Abstract: The present invention relates to a method for producing an InP-based quantum dot precursor from a phosphorus source and an indium source, in which a silylphosphine compound represented by the following Formula (1) with a content of a compound represented by the following Formula (2) of 0.3 mol % or less is used as the phosphorus source. Further, the present invention provides a method for producing an InP-based quantum dot comprising heating an InP quantum dot precursor to a temperature of 200° C. or more and 350° C. or less to obtain an InP quantum dot. (R is as defined in the specification.

Abstract: A method for producing an indium carboxylate of the present invention comprises the steps of reacting a hydroxyl group-containing indium carboxylate represented by Formula (1): In(RCOO)3-x(OH)x, wherein R is a straight chain or branched chain aliphatic group having 0 to 5 carbon atoms, and x is a number more than 0 and less than 3, with a lower carboxylic acid represented by the following Formula (2): R?COOH, wherein R? is a hydrogen atom or a straight chain or branched chain aliphatic group having 1 to 5 carbon atoms, and the hydrogen atom in the aliphatic group may be replaced with a halogen atom, so as to obtain a product; and then reacting the product with a higher carboxylic acid having 12 or more carbon atoms.

Abstract: The present invention relates to a method for producing an InP-based quantum dot precursor from a phosphorus source and an indium source, in which a silylphosphine compound represented by the following Formula (1) with a content of a compound represented by the following Formula (2) of 0.3 mol % or less is used as the phosphorus source. Further, the present invention provides a method for producing an InP-based quantum dot comprising heating an InP quantum dot precursor to a temperature of 200° C. or more and 350° C. or less to obtain an InP quantum dot. (R is as defined in the specification.