Abstract: An electronic apparatus includes: a first electronic component including a first electrode; solder on the first electrode; and a phase containing In, Ag, and Cu, the phase being dispersed and included in the solder. And a method for manufacturing an electronic apparatus, the method includes: forming solder on a first electrode of a first component, the solder including a phase containing In, Ag, and Cu, the phase being dispersed in the solder.

Abstract: An electrical apparatus includes a first electrical component; a second electrical component; and an In—Sn—Ag alloy connecting the first electrical component and the second electrical component, the In—Sn—Ag alloy containing AgIn2 and Ag2In, a Ag2In content being lower than a AgIn2 content.

Abstract: There is provided a semiconductor device having: a latch circuit having a plurality of data holding nodes; a first capacitance element connected to the first data holding node included in the plurality of data holding nodes; and a first switch element provided between the first data holding node and the first capacitance element.

Abstract: There is provided a semiconductor device having: a latch circuit having a plurality of data holding nodes; a first capacitance element connected to the first data holding node included in the plurality of data holding nodes; and a first switch element provided between the first data holding node and the first capacitance element.

Abstract: There is provided a semiconductor device having: a latch circuit (103, 104) having a plurality of data holding nodes; a first capacitance element (C) connected to the first data holding node (A) included in the plurality of data holding nodes; and a first switch element (SW2) provided between the first data holding node (A) and the first capacitance element (C).

Abstract: A latch circuit includes a feedback circuit having inverter circuits and at least two input terminals and an input circuit for inputting input signals or signals having the same phase as the input signals to the input terminals of the feedback circuit in synchronization with a clock signal. In the feedback circuit section, only when the input signals or the signals having the same phase as the input signals are input to the at least two input terminals at the same time, positive feedback using a predetermined number of amplification stages is applied to the input terminals.

Abstract: A semiconductor device has a first latch circuit, a second latch circuit configured to receive an output of the first latch circuit, a first switching element provided between the first latch circuit and the second latch circuit, a feedback line for feeding data held by the second latch circuit to the first latch circuit, and a second switching element provided on the feedback line.

Abstract: A CAD device according to the embodiments includes means that determines signal transmission time of each signal transmission circuit in an LSI circuit, means that determines an output inversion rate of a flip-flop circuit included in each signal transmission circuit when the flip-flop circuit is exposed to radiation, means that determines a signal transmission circuit that is a critical path, means that calculates a total soft error rate of the LSI circuit on the basis of the signal transmission time, the output inversion rate, and a clock period, and means that, when a predetermined soft error rate is less than the total soft error rate of the LSI circuit as a result of comparison, reducing the total soft error rate of the LSI circuit to the extent possible without changing signal transmission time of the signal transmission circuit, which is a critical path.

Abstract: A semiconductor device includes: a first master-slave flip-flop having a first master latch which receives and latches first data signal in synchronism with first clock and a first slave latch which receives and latches the first data signal from the first master latch in synchronism with second clock; and a second master-slave flip-flop disposed side by side with the first master-slave flip-flop and having a second master latch which receives and latches second data signal in synchronism with third clock and a second slave latch which receives and latches the second data signal from the second master latch in synchronism with fourth clock, and wherein the second slave latch of the second master-slave flip-flop is disposed adjacent to the first master latch of the first master-slave flip-flop and the second master latch of the second master-slave flip-flop is disposed adjacent to the first slave latch of the first master-slave flip-flop.

Abstract: In a random access memory, one of a first conductivity type well constituting a first bit in one column group and another first conductivity type well constituting a second bit selected simultaneously to the first bit in an adjacent column group, is isolated from a common well of the first conductivity type by providing a deep well of a second conductivity type, such that the area of the deep well of the second conductivity type does not exceed the area of one column group.

Abstract: A data holding circuit including a first input terminal through which data is inputted; at least one delay element for delaying the data inputted through the first input terminal; and a first element for holding data, wherein, when the data inputted through the first input terminal and the data delayed by the delay element are equal to each other, the first element holds data corresponding to the data inputted through the first input terminal and wherein, when the data inputted through the first input terminal and the data delayed by the delay element are different from each other, the first element continues to hold the data presently held by the first element.

Abstract: A semiconductor integrated circuit including: a first data hold circuit configured to hold an input signal from a first input terminal; a second data hold circuit configured to hold the input signal from the first input terminal and an input signal from a second input terminal; a gate circuit configured to input an output signal of the first data hold circuit and an output signal of the second data hold circuit and to output a signal corresponding to the output signals of the first and second data hold circuits when the output signals of the first and second data hold circuits are the same as each other; and a third data hold circuit configured to hold the output signal of either the gate circuit or the second data hold circuit, and outputs the output signal to an output terminal.

Abstract: A latch circuit includes an input part receiving an external input signal; a plurality of CMOS inverter circuits divided into a first group that includes a first CMOS inverter circuit and a second CMOS inverter circuit outputting inverted data with respect to the input signal, and a second group that includes a third CMOS inverter circuit and a fourth CMOS inverter circuit outputting the same data as the input signal; and a feedback path through which the input signal is fed back to the input part via the plurality of CMOS inverter circuits, wherein a second-polarity drain belonging to one of the first CMOS inverter circuit and the second CMOS inverter circuit is arranged between a first-polarity drain belonging to the first CMOS inverter circuit and a first-polarity drain belonging to the second CMOS inverter circuit.

Abstract: A semiconductor device includes a first transistor included in a latch circuit, a second transistor that is included in the latch circuit and is formed in a well in which the first transistor is formed, the second transistor having a conduction type identical to that of the first transistor, and a well contact that is provided between the first transistor and the second transistor and connects a power supply to the well.

Abstract: A semiconductor device includes: a first master-slave flip-flop having a first master latch which receives and latches first data signal in synchronism with first clock and a first slave latch which receives and latches the first data signal from the first master latch in synchronism with second clock; and a second master-slave flip-flop disposed side by side with the first master-slave flip-flop and having a second master latch which receives and latches second data signal in synchronism with third clock and a second slave latch which receives and latches the second data signal from the second master latch in synchronism with fourth clock, and wherein the second slave latch of the second master-slave flip-flop is disposed adjacent to the first master latch of the first master-slave flip-flop and the second master latch of the second master-slave flip-flop is disposed adjacent to the first slave latch of the first master-slave flip-flop.

Abstract: In a random access memory, one of a first conductivity type well constituting a first bit in one column group and another first conductivity type well constituting a second bit selected simultaneously to the first bit in an adjacent column group, is isolated from a common well of the first conductivity type by providing a deep well of a second conductivity type, such that the area of the deep well of the second conductivity type does not exceed the area of one column group.

Abstract: A latch circuit includes a feedback circuit having inverter circuits and at least two input terminals and an input circuit for inputting input signals or signals having the same phase as the input signals to the input terminals of the feedback circuit in synchronization with a clock signal. In the feedback circuit section, only when the input signals or the signals having the same phase as the input signals are input to the at least two input terminals at the same time, positive feedback using a predetermined number of amplification stages is applied to the input terminals.

Abstract: A semiconductor device includes a first transistor included in a latch circuit, a second transistor that is included in the latch circuit and is formed in a well in which the first transistor is formed, the second transistor having a conduction type identical to that of the first transistor, and a well contact that is provided between the first transistor and the second transistor and connects a power supply to the well.

Abstract: A semiconductor integrated circuit including: a first data hold circuit configured to hold an input signal from a first input terminal; a second data hold circuit configured to hold the input signal from the first input terminal and an input signal from a second input terminal; a gate circuit configured to input an output signal of the first data hold circuit and an output signal of the second data hold circuit and to output a signal corresponding to the output signals of the first and second data hold circuits when the output signals of the first and second data hold circuits are the same as each other; and a third data hold circuit configured to hold the output signal of either the gate circuit or the second data hold circuit, and outputs the output signal to an output terminal

Abstract: A latch circuit includes: four or more gates; three input terminals and one or two output terminals which are connected to at least one of the four or more gates; a feedback circuit in which respective input terminals of the four or more gates are connected to output terminals of at least another two of the four gates; and a data inverting gate which, when all data input into the three input terminals is the same, outputs inverted data of the data from the output terminals, and when all the data input into the three input terminals is not the same, retains previous data.