Patents by Inventor Taiji Tachibana

Taiji Tachibana has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6485554
    Abstract: The present invention provides a solution suitable for forming a composite oxide type dielectric thin film containing at least one organometallic compound dissolved in at least one solvent selected from the group consisting of cyclic or acyclic diethers, alkyl-substituted cyclic monoethers, mono- or di-branched alkyl monoethers, alkoxy alcohols, diols, and acetoacetic esters, or dissolved in a solvent mixture comprising at least one solvent selected from the group consisting of cyclic and acyclic saturated hydrocarbons, and at least one solvent selected from the group consisting of cyclic or acyclic diethers, alkyl-substituted cyclic monoethers, mono- or di-branched alkyl monoethers, alkoxy alcohols, diols, acetoacetic esters, and unsubstituted or alkyl-substituted pyridine.
    Type: Grant
    Filed: November 2, 1998
    Date of Patent: November 26, 2002
    Assignee: Mitsubishi Materials Corporation
    Inventors: Atsushi Itsuki, Taiji Tachibana, Katsumi Ogi
  • Patent number: 6355097
    Abstract: Bis(dipivaloylmethanato)diisobutoxytitanium or bis(dipivaloylmethanato)-di(2,2 -dimethyl-1-propoxytitanium per se, or as used as a raw material in a MOCVD process, as is or as a solution in an organic solvent, for example, tetrahydrofuran, produces a dielectric thin film of a fine texture having a film thickness which is proportional to the deposition time and the concentration of the solution.
    Type: Grant
    Filed: May 16, 2001
    Date of Patent: March 12, 2002
    Assignee: Mitsubishi Materials Corporation
    Inventors: Atsushi Itsuki, Taiji Tachibana, Hiroto Uchida, Katsumi Ogi
  • Publication number: 20010050028
    Abstract: Bis(dipivaloylmethanato)diisobutoxytitanium or bis(dipivaloylmethanato)-di(2,2-dimethyl-l-propoxytitanium per se, or as used as a raw material in a MOCVD process, as is or as a solution in an organic solvent, for example, tetrahydrofuran, produces a dielectric thin film of a fine texture having a film thickness which is proportional to the deposition time and the concentration of the solution.
    Type: Application
    Filed: May 16, 2001
    Publication date: December 13, 2001
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Atsushi Itsuki, Taiji Tachibana, Hiroto Uchida, Katsumi Ogi
  • Patent number: 6280518
    Abstract: Bis(dipivaloylmethanato)diisobutoxytitanium or bis(dipivaloylmethanato)-di(2,2-dimethyl-1-propoxytitanium per se, or as used as a raw material in a MOCVD process, as is or as a solution in an organic solvent, for example, tetrahydrofuran, produces a dielectric thin film of a fine texture having a film thickness which is proportional to the deposition time and the concentration of the solution.
    Type: Grant
    Filed: January 15, 1999
    Date of Patent: August 28, 2001
    Assignee: Mitsubishi Materials Corporation
    Inventors: Atsushi Itsuki, Taiji Tachibana, Hiroto Uchida, Katsumi Ogi