Patents by Inventor Taiichiro Konno

Taiichiro Konno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7683378
    Abstract: An AlGaInP based light emitting diode is provided with a distributed Bragg reflector comprising a combination of an AlGaAs layer and an AlInP layer, each having a film thickness determined by following formulas (1) to (3): t1={?0/(4×n1)}×???(1), t2={?0/(4×n2)}×(2??)??(2), and 0.5<?<0.9??(3) wherein t1 is a film thickness [nm] of the AlGaAs layer, t2 is a film thickness [nm] of the AlInP layer, ?0 is a wavelength [nm] of a light to be reflected, n1 is a refractive index of the AlGaAs layer to the wavelength of the light to be reflected, and n2 is a refractive index of the AlInP layer to the wavelength of the light to be reflected.
    Type: Grant
    Filed: February 23, 2006
    Date of Patent: March 23, 2010
    Assignee: Hitachi Cable, Ltd.
    Inventors: Manabu Kako, Takehiko Tani, Taiichiro Konno, Masahiro Arai
  • Publication number: 20060192211
    Abstract: An AlGaInP based light emitting diode is provided with a distributed Bragg reflector comprising a combination of an AlGaAs layer and an AlInP layer, each having a film thickness determined by following formulas (1) to (3): t1={?0/(4×n1)}×???(1), t2={?0/(4×n2)}×(2??) ??(2), and 0.5<?<0.9 ??(3) wherein t1 is a film thickness [nm] of the AlGaAs layer, t2 is a film thickness [nm] of the AlInP layer, ?0 is a wavelength [nm] of a light to be reflected, n1 is a refractive index of the AlGaAs layer to the wavelength of the light to be reflected, and n2 is a refractive index of the AlInP layer to the wavelength of the light to be reflected.
    Type: Application
    Filed: February 23, 2006
    Publication date: August 31, 2006
    Inventors: Manabu Kako, Takehiko Tani, Taiichiro Konno, Masahiro Arai