Abstract: An object is to appropriately detect various activities of a detection target. An electronic device transmits information characterizing the activity of a detection target, and an activity detection device acquires, from its sensor section, a sensing motion signal that is motion information which successively fluctuates in accordance with motions of the detection target as first information. The activity detection device also acquires, from the electronic device, the information characterizing the activity of the detection target as second information, and identifies the type of the activity of the detection target by using the acquired first and second information.

Abstract: A central transmits, to a peripheral connected with the central, re-connection information indicating a timing of a re-connection after a disconnection. Subsequently, the central executes a connection discontinuing process based on the re-connection information. In addition, the central controls power supply for wireless communication at a timing determined based on the re-connection information. Thereafter, the central executes a re-connection process with the peripheral based on the re-connection information shared therewith prior to the disconnection.

Abstract: A communication system includes a first electronic device and at least one second electronic device. The second electronic device has a communication function section having a function for performing communication and an identification image presentation section which provides, at a position that can be captured from outside, an identification image having device information including the type of a communication standard for the communication to be performed by the communication function section. The first electronic device has a control section and a display section, and the control section acquires the device information from a captured image of the identification image, and causes a combination image that is a combination of an image of the second electronic device and image information correspond to the device information to be displayed on the display section.

Abstract: A communication system includes a first electronic device and at least one second electronic device. The second electronic device has a communication function section having a function for performing communication and an identification image presentation section which provides, at a position that can be captured from outside, an identification image having device information including the type of a communication standard for the communication to be performed by the communication function section. The first electronic device has a control section and a display section, and the control section acquires the device information from a captured image of the identification image, and causes a combination image that is a combination of an image of the second electronic device and image information correspond to the device information to be displayed on the display section.

Abstract: A central transmits, to a peripheral connected with the central, re-connection information indicating a timing of a re-connection after a disconnection. Subsequently, the central executes a connection discontinuing process based on the re-connection information. In addition, the central controls power supply for wireless communication at a timing determined based on the re-connection information. Thereafter, the central executes a re-connection process with the peripheral based on the re-connection information shared therewith prior to the disconnection.

Abstract: An information notification apparatus includes a schedule storage unit which stores schedule data, a special schedule determining unit which determines special schedule data in the schedule data stored in the schedule storage unit, and a special schedule notification unit which notifies a communication terminal of the special schedule data determined by the special schedule determining unit.

Abstract: A low dielectric constant film/wiring line stack structure made up of a stack of low dielectric constant films and wiring lines is provided in a region on the upper surface of the semiconductor substrate except for the peripheral part of this surface. The peripheral side surface of the low dielectric constant film/wiring line stack structure is covered with a sealing film. This provides a structure in which the low dielectric constant films do not easily come off. In this case, a lower protective film is provided on the lower surface of a silicon substrate to protect this lower surface against cracks.

Abstract: An opening is formed in a part of a rear protective film corresponding to the center of a dicing street by laser processing which applies a laser beam. The rear protective film is formed on the lower surface of a semiconductor wafer, and made of a resin. By using a resin cutting blade, parts of a sealing film and the upper side of the semiconductor wafer corresponding to the dicing street and both its sides are then cut to form a trench. By using a silicon cutting blade, parts of the semiconductor wafer and the rear protective film corresponding to the dicing street are then cut. In this case, cutting of the rear protective film with the silicon cutting blade is reduced by the opening.

Abstract: In this manufacturing method of a semiconductor device, after a sealing film is applied over an entire surface of a semiconductor wafer and hardened, a second groove for forming a side-section protective film is formed in the sealing film and on the top surface side of the semiconductor wafer. In other words, the sealing film is formed in a state where a groove that causes strength reduction has not been formed on the top surface side of the semiconductor wafer. Since the second groove is formed on the top surface side of the semiconductor wafer after the sealing film is formed, the semiconductor wafer is less likely to warp when the sealing film, made of liquid resin, is hardened.

Abstract: First, a trench is formed in parts of a semiconductor wafer, a sealing film and other elements corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entire workpiece including the separated silicon substrates from being easily warped.

Abstract: First, a trench formed in parts of a semiconductor wafer, a sealing film and others corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entirety including the separated silicon substrates from being easily warped.

Abstract: First, a trench is formed in parts of a semiconductor wafer, a sealing film and other elements corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entire workpiece including the separated silicon substrates from being easily warped.

Abstract: A low dielectric constant film/wiring line stack structure made up of a stack of low dielectric constant films and wiring lines is provided in a region on the upper surface of the semiconductor substrate except for the peripheral part of this surface. The peripheral side surface of the low dielectric constant film/wiring line stack structure is covered with a sealing film. This provides a structure in which the low dielectric constant films do not easily come off. In this case, a lower protective film is provided on the lower surface of a silicon substrate to protect this lower surface against cracks.