Patents by Inventor TAIWAN SEMICONDUCTOR MANUFACTURING MOMPANY, LTD.

TAIWAN SEMICONDUCTOR MANUFACTURING MOMPANY, LTD. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF MAKING A SEMICONDUCTOR DEVICE USING A BOTTOM ANTIREFLECTIVE COATING (BARC) LAYER
    Publication number: 20140145313
    Abstract: This description relates to a method of making a semiconductor device including forming an inter-level dielectric (ILD) layer over a substrate and forming a layer set over the ILD layer. The method further includes etching the layer set to form a tapered opening in the layer set and etching the ILD layer using the layer set as a mask to form an opening in the ILD layer. The opening in the ILD layer has a line width roughness (LWR) of less than 3 nanometers (nm). This description also relates to a semiconductor device including an inter-level dielectric (ILD) layer over a substrate; and a layer set over the ILD layer. The layer set has a tapered opening within the layer set. Etching the layer set comprises forming the tapered opening having sidewalls at an angle with respect to a top surface of the ILD layer ranging from 85-degrees to 90-degrees.
    Type: Application
    Filed: November 27, 2012
    Publication date: May 29, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventor: TAIWAN SEMICONDUCTOR MANUFACTURING MOMPANY, LTD.