Abstract: A semiconductor storage device includes: a substrate; a stacked body; a columnar body; and a single-crystalline body. The stacked body includes a cell array region where first insulating layers and conductive layers are alternately stacked. The columnar body has a first columnar body. The first columnar body includes a semiconductor body and a charge accumulation film provided between one of a plurality of the conductive layers and the semiconductor body, and is present in the cell array region. The conductive layer that surrounds an outer periphery of the single-crystalline body and that is closest to the substrate among the conductive layers is a first layer, and that the conductive layer that surrounds an outer periphery of the first columnar body and that is closest to the substrate among the conductive layers is a second layer.

Abstract: A semiconductor storage device includes: a substrate; a stacked body; a columnar body; and a single-crystalline body. The stacked body is stacked on the substrate. The columnar body extends in a first direction crossing the substrate in the stacked boy. The single-crystalline body projects from the substrate into the columnar body and lies between the columnar body and the substrate. The stacked body includes a cell array region where first insulating layers and conductive layers are alternately stacked. The columnar body has a first columnar body. The first columnar body includes a semiconductor body and a charge accumulation film provided between one of a plurality of the conductive layers and the semiconductor body, and is present in the cell array region.

Abstract: The present invention provides an oil separator that can improve oil separation performance with a simple structure. An oil separator includes a casing that has an inlet and an outlet and the oil separator is configured to separate oil contained in blow-by gas in the casing. The casing includes therein multiple staggered partition walls to form a gas passage through which the blow-by gas flows in a meandering manner in a horizontal direction from the inlet to the outlet, and a filter element that partially closes the gas passage and crosses the partition walls.

Abstract: A lubricating oil discharge and filling structure of an oil pan including a cylindrical lubricating oil amount adjustment wall vertically provided from a bottom surface of the oil pan, and having a lubricating oil amount adjustment passage communicating with an outside of the oil pan, formed on an inner periphery. The lubricating oil amount adjustment wall has a lubricating oil discharge hole formed in a lower part, to the lubricating oil amount adjustment passage, a cylindrical lubricating oil amount adjustment plug in which a communication hole that communicates with the lubricating oil amount adjustment passage is formed is assembled movably along the lubricating oil amount adjustment passage. The lubricating oil amount adjustment plug includes a screw portion that screws into a screw groove formed in the lubricating oil amount adjustment passage, and a sealing wall that seals discharge of the lubricating oil from the lubricating oil discharge hole.

Abstract: Provided is a display apparatus capable of having excellent yield. This display apparatus is provided with: a light source that outputs light for lighting a liquid crystal display element; an optical element (a first light collecting lens or the like) that is disposed on an optical axis of the light source, said optical element being disposed between the light source and the liquid crystal display element; and a case body that houses the optical element. The case body has: an upper opening opened toward the Z axis direction; a bottom section that is positioned on the opposite side to the upper opening in the Z axis direction; and a groove section (a groove section or the like), which is positioned between the upper opening and the bottom section, extends in the Z axis direction, and is recessed in the X axis direction.

Abstract: The present invention provides an oil separator that can improve oil separation performance with a simple structure. An oil separator 10 includes a casing 15 that has an inlet 11 and an outlet 12 and the oil separator 10 is configured to separate oil contained in blow-by gas 2 in the casing 15. The casing 15 includes therein multiple staggered partition walls 25, 35 to form a gas passage 40 through which the blow-by gas 2 flows in a meandering manner in a horizontal direction from the inlet 11 to the outlet 12, and a filter element 50 that partially closes the gas passage 40 and crosses the partition walls 25.

Abstract: A method for forming a light emitting diode (LED) assembly with a reflective contact and an LED assembly formed by the method is disclosed. In one embodiment, the method includes forming an LED on a surface of a substrate, the LED comprising a light emitting layer disposed between a first layer comprising a compound semiconductive material having a first conductivity type, and a second layer comprising the compound semiconductive material having a second conductivity type, the compound semiconductive material comprising a group III element and a group V element. The method further includes forming an oxidized region extending inwards of a surface of the first layer opposite the second layer. In one embodiment, the oxidized region is formed by oxygen (O2) plasma ashing the surface of the first layer.

Abstract: Provided is a display apparatus capable of having excellent yield. This display apparatus is provided with: a light source that outputs light for lighting a liquid crystal display element; an optical element (a first light collecting lens or the like) that is disposed on an optical axis of the light source, said optical element being disposed between the light source and the liquid crystal display element; and a case body that houses the optical element. The case body has: an upper opening opened toward the Z axis direction; a bottom section that is positioned on the opposite side to the upper opening in the Z axis direction; and a groove section (a groove section or the like), which is positioned between the upper opening and the bottom section, extends in the Z axis direction, and is recessed in the X axis direction.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting portion, a first transparent conductive layer, and a second transparent conductive layer. The light emitting portion is provided between the first and second semiconductor layers. The second semiconductor layer is disposed between the first transparent conductive layer and the light emitting portion. The first transparent conductive layer includes oxygen. The second transparent conductive layer is provided between the second semiconductor layer and the first transparent conductive layer. The second transparent conductive layer has a refractive index higher than a refractive index of the first transparent conductive layer, and includes oxygen at a concentration higher than a concentration of oxygen included in the first transparent conductive layer.

Abstract: A filter element includes a filter member provided with a plurality of pleat portions and a frame body holding an outer peripheral portion of the filter member. The frame body is provided with a comb-shaped portion having a comb-tooth portion which is inserted into adjacent pleat portions and contacts to a surface of the filter member, and the comb-shaped member is formed by an insert-molding process.

Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, and a second electrode. The stacked structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting portion. The stacked structural body has a first major surface on a side of the second semiconductor layer. The first electrode is provided on the first semiconductor. The second electrode is provided on the second semiconductor layer. The first electrode includes a first pad portion and a first extending portion that extends from the first pad portion along a first extending direction. The first extending portion includes a first width-increasing portion. A width of the first width-increasing portion along a direction orthogonal to the first extending direction is increased from the first pad portion toward an end of the first extending portion.

Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting element. The method can include bonding a stacked main body of a structural body to a substrate main body. The structural body includes a growth substrate and the stacked main body provided on the growth substrate. The stacked main body includes a first nitride semiconductor film, a light emitting film provided on the first nitride semiconductor film, and a second nitride semiconductor film provided on the light emitting film. The method can include removing the growth substrate. The method can include forming a plurality of stacked bodies. The method can include forming an uneven portion in a surface of a first nitride semiconductor layer. The method can include forming a plurality of the semiconductor light emitting elements.

Abstract: According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.

Abstract: According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first, a second and a third conductive layer. The stacked structural body includes first and second semiconductors and a light emitting layer provided therebetween. The second semiconductor layer is disposed between the first conductive layer and the light emitting layer. The first conductive layer is transparent. The first conductive layer has a first major surface on a side opposite to the second semiconductor layer. The second conductive layer is in contact with the first major surface. The third conductive layer is in contact with the first major surface and has a reflectance higher than a reflectance of the second conductive layer. The third conductive layer includes an extending part extending in parallel to the first major surface. At least a portion of the extending part is not covered by the second conductive layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer.

Abstract: A filter element includes a filter member provided with a plurality of pleat portions and a frame body holding an outer peripheral portion of the filter member. The frame body is provided with a comb-shaped portion having a comb-tooth portion which is inserted into adjacent pleat portions and contacts to a surface of the filter member, and the comb-shaped member is formed by an insert-molding process.

Abstract: According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.