Abstract: Some embodiments relate to a silicon controlled rectifier (SCR) that includes a current path which couples an SCR anode to an SCR cathode. The current path includes a first vertical current path component coupled to the SCR anode, and a second vertical current path component coupled to the SCR cathode. A horizontal current path component includes a first well region and a second well region that meet at a junction lying along a first plane. The first and second well regions cooperatively span a distance between the first and second vertical current path components. The first and second vertical current path components mirror one another symmetrically about the first plane.

Abstract: Provided is a physical vapor deposition apparatus with one or multiple deposition chambers for depositing films on substrates. The deposition chambers includes a heater and various cooling features to cool the chamber, the heater and the substrate. The sidewalls and top of the chamber are cooled by a cooling feature. The heater includes a cooling plate. A fitted heated cover is disposed between the heater and the substrate. A cooling pipe delivers a coolant throughout the cooling plate and extends in a high spatial density throughout the surface of the cooling plate. The cooling pipe occupies an area of about 14-20% of the area of the cooling plate and no location on the cooling plate surface is greater than about 15-20 mm from the cooling pipe. The cooling pipe cools the heater rapidly and enables deposition operations of long duration and using high power to be carried out.

Abstract: A semiconductor substructure with an improved source/drain structure is described. The semiconductor substructure can include an upper surface; a gate structure formed over the substrate; a spacer formed along a sidewall of the gate structure; and a source/drain structure disposed adjacent the gate structure. The source/drain structure is disposed over or on a recess surface of a recess that extends below said upper surface. The source/drain structure includes a first epitaxial layer, having a first composition, over or on the interface surface, and a subsequent epitaxial layer, having a subsequent composition, over or on the first epitaxial layer. A dopant concentration of the subsequent composition is greater than a dopant concentration of the first composition, and a carbon concentration of the first composition ranges from 0 to 1.4 at.-%. Methods of making semiconductor substructures including improved source/drain structures are also described.

Abstract: A method for fabricating a semiconductor device is disclosed. A first substrate is arranged over a second substrate. A wafer bonding process is performed on the semiconductor device. First regions of the device are enclosed by the bonding process. Second regions of the device remain exposed. One or more processes are performed on the exposed second regions, after performing the wafer bonding process. The one or more processes include a fill process that forms a fill material within the exposed second regions. An edge seal material is applied on the first and second substrates after performing the one or more processes.

Abstract: A semiconductor substructure with improved performance and a method of forming the same is described. The semiconductor substructure includes a dielectric film over a substrate, the dielectric film including at least one metal dielectric layer, at least one oxygen-donor layer, and at least one nitride-incorporation layer.

Abstract: A polishing pad for polishing a substrate. The pad comprises a layer of material having an upper polishing surface and a lower surface interfacing with a proximate platen, the material comprising a mixture of a conductive polymer distributed in a structure of a dielectric polymeric material using predetermined relationships. Additional embodiments provide a pad having a layer of dielectric polymeric material with an upper polishing surface and a lower surface interfacing with a proximate platen. A first set of grooves filled with a conductive polymer extends from the upper polishing surface to the lower surface, the first set of grooves filled with a conductive polymer. A second set of shallower grooves provide for slurry flow over the upper polishing surface. The first and/or second set of grooves are provided in a predetermined pattern.

Abstract: A system and method is disclosed for a quality control and/or inspection procedure for assembly line processes. The disclosed system and method enable automatic optical inspection of a device during different stages of manufacture as well as in its finished form. The disclosed system and method enable the automatic quality control process to be self-learning, dynamic, and to identify and classify defects in real time.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a buffer layer on a substrate, an graded aluminum gallium nitride (AlGaN) layer disposed on the buffer layer, a gallium nitride (GaN) layer disposed on the graded AlGaN layer, a second AlGaN layer disposed on the GaN layer and a gate stack disposed on the second AlGaN layer. The gate stack includes one or more of a III-V compound p-doped layer, a III-V compound n-doped layer, an aluminum nitride (AlN) layer between the III-V compound p-doped and n-doped layers, and a metal layer formed over the p-doped, AlN, and n-doped layers. A dielectric layer can also underlie the metal layer.

Abstract: The present disclosure is directed to a method of manufacturing a semiconductor structure in which a low-k dielectric layer is formed over a semiconductor substrate. Features can be formed proximate to the low-k dielectric layer by plasma etching with a plasma formed of a mixture of a CO2, CO, or carboxyl-containing source gas and a fluorine-containing source gas. The method allows for formation of damascene structures without encountering the problems associated with damage to a low-K dielectric layer.

Abstract: The present disclosure is directed to an apparatus and method for manufacture thereof. The apparatus includes a first passive substrate bonded to a second active substrate by a conductive metal interface. The conductive metal interface allows for integration of different function devices at a wafer level.

Abstract: An apparatus for extending the useful life of an ion source, comprising an arc chamber containing a plurality of cathodes to be used sequentially and a plurality of repellers to protect cathodes when not in use. The arc chamber includes an arc chamber housing defining a reaction cavity, gas injection openings, a plurality of cathodes, and at least one repeller element. A method for extending the useful life of an ion source includes providing power to a first cathode of an arc chamber in an ion source, operating the first cathode, detecting a failure or degradation in performance of the first cathode, energizing a second cathode, and continuing operation of the arc chamber with the second cathode.

Abstract: A high speed level shifter is provided for converting a low input voltage into a wide-range high output voltage. By utilizing two switching units to improve the latching speed of the latching unit of the level shifter, the duty cycle of the input signal is nearly equal to the duty cycle of the output signal.

Abstract: A method includes receiving a first voltage at a first input circuit of a bi-directional charge pump circuit, selectively turning on a first switch of a switching circuit that is coupled electrically to a deep N-well transistor of a first set of one or more intermediate pump stages that are coupled between the first input circuit and a first output circuit, and providing a third voltage from the first output circuit in response to receiving a second voltage at an input of a first diode of the output circuit from the first set of the one or more intermediate pump stages.

Abstract: A DC converter is provided for converting a first supply voltage into a second supply voltage. The first supply voltage is higher than the second supply voltage. The DC converter includes a driving stage and an output stage. The driving stage includes a modulation circuit, a pull-up driving unit, a pull-up unit, a pull-down driving unit, and a pull-down unit. The modulation circuit generates a control signal according to the second supply voltage. The pull-up driving unit generates a first P-type driving signal and a second P-type driving signal to the pull-up unit according to the control signal. The pull-down driving unit generates a first N-type driving signal and a second N-type driving signal to the pull-down unit according to the control signal.

Abstract: A method and apparatus for controlling a silicon nitride etching bath provides the etching bath including phosphoric acid heated to an elevated temperature. The concentration of silicon in the phosphoric acid is controlled to maintain a desired level associated with a desired silicon nitride/silicon oxide etch selectivity. Silicon concentration is measured while the silicon remains in soluble form and prior to silica precipitation. Responsive to the measuring, fresh heated phosphoric acid is added to the etching bath when necessary to maintain the desired concentration and silicon nitride:silicon oxide etch selectivity and prevent silica precipitation. The addition of fresh heated phosphoric acid enables the etching bath to remain at a steady state temperature. Atomic absorption spectroscopy may be used to monitor the silicon concentration which may be obtained by diluting a sample of phosphoric acid with cold deionized water and measuring before silica precipitation occurs.

Abstract: A high-speed bus interface with an adaptive swing driver. A high speed interface includes a transmitter and a receiver coupled via a bus. The transmitter has an adaptive swing driver and a voltage-regulating-module (VRM). The adaptive swing driver includes a post-driver and a pre-driver. The post-driver provides an adaptive swing output with a dedicated adaptive voltage power supply (VDDQ) and transition emphasis driving capacity with an internal logic voltage supply (VDD). The pre-driver provides the transition emphasis driving capacity with a pull-up and a pull-down signal path to the post-driver. The voltage-regulating-module is configured to supply signal to the adaptive swing driver. The receiver includes a comparator and a bit-error-rate detector. The comparator amplifies the adaptive swing output received from the transmitter via a bus, while the bit-error-rate detector diagnoses the amplified adaptive swing output received from the comparator.

Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.

Abstract: A gated voltage-controlled oscillator receives a gating signal and outputs an oscillating signal having a frequency corresponding to the gating signal. The gated voltage-controlled oscillator includes a delay unit, having a first terminal and a second terminal, and a multiplexer, having a first input terminal, a second input terminal, a select terminal and an output terminal. The first input terminal and the select terminal are coupled to the gating signal. The second input terminal is coupled to the first terminal of the delay unit. The output terminal outputs the oscillating signal and is coupled to the second terminal of the delay unit. The delay unit delays the oscillating signal and outputs the delayed oscillating signal into the second input terminal. The multiplexer outputs a signal of the first input terminal or the second input terminal according to the gating signal.

Abstract: A system comprises a processor-implemented tool configured to generate a layout of an integrated circuit (IC) die. At least one non-transitory machine readable storage medium includes a first portion encoded with a first gate-level description of first and second circuit patterns to be formed on first and second integrated circuit (IC) dies, respectively, and a second portion encoded with a second gate level description of the first and second circuit patterns received from the processor implemented tool. The second gate level description includes power and ground ports, and the first gate level description does not include power and ground ports. A processor-implemented first verification module is provided for comparing the first and second gate level descriptions and outputting a verified second gate-level description of the first and second circuit patterns.

Abstract: A memory macro comprises a plurality of memory array segments, each having a predetermined number of data inputs and outputs. A segment decoder circuit is configured to: receive a first value indicating a number of memory partitions among which the memory array segments are to be divided, and output a plurality of signals for selectively activating one or more of the plurality of memory array segments to be accessed based on the first value. A plurality of output drivers are coupled to the segment decoder circuit and to respective ones of the outputs. The plurality of output drivers are configured to selectively output data from the respective outputs of each of the respective activated memory array segments.