a fixing portion formed by the second to fourth insulating films, a movable portion in a membrane insides the second cavity layer, a first connection portion and a second connection portion that are stacked with a gap and the connection portions are configured by the second to fourth insulating films connecting the movable portion and the fixing portion.

Abstract: A capacitive device includes a unit cell including a CMUT, and a transmission/reception plate for impedance matching which is provided above the unit cell via a connection portion, in which a membrane of the CMUT constituting the unit cell is connected to the transmission/reception plate via the connection portion having an area smaller than that of the transmission/reception plate. The area of the transmission/reception plate is desirably larger than the area of a hollow portion of the CMUT.

Abstract: Capacitors, each of which is electrically connected to a capacitor which is the cell of the CMUT mounted in a chip and is used as a DC block capacitor for protecting an amplifying circuit, are formed as many as plural aligned channels in the chip. The capacitor is an electrostatic capacitance element which is not vibrated acoustically.

Abstract: Performance of an ultrasonic examination device, which includes an ultrasonic sensor of a capacitance detection type including a cavity between electrodes and vibrating a membrane, is enhanced. A cell which is a capacitive type device provided with a lower electrode, a cavity, and an upper electrode in a membrane, which are stacked in a longitudinal direction, and a condenser provided with the lower electrode and an upper electrode which are stacked in the longitudinal direction, are formed in one semiconductor chip. The cell and the condenser are connected to each other in parallel, and, when ultrasonic waves are transmitted and received using the cell, connection between a DC bias power source and the semiconductor chip is blocked, and a direct current voltage is applied to the cell from the condenser.

Abstract: An optical scanning device includes: an optical scanning unit configured to repeatedly scan an irradiation destination of irradiation light to a predetermined trajectory; a light emission control unit configured to control light emission of the irradiation light to irradiate irradiation points to the predetermined trajectory; and a driving signal generation unit configured to generate a driving signal for driving the optical scanning unit, wherein the light emission control unit irradiates the irradiation points to the predetermined trajectory so that the irradiation points are substantially uniformly dispersed in a region in which a density of the irradiation points is relatively low in a region in which the irradiation light is irradiated.

Abstract: A capacitive micromachined ultrasonic transducer 111A includes: a silicon substrate 101; an insulating film 102 formed over the silicon substrate 101; a lower electrode 103; insulating films 104 and 106; a cavity 105 constituted by a void formed in a portion of the insulating film 106; an upper electrode 107; insulating films 108 and 114; and a protective film 109. In addition, the insulating film 106, upper electrode 107, insulating film 108 and insulating film 114 above the cavity 105 configure a vibration film 110, and the protective film 109 above the vibration film 110 is divided into a plurality of isolated patterns regularly arranged with a gap 115 having a constant spacing formed therebetween.

Abstract: An ultrasound imaging probe capable of securing an assembly accuracy of and improving a resolution performance of an obtained image is provided. A photoacoustic catheter includes: a silicon substrate which includes an ultrasonic transducer for detecting an ultrasonic wave formed thereon and a through hole passing through front and rear surfaces; an optical fiber which oscillates a laser; a lens which condenses the laser and is arranged within the through hole; a tubular housing; a glass cover which covers the lens; and a resin which fills a gap between the through hole and the lens. Further, the silicon substrate and the optical fiber are fixed to a part of the housing in the housing.

Abstract: An ultrasonic transducer includes: a hollow portion 110 formed between insulating films 104 and 106 interposed between a lower electrode 103 and an upper electrode 107 above a substrate 101; and a membrane 120 that is configured of insulating films 106, 108, 111, and 112 and the upper electrode 107 above the hollow portion 110 and vibrates at a time of transmission/reception of ultrasonic wave. Also, the hollow portion 110 has a cross-sectional shape according to which a relationship of h1>h2>0 is established when a thickness of a center portion is given as h1 and a thickness of an outer peripheral portion is given as h2.