Abstract: An apparatus for the biological treatment of waste fluid from the coating process is presented in the present invention. Said apparatus comprises a biological treatment vessel filled with carriers immobilizing microorganism useful for the treatment of waste fluid from the coating process, a tank in which said biological treatment vessel is set, a heating means to heat said waste fluid in said tank, a stirrer to stir said waste fluid, an aeration means to blow air into said waste fluid, a filter for filtration of said waste fluid having been treated, and a return pass to return filtrate of said waste fluid to said tank.

Abstract: A copper film coated substrate includes a substrate and a copper film formed on a surface of the substrate. The copper film has an X-ray diffraction intensity of 2.0 cps/nm or more per unit film thickness at a crystal orientation (111) face of the copper film. A crystal orientation of a copper thin film is controlled by irradiating a surface of a substrate with inert gas ions before forming a copper thin film on the substrate by a physical vapor deposition process. A copper thin film is formed by irradiating a surface of a substrate with ions, and depositing a copper thin film on the irradiated substrate. In the ion irradiating step, an ion irradiation energy for a dosage of the irradiated ions is controlled, so that crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of the irradiated ions.

Abstract: A copper film coated substrate includes a substrate and a copper film formed on a surface of the substrate. The copper film has an X-ray diffraction intensity of 2.0 cps per unit film thickness at a crystal orientation (111) face of the copper film. A crystal orientation of a copper thin film is controlled by irradiating a surface of a substrate with inert gas ions before forming a copper thin film on the substrate by a physical vapor deposition process. A copper thin film is formed by irradiating a surface of a substrate with ions, and depositing a copper thin film on the irradiated substrate. In the ion irradiating step, an ion irradiation energy for a dosage of the irradiated ions is controlled, so that crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of the irradiated ions.