Abstract: When being connected to a macro cell (S-MeNB) and a small cell (SeNB), a user equipment device performs a pre-handover process of disconnecting the connection with the SeNB before a handover process of switching a macro cell connected with the UE from the macro cell (S-MeNB) that is a moving source to a macro cell (T-MeNB) that is a moving destination along with moving of the UE, and after the handover process, performs a post-handover process of reestablishing the connection with the SeNB.

Abstract: An overboard fall detection unit including: a water environment sensor that is equipped on a ship crewperson and that outputs water environment data around the ship crewperson; an overboard fall detection part that detects an overboard fall of the ship crewperson on the basis of the water environment data; and an overboard fall notification part that transmits a beacon signal that continuously notifies of overboard fall information related to the ship crewperson via one-way communication.

Abstract: Semiconductor devices whose current characteristics can be prevented from varying even if a phase shift mask is used for patterning gate electrodes of MISFETs, and a manufacturing method thereof are disclosed. According to one aspect of the present invention, there is provided a semiconductor device comprising a first transistor including a first gate electrode provided above a semiconductor substrate, and a first source and a first drain provided in the semiconductor substrate, a second transistor arranged to be adjacent to the first transistor, and including a second gate electrode provided above the semiconductor substrate in parallel with the first gate electrode, and a second source and a second drain provided in the semiconductor substrate, and a third gate electrode provided between the first transistor and the second transistor and in parallel with the first and second gate electrodes.

Abstract: Semiconductor devices whose current characteristics can be prevented from varying even if a phase shift mask is used for patterning gate electrodes of MISFETs, and a manufacturing method thereof are disclosed. According to one aspect of the present invention, there is provided a semiconductor device comprising a first transistor including a first gate electrode provided above a semiconductor substrate, and a first source and a first drain provided in the semiconductor substrate, a second transistor arranged to be adjacent to the first transistor, and including a second gate electrode provided above the semiconductor substrate in parallel with the first gate electrode, and a second source and a second drain provided in the semiconductor substrate, and a third gate electrode provided between the first transistor and the second transistor and in parallel with the first and second gate electrodes.