Abstract: A film formation method includes (A) to (C) below: (A) preparing a substrate including, on a surface of the substrate, a first region from which an insulating film is exposed and a second region from which a metal film is exposed; (B) forming a self-assembled monolayer in the second region by supplying an organic compound containing a nitro group, which is a raw material of the self-assembled monolayer, in a head group to the surface of the substrate, and selectively adsorbing the organic compound to the second region among the first region and the second region; and (C) forming a second insulating film in the first region by supplying a raw material gas as a raw material of the second insulating film to the surface of the substrate while formation of the second insulating film in the second region is inhibited by the self-assembled monolayer.

Abstract: A film forming method includes the following (A) to (D). (A) Preparing a substrate having a first region in which a metal film is exposed and a second region in which an insulating film is exposed. (B) Supplying an organic compound, which is represented by Chemical Formula (1) described in the specification, to the substrate, the organic compound containing a triple bond between a carbon atom and a nitrogen atom in a head group and containing a double bond or triple bond between carbon atoms in a chain. (C) Selectively adsorbing the organic compound to the first region among the first region and the second region. (D) Polymerizing adjacent chains of the organic compound, thereby forming a polymer film in the first region.

Abstract: An object of the present invention is to provide an adhesive having sufficient adhesion strength during heat-curing when a lens holder and a substrate on which an imaging element is fixed are bonded in camera module assembly, and also having excellent adhesion strength and position accuracy after a high-temperature and high-humidity durability test after curing. The present invention relates to a resin composition comprises (a) a (meth)acrylate group-containing resin, (b) a specific polyfunctional thiol, and (c) a latent curing agent.

Abstract: A film forming method includes preparing a substrate having a first region in which a metal film or an oxide film of the metal film is exposed, and a second region in which an insulating film is exposed, supplying, to the substrate, an organic compound containing, in a head group, a triple bond between carbon atoms represented by Chemical Formula (1) described in the specification, causing the organic compound to be selectively adsorbed in the first region among the first region and the second region, and cleaving the triple bond in the first region and forming a hydrophobic film having a honeycomb structure of carbon atoms through polymerization.

Abstract: A method for manufacturing a semiconductor device including a TiN film. The method comprises: supplying TiCl4 gas to a substrate; purging the TiCl4 gas; supplying NH3 gas to the substrate; purging the NH3 gas; and supplying an inhibitor that inhibits adsorption of TiCl4 or NH3 to the substrate. A plurality of cycles each including the supplying the TiCl4 gas, the purging the TiCl4 gas, the supplying the NH3 gas, and the purging the NH3 gas are performed, at least a part of the plurality of cycles includes the supplying the inhibitor, and after the supplying the inhibitor is performed, the supplying the TiCl4 gas or the supplying the NH3 gas is performed without purging the inhibitor, or, after purging the inhibitor for a shorter time than the purging the TiCl4 gas or the purging the NH3 gas, the supplying the TiCl4 gas or the supplying the NH3 gas is performed.

Abstract: A method of selectively etching a silicon nitride film includes a first step of disposing a target substrate having the silicon nitride film formed thereon in a processing space, a second step of introducing a gas containing H and F into the processing space, and a third step of selectively introducing radicals of an inert gas into the processing space.

Abstract: A method of selectively etching a silicon nitride film includes a first step of disposing a target substrate having the silicon nitride film formed thereon in a processing space, a second step of introducing a gas containing H and F into the processing space, and a third step of selectively introducing radicals of an inert gas into the processing space.

Abstract: A method of manufacturing a semiconductor device having a metal oxide film with workpiece accommodated in a chamber, includes: supplying a precursor gas containing a metal complex into the chamber to form a precursor layer on the workpiece from the precursor gas; supplying an oxidizing gas into the chamber to oxidize the precursor layer so that a metal oxide layer is formed, the oxidizing gas being a gas containing H2O or a gas having a functional group containing hydrogen atoms in the metal complex and containing an oxidant to generate H2O by reaction with the functional group; supplying an H2O removal gas containing alcohols or amines into the chamber to remove H2O adsorbed onto the metal oxide layer; and executing a plurality of cycles each including the supplying a precursor gas and the supplying an oxidizing gas. At least some of the cycles includes the supplying an H2O removal gas.

Abstract: If the capacitance of a snubber capacitor, the inductance of a coil and the magnitude of a resistor are specified such that the resonance frequency of the snubber circuit coincides with the ringing frequency of the transistor, and the impedance of the first loop at the resonance frequency becomes smaller than the impedance of the second loop at the resonance frequency, a current component due to ringing flows in the snubber circuit, and energy is consumed by the resistor. Therefore, it is possible to quickly converge ringing.

Abstract: A method of manufacturing a semiconductor device having a metal oxide film with workpiece accommodated in a chamber, includes: supplying a precursor gas containing a metal complex into the chamber to form a precursor layer on the workpiece from the precursor gas; supplying an oxidizing gas into the chamber to oxidize the precursor layer so that a metal oxide layer is formed, the oxidizing gas being a gas containing H2O or a gas having a functional group containing hydrogen atoms in the metal complex and containing an oxidant to generate H2O by reaction with the functional group; supplying an H2O removal gas containing alcohols or amines into the chamber to remove H2O adsorbed onto the metal oxide layer; and executing a plurality of cycles each including the supplying a precursor gas and the supplying an oxidizing gas. At least some of the cycles includes the supplying an H2O removal gas.

Abstract: If the capacitance of a snubber capacitor, the inductance of a coil and the magnitude of a resistor are specified such that the resonance frequency of the snubber circuit coincides with the ringing frequency of the transistor, and the impedance of the first loop at the resonance frequency becomes smaller than the impedance of the second loop at the resonance frequency, a current component due to ringing flows in the snubber circuit, and energy is consumed by the resistor. Therefore, it is possible to quickly converge ringing.

Abstract: Provided is an organic semiconductor film with which a desired band gap can be securely achieved. In an ultrahigh vacuum film formation device (10), 5,5?,5?,5??,5??,5???-hexabromocyclohexa-m-phenylene (CHP) powder is made to sublimate from a fuel cell (12) by the application of heat energy, bromine is made to separate out by causing the CHP molecules to collide with a catalyst metal layer (M) of a substrate (G), and a plurality of generated phenyl radicals are made to mutually bond through Ullmann reactions, thereby forming a two-dimensional network structure of carbon atoms.