Abstract: The substance has a composition of a general chemical formula ofBi.sub.2 -(Sr.sub.2 Ca.sub.1).sub.1-x (La.sub.2 Y.sub.1).sub.x -Cu.sub.y -O.sub.z,where 0.4.ltoreq.x.ltoreq.1, y=2 and z=9-10.5, wherein the substance is an insulator or a semiconductor in the dark, and has a photoconductivity Q(.lambda.,T) in conjugate with superconductivity of a superconductor of an adjacent component of the Bi-SrCa-LaY-Cu-O system at and below a critical temperature (T) of less than 105.degree.-115.degree. K. and below 65.degree.-85.degree. K. at photoexcitation in an optical wavelength range (.lambda.) of 420-670 nm. The present invention relates to a method for producing the same and a superconductive optoelectronic device by using the same. The present invention also relates to an organized integration of the element or device into an apparatus to further develop a new field of "Superconductive Optoelectronics.

Abstract: The disclosed oxide has a general chemical formula of Ca.sub.X-x)-Sr.sub.x -Bi.sub.(Y-y)-Cu.sub.y -O.sub.x X being 2 to 3, 0.ltoreq.x<1, Y being 3 to 4, 0<y.ltoreq.2, and z being 4 to 9, and the oxide shows, at a temperature below 105 to 115 K, both a photoconductivity and an either real or potential superconductivity, namely, "superconductive photoconductivity" in a wavelength range of 530 to 740 nm.The oxide is made by heating a mixture of starting materials for the above composition of Ca.sub.X-x -Sr.sub.x -Bi.sub.Y-y -Cu.sub.y -O.sub.z at 700.degree.-850.degree. C. for 2-10 hours so as to effect primary sintering for causing solid phase reactions in the mixture, cooling gradually, shaping under pressure, reheating the shaped materials at 750.degree.-880.degree. C. for 2-10 hours so as to effect secondary sintering thereon, cooling, keeping the reheated materials at 500.degree.-600.degree. C. for 2-3 hours and cooling the same either extremely quickly at a rate of 1500-900.degree. C.

Abstract: The disclosed superconductive optoelectronic device with the basic substance Bi.sub.2 O.sub.3 or Bi.sub.2 O.sub.3 ;M.sup.2+ (M=Ca,Sr,Cu) of superconductive-conjugate photoconductivity has a substrate, a photoconductive gate region formed on the substrate, and a source region and a drain region formed on the substrate at opposite sides of the gate region so as to face toward each other across the gate region. The source region and the drain region are made of a Bi-based superconductive material. The gate region is made of such the basic material Bi.sub.2 O.sub.3 or Bi.sub.2 O.sub.3 ;M.sup.2+ (M=Ca,Sr,Cu) of superconductive-conjugate photoconductivity, which reveals photoconductivity at a temperature below the transition temperature of the above relevant Bi-based superconductive material. Also disclosed are superconductive optoelectronic devices formed of an organized integration of the above superconductive optoelectronic devices to develop effectively a new field of "Superconductive Optoelectronics".

Abstract: The disclosed substance has a composition of a general chemical formula ofBi.sub.2 -(Sr.sub.2 Ca.sub.1).sub.1-x (La.sub.2 Y.sub.1).sub.x -Cu.sub.y -O.sub.z,where 0.4.ltoreq.x.ltoreq.1, y=2 and z=9-10.5, wherein said substance is an insulator or a semiconductor in the dark, and has a photoconductivity Q(.lambda.,T) in conjugate with superconductivity of a superconductor of an adjacent component of the Bi-SrCa-LaY-Cu-O system at and below a critical temperature (T) of less than 105-115K and below 65-85K at photoexcitation in an optical wavelength range (.lambda.) of 420-670 nm. The present invention relates to a method for producing the same and a superconductive optoelectronic device by using the same. The present invention also relates to an organized integration of the element or device into an apparatus to further develop a new field of "Superconductive Optoelectronics.

Abstract: The disclosed oxide has a general chemical formula of Ba-Pb.sub.1-x -Bi.sub.x -O.sub.z, x being 0.35 to 1 and z being 2.7 to 3, and the oxide shows a potential superconductivity at a temperature below 14K and a photoconductivity at a temperatures below 160K at least in an exciting wavelength range of 500 to 700 nm depending on the value of the above x.The oxide is made by heating a mixture of starting materials for the desired composition at 750-850.degree. C. for 2-10 hours so as to cause solid phase reaction in the mixture, cooling the heated materials gradually, shaping the cooled mixture under pressure, reheating the shaped materials at 500-850.degree. C. for 2-10 hours so as to effect secondary sintering thereon, keeping the reheated materials at 600-500.degree. C. for 2-3 hours and cooling the same either extremely quickly at a rate of 1500-900.degree. C./sec or slowly at a rate of 150-200.degree. C./hour.

Abstract: The disclosed superconductive optoelectronic device stems from the inventor's important discovery of a phenomenon that the basic substance Cu.sub.2 O reveals photoconductivity below several temperatures T.sub.ps in steps thereof, T.sub.ps being comparable with a series of the critical temperatures of superconductivity T.sub.sc of relevant Cu-based superconductors, and such photoconductivity of the basic substance is in a conjugate relationship with the superconductivity of the above Cu-based superconductors. The device of the invention has a gate region made of the above basic substance Cu.sub.2 O and a source region and a drain region made of the above Cu-based superconductors, the source and drain regions connected to each other, so that electric current therebetween at a temperature below the step temperature T.sub.ps of the basic substance is switched and/or controlled by the incident light intensity illuminated to the gate region.

Abstract: The disclosed substance has a general chemical formula of La.sub.2 -Cu.sub.1 -O.sub.z, z being 3.84 to 4.00. The disclosed substance shows, at a temperature below 20.degree. K., superconductivity, either potential or real, and the substance also shows, at a temperature below 30.degree. K., superconductive photoconductivity in response to incident exciting light in a wavelength range of 420 to 640 nm. The substance is produced by heating a mixture of starting material therefor at 900.degree.-1,050.degree. C. for 5-10 hours to cause solid state reaction, cooling gradually, shaping under pressure, re-sintering at 700.degree.-1,200.degree. C., and cooling either quickly at a rate of 2,000.degree.-900.degree. C./sec or slowly at a rate of 150.degree.-200.degree. C./hour.

Abstract: The disclosed substance has a general chemical formula of Y.sub.3-x -Ba.sub.x -Cu.sub.y -O.sub.z, x being 0 to 2, y being 3 to 6, and z being 6 to 12 (but excluding compositions with x=2, y=3 and z=6.75-6.97). At a temperature below 90-95 K, the disclosed substance shows superconductive photoconductivity or even both superconductivity, either real or potential, and photoconductivity in response to incident exciting light in a wavelength range of 420 to 640 nm. The substance is produced by heating a mixture of starting material therefor at 750.degree.-1,050.degree. C. for 1-10 hours so as to cause solid phase reaction, cooling gradually, shaping under pressure, sintering at 670.degree.-1,050.degree. C., and cooling either quickly at a rate of 2,000.degree.-900.degree. C./sec or slowly at a rate of 150.degree.-200.degree. C./hour.

Abstract: The disclosed substance has a general chemical formula of Y.sub.3-x --Ba.sub.x Cu.sub.y --O.sub.z, x being 0 to 1, y being 3 to 6, and z being 6 to 12. At a temperature below 90.degree.-95.degree. K., the disclosed substance shows superconductive photoconductivity or even both superconductivity, either real or potential, and photoconductivity in response to incident exciting light in a wavelength range of 420 to 640 nm. The substance is produced by heating a mixture of starting material therefor at 750.degree.-1,050.degree. C. for 1-10 hours so as to cause solid phase reaction, cooling gradually, shaping under pressure, sintering at 670.degree.-1,050.degree. C., and cooling either quickly at a rate of 2,000.degree.-900.degree. C./sec or slowly at a rate of 150.degree.-200.degree. C./hour.

Abstract: The disclosed superconductive optoelectronic device has a substrate, a photoconductive gate region formed on the substrate, and a source region and a drain region formed on the substrate at opposite sides of the gate region so as to face toward each other across the gate region. The source region and the drain region are made of a superconductive material. The gate region is made of such superconductive photoconductive-material, which reveals photoconductivity at a temperature below the transition temperature of the above superconductive material and has a similar general chemical formula to that of the above superconductive material except that concentrations of constituent elements are different. Also disclosed are superconductive optoelectronic devices formed of an organized integration of the above superconductive optoelectronic devices to develop a new field of "Superconductive Opto-Electronics".