Abstract: A semiconductor memory device comprises a substrate including a first source/drain region and a second source/drain region, a trench between the first source/drain region and the second source/drain region and formed in the substrate, a cell gate insulating layer on sidewalls and a bottom surface of the trench, a cell gate electrode on the cell gate insulating layer, a work function control pattern on the cell gate electrode, including N-type impurities and a cell gate capping pattern on the work function control pattern. The work function control pattern includes a semiconductor material. The work function control pattern includes a first region and a second region between the first region and the cell gate electrode. A concentration of the N-type impurities in the first region is greater than a concentration of the N-type impurities in the second region.

Abstract: A memory device includes: a substrate including a first active region and a second active region spaced apart from each other; a device isolation film on the substrate, the device isolation film defining the first active region and the second active region; and a buried word line structure passing a low dielectric region between the first active region and the second active region, wherein the buried word line structure includes a gate electrode in a gate trench and a gate insulating layer between a portion of the gate electrode outside the low dielectric region and the gate trench, and wherein an air gap is disposed between a portion of the gate electrode within the low dielectric region and the gate trench.

Abstract: Disclosed are a solar cell and a method for manufacturing the same. The solar cell comprises asymmetric nanowires each of which has an angled sidewall, and thus incident light can be concentrated at a p-n junction portion by means of a total reflection phenomenon of light caused by the difference between the refractive indices of a semiconductor layer and a transparent electrode layer, and light absorption may increase due to an increase in the light travel distance, thus improving photoelectric efficiency. Further, the method for manufacturing the solar cell involves etching a substrate and integrally forming the substrate and a p-type semiconductor layer including the asymmetric nanowires each of which has the angled sidewalls, thereby enabling reduced manufacturing costs and simple and easy manufacture of the nanowires having the angled sidewalls.

Abstract: The present invention provides a nanowire sensor comprising nanowires, in which the nanowires are stacked to form a three-dimensional structure so that they have a large exposed surface area compared to that of a conventional straight nanowire sensor in the same limited area, thereby increasing the probability of attachment of a target material to the nanowires to thereby increase the measurement sensitivity of the sensor. Thus, a change in the electrical conductivity (conductance or resistance) of the nanowires can be sensed with higher sensitivity, suggesting that the sensor has increased sensitivity.

Abstract: The present invention provides a nanowire sensor comprising nanowires, in which the nanowires are stacked to form a three-dimensional structure so that they have a large exposed surface area compared to that of a conventional straight nanowire sensor in the same limited area, thereby increasing the probability of attachment of a target material to the nanowires to thereby increase the measurement sensitivity of the sensor. Thus, a change in the electrical conductivity (conductance or resistance) of the nanowires can be sensed with higher sensitivity, suggesting that the sensor has increased sensitivity.

Abstract: A nanowire sensor having a nanowire in a network structure includes: source and drain electrodes formed over a substrate; a nanowire formed between the source and drain electrodes and having a network structure in which patterns of intersections are repeated; and a detection material fixed to the nanowire and selectively reacting with a target material introduced from outside.

Abstract: Disclosed are a solar cell and a method for manufacturing the same. The solar cell comprises asymmetric nanowires each of which has an angled sidewall, and thus incident light can be concentrated at a p-n junction portion by means of a total reflection phenomenon of light caused by the difference between the refractive indices of a semiconductor layer and a transparent electrode layer, and light absorption may increase due to an increase in the light travel distance, thus improving photoelectric efficiency. Further, the method for manufacturing the solar cell involves etching a substrate and integrally forming the substrate and a p-type semiconductor layer including the asymmetric nanowires each of which has the angled sidewalls, thereby enabling reduced manufacturing costs and simple and easy manufacture of the nanowires having the angled sidewalls.

Abstract: A nanowire sensor having a nanowire in a network structure includes: source and drain electrodes formed over a substrate; a nanowire formed between the source and drain electrodes and having a network structure in which patterns of intersections are repeated; and a detection material fixed to the nanowire and selectively reacting with a target material introduced from outside.