Patents by Inventor Taiji Togawa

Taiji Togawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating semiconductor memory device and semiconductor memory device driver
    Publication number: 20050006672
    Abstract: Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.
    Type: Application
    Filed: August 12, 2004
    Publication date: January 13, 2005
    Applicant: Fujitsu AMD Semiconductor Limited
    Inventors: Tatsuya Hashimoto, Toshiyuki Maenosono, Taiji Togawa, Takayuki Enda, Hideo Takagi
  • Method of fabricating semiconductor memory device and semiconductor memory device driver
    Patent number: 6794248
    Abstract: Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.
    Type: Grant
    Filed: October 25, 2002
    Date of Patent: September 21, 2004
    Assignee: Fujitsu Amd Semiconductor Limited
    Inventors: Tatsuya Hashimoto, Toshiyuki Maenosono, Taiji Togawa, Takayuki Enda, Hideo Takagi
  • Method of fabricating semiconductor memory device and semiconductor memory device driver
    Publication number: 20030162354
    Abstract: Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.
    Type: Application
    Filed: October 25, 2002
    Publication date: August 28, 2003
    Applicant: FUJITSU AMD SEMICONDUCTOR LIMITED
    Inventors: Tatsuya Hashimoto, Toshiyuki Maenosono, Taiji Togawa, Takayuki Enda, Hideo Takagi