Abstract: Provided is a circuit apparatus including a power conversion circuit and a transmission apparatus, the transmission apparatus transmitting a signal from the power conversion circuit, the power conversion circuit having an alarm signal generation unit which generates an alarm signal indicating whether the power conversion circuit is in a preset state, and a state signal generation unit which generates a state signal having an amplitude different from that of the alarm signal and indicating a state of the power conversion circuit. The power conversion circuit may further have an output terminal which outputs an output signal in which the alarm signal and the state signal are superimposed.

Abstract: Provided is a delay circuit which delays a control signal and outputs the control signal to a gate drive circuit of a semiconductor device, the delay circuit includes a delay unit which delays the control signal such that a time lag between a timing of change in the control signal and a timing of change in a drive signal supplied from the gate drive circuit to a gate of the semiconductor device is brought closer a predetermined reference period.

Abstract: An integrated circuit, including: a first current source; a second current source provided in parallel to the first current source; a first resistor with one end coupled to an output of the first current source; a first bipolar transistor that is diode-connected and is coupled to the other end of the first resistor; a second bipolar transistor that is diode-connected and is coupled to an output of the second current source; a second resistor coupled to the second bipolar transistor; and an output circuit configured to output a voltage based on a first voltage outputted from the first current source and a second voltage outputted from the second current source.

Abstract: An integrated circuit, including: a first current source; a second current source provided in parallel to the first current source; a first resistor with one end coupled to an output of the first current source; a first bipolar transistor that is diode-connected and is coupled to the other end of the first resistor; a second bipolar transistor that is diode-connected and is coupled to an output of the second current source; a second resistor coupled to the second bipolar transistor; and an output circuit configured to output a voltage based on a first voltage outputted from the first current source and a second voltage outputted from the second current source.

Abstract: A semiconductor module with temperature characteristics adjustable through a measurement device. The semiconductor module includes a mounting board having a semiconductor chip and an integrated circuit mounted thereon. The semiconductor chip includes a switching device and a diode for temperature detection, a forward voltage of the diode being measurable by the measurement device. The integrated circuit includes a correction circuit configured to generate a corrected reference voltage, and a control circuit configured to receive the corrected reference voltage and a drive signal, and to control switching of the switching device based on the corrected reference voltage and the drive signal. The mounting board includes a pad configured to be coupled to the diode with a wire, and the pad has an area larger than a sum of a first area to be coupled to the wire and a second area to be in contact with the probe of the measurement device for measuring the forward voltage.