Abstract: Provided is a polishing composition that contains a cellulose derivative and can improve the polishing removability and enhance the wettability of a polished surface of a silicon wafer. The polishing composition contains an abrasive, a cellulose derivative, a basic compound, and water. Here, the polishing composition has a zeta potential of -24.0 mV or more.

Abstract: Provided is a polishing composition which contains a water-soluble polymer and is suitable for reducing LPDs. The polishing composition provided in this application includes an abrasive, a water-soluble polymer, and a basic compound. In the polishing composition, the content of a reaction product of a polymerization initiator and a polymerization inhibitor is 0.1 ppb or less of the polishing composition on a weight basis.

Abstract: Provided is a polishing composition which contains a water-soluble polymer and is suitable for reducing LPDs. The polishing composition provided in this application includes an abrasive, a water-soluble polymer, and a basic compound. In the polishing composition, the content of a reaction product of a polymerization initiator and a polymerization inhibitor is 0.1 ppb or less of the polishing composition on a weight basis.

Abstract: Provided is a polishing composition having excellent capability of reducing haze on the surface of an object to be polished. The polishing composition provided by the present invention includes an abrasive, a basic compound, a water-soluble polymer, and water. The water-soluble polymer includes at least a water-soluble polymer P1 and a water-soluble polymer P2. Here, the water-soluble polymer P1 is an acetalized polyvinyl alcohol-based polymer, and the water-soluble polymer P2 is a water-soluble polymer other than the acetalized polyvinyl alcohol-based polymer.

Abstract: The polishing composition provided by the present invention contains an abrasive, a polyvinyl alcohol polymer as a water-soluble polymer, a basic compound, and water, and further contains a trivalent or higher polyvalent organic acid (salt).

Abstract: The present invention relates to a polishing composition containing an abrasive, a water-soluble polymer, an anionic surfactant, a basic compound, and water, in which the anionic surfactant has an oxyalkylene unit, and an average addition mole number of the oxyalkylene unit of the anionic surfactant is more than 3 and 25 or less. According to the present invention, it is possible to provide a polishing composition which can reduce the haze of a polished object and is also excellent in a polishing removal rate.

Abstract: Provided is a polishing composition which contains a water-soluble polymer and is suitable for reducing LPDs. The polishing composition provided in this application includes an abrasive, a water-soluble polymer, and a basic compound. In the polishing composition, the content of a reaction product of a polymerization initiator and a polymerization inhibitor is 0.1 ppb or less of the polishing composition on a weight basis.

Abstract: This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.

Abstract: Provided are polishing compositions comprising a water-soluble polymer and water. The water-soluble polymer of an embodiment has a repeat unit that does not have any hydroxyl groups, and the water-soluble polymer has a hydroxyl group content in a range of 4 mmol/g or higher and 21 mmol/g or lower. The water-soluble polymer of another embodiment has a repeat unit A that has a hydroxyl group and a repeat unit B, and the number of moles of the repeat unit B in the total number of moles of all the repeat units of the water-soluble polymer is 5% or greater.

Abstract: Provided are a polishing composition comprising a water-soluble polymer that has a molecular structure comprising a plurality of repeat unit species having different SP values and a polishing composition exhibiting an etching rate and an abrasive adsorption in prescribed ranges when determined by prescribed methods. Also provided is a method for producing a polishing composition, using an abrasive, a basic compound, a water-soluble polymer having an alkaline-hydrolytic functional group, and water. The method comprises a step of obtaining an agent A comprising at least the basic compound and a step of obtaining an agent B comprising at least the water-soluble polymer H.

Abstract: Provided are polishing compositions comprising a water-soluble polymer and water. The water-soluble polymer of an embodiment has a repeat unit that does not have any hydroxyl groups, and the water-soluble polymer has a hydroxyl group content in a range of 4 mmol/g or higher and 21 mmol/g or lower. The water-soluble polymer of another embodiment has a repeat unit A that has a hydroxyl group and a repeat unit B, and the number of moles of the repeat unit B in the total number of moles of all the repeat units of the water-soluble polymer is 5% or greater.

Abstract: The present invention relates to a polishing composition containing an abrasive, a water-soluble polymer, an anionic surfactant, a basic compound, and water, in which the anionic surfactant has an oxyalkylene unit, and an average addition mole number of the oxyalkylene unit of the anionic surfactant is more than 3 and 25 or less. According to the present invention, it is possible to provide a polishing composition which can reduce the haze of a polished object and is also excellent in a polishing removal rate.

Abstract: To provide a polishing composition capable of realizing a polished surface having smoothness and few defects. A polishing composition contains a water-soluble polymer satisfying the following two conditions (A) and (B): Condition (A): in a first standard solution which contains silica having an average primary particle size of 35 nm, the water-soluble polymer, ammonia, and water and in which the concentration of the silica is 0.48% by mass, the concentration of the water-soluble polymer is 0.0125% by mass, and the pH is 10.0, the adsorption ratio which is a ratio of the amount of the water-soluble polymer adsorbed to the silica to the total amount of the water-soluble polymer contained in the first standard solution is 10% or more; and Condition (B): in a second standard solution which contains silica having an average primary particle size of 35 nm, the water-soluble polymer, ammonia, and water and in which the concentration of the silica is 0.48% by mass, the concentration of the water-soluble polymer is 0.

Abstract: This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.

Abstract: Provided are a polishing composition comprising a water-soluble polymer that has a molecular structure comprising a plurality of repeat unit species having different SP values and a polishing composition exhibiting an etching rate and an abrasive adsorption in prescribed ranges when determined by prescribed methods. Also provided is a method for producing a polishing composition, using an abrasive, a basic compound, a water-soluble polymer having an alkaline-hydrolytic functional group, and water. The method comprises a step of obtaining an agent A comprising at least the basic compound and a step of obtaining an agent B comprising at least the water-soluble polymer H.

Abstract: This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.