Patents by Inventor Taijiro Uchida

Taijiro Uchida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8048260
    Abstract: The present invention provides a magnetic neutral line discharge plasma processing system that can apply a plurality of linear magnetic neutral line discharge plasmas simultaneously so as to uniformly process all the surface area of a large rectangular substrate for homogeneousness. The management field generating means of the magnetic neutral line discharge plasma processing system has at least two linear current rods arranged outside the vacuum chamber in parallel with the surface to be processed of the object of processing in the vacuum chamber so as to form at least a linear magnetic neutral line in the vacuum chamber between adjacently located linear current rods.
    Type: Grant
    Filed: June 10, 2003
    Date of Patent: November 1, 2011
    Assignee: ULVAC, Inc.
    Inventor: Taijiro Uchida
  • Patent number: 6885154
    Abstract: The present invention provides a magnetic neutral line plasma discharge processing system that makes it no longer necessary to use an insulator wall in the vacuum chamber and metal such as stainless steel may alternatively be used, while maintaining the features including both time/space and space controllability relative to the size and the location of low pressure, low temperature and high density plasma to be generated. Thus, the cost of the system can be reduced remarkably. As a result, the scope of application of discharge plasma systems can be broadened.
    Type: Grant
    Filed: June 10, 2003
    Date of Patent: April 26, 2005
    Assignee: ULVAC, Inc.
    Inventors: Taijiro Uchida, Toshijyu Kunibe
  • Publication number: 20030230985
    Abstract: The present invention provides a magnetic neutral line plasma discharge processing system that makes it no longer necessary to use an insulator wall in the vacuum chamber and metal such as stainless steel may alternatively be used, while maintaining the features including both time/space and space controllability relative to the size and the location of low pressure, low temperature and high density plasma to be generated. Thus, the cost of the system can be reduced remarkably. As a result, the scope of application of discharge plasma systems can be broadened.
    Type: Application
    Filed: June 10, 2003
    Publication date: December 18, 2003
    Inventors: Taijiro Uchida, Toshijyu Kunibe
  • Publication number: 20030230386
    Abstract: The present invention provides a magnetic neutral line discharge plasma processing system that can apply a plurality of linear magnetic neutral line discharge plasmas simultaneously so as to uniformly process all the surface area of a large rectangular substrate for homogeneousness. The management field generating means of the magnetic neutral line discharge plasma processing system has at least two linear current rods arranged outside the vacuum chamber in parallel with the surface to be processed of the object of processing in the vacuum chamber so as to form at least a linear magnetic neutral line in the vacuum chamber between adjacently located linear current rods.
    Type: Application
    Filed: June 10, 2003
    Publication date: December 18, 2003
    Inventor: Taijiro Uchida
  • Patent number: 6475333
    Abstract: A discharge plasma processing device comprising a chamber with an evacuation system, a magnetic field generation system and an electric field application system with which the feature of operation is first to form a magnetic neutral line in the vacuum chamber and second to produce a plasma along the magnetic neutral line by controlling the shape of the line, its position related to an object to be processed and the plasma parameters is presented as useful device for many kinds of plasma processing like as sputtering, etching and plasma enhanced CVD as freely programmed, for instance extremely in uniform on the surface of the object.
    Type: Grant
    Filed: July 25, 1994
    Date of Patent: November 5, 2002
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventor: Taijiro Uchida
  • Publication number: 20020092619
    Abstract: A discharge plasma processing device comprising a chamber with an evacuation system, a magnetic field generation system and an electric field application system with which the feature of operation is first to form a magnetic neutral line in the vacuum chamber and second to produce a plasma along the magnetic neutral line by controlling the shape of the line, its position related to an object to be processed and the plasma parameters is presented as useful device for many kinds of plasma processing like as sputtering, etching and plasma enhanced CVD as freely programmed, for instance extremely in uniform on the surface of the object.
    Type: Application
    Filed: July 6, 1999
    Publication date: July 18, 2002
    Inventor: TAIJIRO UCHIDA
  • Patent number: 5804027
    Abstract: An apparatus for generating magnetically neutral line discharge type plasma comprises a magnetic field generating coil for forming magnetically neutral lines defined by continuously connecting points of zero-intensity magnetic field that is arranged within the vacuum chamber so that a couple of lines of magnetic force crossing vertically at the magnetically neutral lines in the perpendicular plane where the center axis is located can be connected by surrounding the magnetic field generating coil without intersecting or touching the lateral wall of the vacuum chamber to reduce any possible loss of plasma and any possible damage to the lateral wall.
    Type: Grant
    Filed: February 6, 1997
    Date of Patent: September 8, 1998
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventor: Taijiro Uchida
  • Patent number: 5762750
    Abstract: A surface cleaning apparatus using magnetic neutral line discharged plasma for the purpose of inner-wall surface cleaning of a vacuum vessel assembled in a semiconductor manufacturing machine, which comprises electromagnetic coils for producing a closed magnetic neutral line that is formed by circularly connecting points of zero-intensity magnetic field, rf electric field generator for continuously generating plasma by applying a rf electric field along the magnetic neutral line and a controller for controlling the size and position of the closed magnetic neutral line and the kind, temperature and density of the plasma being generated.
    Type: Grant
    Filed: May 6, 1997
    Date of Patent: June 9, 1998
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Wei Chen, Takeshi Sunada, Masahiro Itoh, Hideki Fujimoto, Taijiro Uchida