Patents by Inventor Taizo Ohashi

Taizo Ohashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Surface-treating agent adapted for intermediate products of a semiconductor device
    Patent number: 4339340
    Abstract: A surface-treating agent formed of an aqueous solution containing 0.01 to 20% by weight of trialkyl(hydroxyalkyl) ammonium hydroxide. The treating agent is adapted to be used for the effective removal of organic and inorganic contaminants deposited on the surface of intermediate semiconductor products obtained in the respective steps of manufacturing a semiconductor device and the efficient etching of a metal layer used as wiring. Further, it can be used for the elimination of those portions of a positive working photoresist film coated on the surface of the intermediate semiconductor products which are and are not exposed to a light by controlling its concentration.
    Type: Grant
    Filed: December 5, 1980
    Date of Patent: July 13, 1982
    Assignee: Tokyo Shibaura Electric Co., Ltd.
    Inventors: Hisashi Muraoka, Masafumi Asano, Taizo Ohashi, Yuzo Shimazaki
  • Surface-treating agent adapted for intermediate products of a semiconductor device
    Patent number: 4239661
    Abstract: A surface-treating agent formed of an aqueous solution containing 0.01 to 20% by weight of trialkyl(hydroxyalkyl) ammonium hydroxide. The treating agent is adapted to be used for the effective removal of organic and inorganic contaminants deposited on the surface of intermediate semiconductor products obtained in the respective steps of manufacturing a semiconductor device and the efficient etching of a metal layer used as wiring. Further, it can be used for the elimination of those portions of a positive working photoresist film coated on the surface of the intermediate semiconductor products which are and are not exposed to a light by controlling its concentration.
    Type: Grant
    Filed: July 21, 1978
    Date of Patent: December 16, 1980
    Assignee: Tokyo Shibaura Electric Co., Ltd.
    Inventors: Hisashi Muraoka, Masafumi Asano, Taizo Ohashi, Yuzo Shimazaki
  • Method of etching a semiconductor substrate
    Patent number: 4172005
    Abstract: A method of etching a semiconductor substrate which comprises the steps of selectively mounting an etching mask on the semiconductor substrate and effecting selective etching by an anisotropic etchant comprising an aqueous solution containing 0.1 to 20% by weight of trihydrocarbon-substituted (hydroxyhydrocarbon-substituted) ammonium hydroxide.
    Type: Grant
    Filed: October 20, 1977
    Date of Patent: October 23, 1979
    Assignee: Tokyo Shibaura Electric Co., Ltd.
    Inventors: Hisashi Muraoka, Masafumi Asano, Taizo Ohashi