Patents by Inventor Tain-Shang Chang

Tain-Shang Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device structure with anti-acid layer and method for forming the same
    Patent number: 11158659
    Abstract: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes an interconnect structure formed over a substrate and a passivation layer formed over the interconnect structure. The semiconductor device structure also includes an anti-acid layer formed in the passivation layer and a bonding layer formed on the anti-acid layer and the passivation layer. The anti-acid layer has a thickness that is greater than about 140 nm.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: October 26, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yin-Shuo Chu, Chi-Chung Yu, Li-Yen Fang, Tain-Shang Chang, Yao-Hsiang Liang, Min-Chih Tsai
  • Semiconductor Device Structure with Anti-Acid Layer and Method for Forming the Same
    Publication number: 20180350855
    Abstract: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes an interconnect structure formed over a substrate and a passivation layer formed over the interconnect structure. The semiconductor device structure also includes an anti-acid layer formed in the passivation layer and a bonding layer formed on the anti-acid layer and the passivation layer. The anti-acid layer has a thickness that is greater than about 140 nm.
    Type: Application
    Filed: July 30, 2018
    Publication date: December 6, 2018
    Inventors: Yin-Shuo Chu, Chi-Chung Yu, Li-Yen Fang, Tain-Shang Chang, Yao-Hsiang Liang, Min-Chih Tsai
  • Barrier layer and structure method
    Patent number: 9847296
    Abstract: A method for forming a multilayer barrier comprises forming a conductive line over a substrate, depositing a dielectric layer over the conductive line, forming a plug opening in the dielectric layer, forming a multilayer barrier through a plurality of deposition processes and corresponding plasma treatment processes.
    Type: Grant
    Filed: February 14, 2014
    Date of Patent: December 19, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chung Chang, Jung-Chih Tsao, Chun Che Lin, Yu-Ming Huang, Tain-Shang Chang, Jian-Shin Tsai
  • SEMICONDUCTOR DEVICE STRUCTURE WITH ANTI-ACID LAYER AND METHOD FOR FORMING THE SAME
    Publication number: 20170170215
    Abstract: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes an interconnect structure formed over a substrate and a passivation layer formed over the interconnect structure. The semiconductor device structure also includes an anti-acid layer formed in the passivation layer and a bonding layer formed on the anti-acid layer and the passivation layer. The anti-acid layer has a thickness that is greater than about 140 nm.
    Type: Application
    Filed: December 15, 2015
    Publication date: June 15, 2017
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yin-Shuo CHU, Chi-Chung YU, Li-Yen FANG, Tain-Shang CHANG, Yao-Hsiang LIANG, Min-Chih TSAI
  • Contact critical dimension control
    Patent number: 9449922
    Abstract: In a method for manufacturing a semiconductor device, a dielectric layer is formed on a substrate, and a contact hole is formed from the dielectric layer to the substrate. A dielectric spacer liner is formed to cover a sidewall and a bottom of the contact hole. A portion of the dielectric spacer liner is removed to expose a portion of the substrate. A metal silicide layer is formed into the substrate through the contact hole.
    Type: Grant
    Filed: February 19, 2016
    Date of Patent: September 20, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tain-Shang Chang, Chia-Han Lai, Ren-Hau Yu, Ching-Yao Sun, Yu-Sheng Wang
  • Contact Critical Dimension Control
    Publication number: 20160172303
    Abstract: In a method for manufacturing a semiconductor device, a dielectric layer is formed on a substrate, and a contact hole is formed from the dielectric layer to the substrate. A dielectric spacer liner is formed to cover a sidewall and a bottom of the contact hole. A portion of the dielectric spacer liner is removed to expose a portion of the substrate. A metal silicide layer is formed into the substrate through the contact hole.
    Type: Application
    Filed: February 19, 2016
    Publication date: June 16, 2016
    Inventors: Tain-Shang Chang, Chia-Han Lai, Ren-Hau Yu, Ching-Yao Sun, Yu-Sheng Wang
  • Contact critical dimension control
    Patent number: 9299607
    Abstract: In a method for manufacturing a semiconductor device, a dielectric layer is formed on a substrate, and a contact hole is formed from the dielectric layer to the substrate. A dielectric spacer liner is formed to cover a sidewall and a bottom of the contact hole. A portion of the dielectric spacer liner is removed to expose a portion of the substrate. A metal silicide layer is formed into the substrate through the contact hole.
    Type: Grant
    Filed: February 13, 2014
    Date of Patent: March 29, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tain-Shang Chang, Chia-Han Lai, Ren-Hau Yu, Ching-Yao Sun, Yu-Sheng Wang
  • Barrier Layer and Structure Method
    Publication number: 20150235954
    Abstract: A method for forming a multilayer barrier comprises forming a conductive line over a substrate, depositing a dielectric layer over the conductive line, forming a plug opening in the dielectric layer, forming a multilayer barrier through a plurality of deposition processes and corresponding plasma treatment processes.
    Type: Application
    Filed: February 14, 2014
    Publication date: August 20, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chung Chang, Jung-Chih Tsao, Chun Che, Yu-Ming Huang, Tain-Shang Chang, Jian-Shin Tsai
  • Contact Critical Dimension Control
    Publication number: 20150228537
    Abstract: In a method for manufacturing a semiconductor device, a dielectric layer is formed on a substrate, and a contact hole is formed from the dielectric layer to the substrate. A dielectric spacer liner is formed to cover a sidewall and a bottom of the contact hole. A portion of the dielectric spacer liner is removed to expose a portion of the substrate. A metal silicide layer is formed into the substrate through the contact hole.
    Type: Application
    Filed: February 13, 2014
    Publication date: August 13, 2015
    Applicant: Taiwan Semiconductor Manufacturing CO., LTD.
    Inventors: Tain-Shang Chang, Chia-Han Lai, Ren-Hau Yu, Ching-Yao Sun, Yu-Sheng Wang