Abstract: An image pickup device and a method of the same are described herein. By way of first example, the image pickup device includes a seal member having a first surface, the first surface of the seal member including a concave portion, and an optical device coupled to a second surface of the seal member, the second surface of the seal member being opposite from the first surface of the seal member. By way of a second example, the image pickup device includes a seal member having a first surface, the first surface being a polished surface, and an optical device coupled to a second surface of the seal member, the second surface of the seal member being opposite from the first surface of the seal member.

Abstract: An image pickup device and a method of the same are described herein. By way of first example, the image pickup device includes a seal member having a first surface, the first surface of the seal member including a concave portion, and an optical device coupled to a second surface of the seal member, the second surface of the seal member being opposite from the first surface of the seal member. By way of a second example, the image pickup device includes a seal member having a first surface, the first surface being a polished surface, and an optical device coupled to a second surface of the seal member, the second surface of the seal member being opposite from the first surface of the seal member.

Abstract: A method of manufacturing a semiconductor device includes: forming, on a cover glass, a film having a predetermined specific gravity and configured to shield an alpha ray that arises from the cover glass; and bonding the cover glass on which the film is formed and an image pickup device, by filling a transparent resin between the cover glass and the image pickup device.

Abstract: A method of manufacturing a semiconductor device includes: forming, on a cover glass, a film having a predetermined specific gravity and configured to shield an alpha ray that arises from the cover glass; and bonding the cover glass on which the film is formed and an image pickup device, by filling a transparent resin between the cover glass and the image pickup device.

Abstract: There is provided a semiconductor device including a semiconductor layer, a protective layer including a transparent material, and a transparent resin layer that seals a gap between the semiconductor layer and the protective layer. A chip prevention member with a higher Young's modulus than the transparent resin layer is formed to come into contact with the semiconductor layer in a dicing portion of a layer structure before fragmentation, and dicing is performed in the dicing portion for the fragmentation.

Abstract: An imaging apparatus includes: a lens unit for focusing light; at least three image sensors for performing photoelectric conversion; and a light-splitting unit for splitting the light from the lens unit into at least three light branches. Each light branch corresponds to a different image sensor. The light-splitting unit also guides the light branches to corresponding image sensors simultaneously.

Abstract: An image pickup apparatus includes an optical sensor including a light receiving unit, a sealing material configured to protect the optical sensor on a side of the light receiving unit, an intermediate layer formed at least between the light receiving unit and a first surface of the sealing material, the first surface being an opposed surface to the light receiving unit, and a control film configured to cause a cutoff wavelength to shift to a short wave side in accordance with an incident angle of light that is incident thereon obliquely, in which the control film includes a first control film formed on the first surface of the sealing material, the first surface being the opposed surface to the light receiving unit, and a second control film formed on a second surface of the sealing material, the second surface being opposite to the first surface.

Abstract: A solid-state imaging device includes: an optical filter in which a filter layer is formed on a transparent substrate; a solid-state imaging component that is arranged to be opposed to the optical filter and in which plural pixels that receive light made incident via the filter layer are arrayed in a pixel area of a semiconductor substrate; and a bonding layer that is provided between the optical filter and the solid-state imaging component and sticks the optical filter and the solid-state imaging component together.

Abstract: A method of manufacturing a semiconductor device includes: forming, on a cover glass, a film having a predetermined specific gravity and configured to shield an alpha ray that arises from the cover glass; and bonding the cover glass on which the film is formed and an image pickup device, by filling a transparent resin between the cover glass and the image pickup device.

Abstract: There is provided a semiconductor device including a semiconductor layer, a protective layer including a transparent material, and a transparent resin layer that seals a gap between the semiconductor layer and the protective layer. A chip prevention member with a higher Young's modulus than the transparent resin layer is formed to come into contact with the semiconductor layer in a dicing portion of a layer structure before fragmentation, and dicing is performed in the dicing portion for the fragmentation.

Abstract: An imaging device includes: an optical sensor including a light receiving unit capable of forming an object image; a seal material for protecting the light receiving unit of the optical sensor; an intermediate layer formed at least between the light receiving unit and an opposite surface of the seal material facing the light receiving unit; and a control film arranged between the intermediate layer and the opposite surface of the seal material, wherein, in the control film, a cutoff wavelength is shifted to a shortwave side in accordance with an incident angle of light which is obliquely incident on the film.

Abstract: An image pickup apparatus includes an optical sensor including a light receiving unit, a sealing material configured to protect the optical sensor on a side of the light receiving unit, an intermediate layer formed at least between the light receiving unit and a first surface of the sealing material, the first surface being an opposed surface to the light receiving unit, and a control film configured to cause a cutoff wavelength to shift to a short wave side in accordance with an incident angle of light that is incident thereon obliquely, in which the control film includes a first control film formed on the first surface of the sealing material, the first surface being the opposed surface to the light receiving unit, and a second control film formed on a second surface of the sealing material, the second surface being opposite to the first surface.

Abstract: An imaging device includes: an optical sensor including a light receiving unit capable of forming an object image; a seal material for protecting the light receiving unit of the optical sensor; an intermediate layer formed at least between the light receiving unit and an opposite surface of the seal material facing the light receiving unit; and a control film arranged between the intermediate layer and the opposite surface of the seal material, wherein, in the control film, a cutoff wavelength is shifted to a shortwave side in accordance with an incident angle of light which is obliquely incident on the film.

Abstract: A solid-state imaging device includes: an optical filter in which a filter layer is formed on a transparent substrate; a solid-state imaging component that is arranged to be opposed to the optical filter and in which plural pixels that receive light made incident via the filter layer are arrayed in a pixel area of a semiconductor substrate; and a bonding layer that is provided between the optical filter and the solid-state imaging component and sticks the optical filter and the solid-state imaging component together.

Abstract: Disclosed is an image pickup device which makes it possible to reduce the number of parts, to achieve a reduction in assembly man-hours, to meet the demand for a reduction in size, to facilitate the adjustment of the focal length, and to prevent the focal length from going out of adjustment after the adjustment of the focal length.

Abstract: A solid-state imaging device includes: an optical filter in which a filter layer is formed on a transparent substrate; a solid-state imaging component that is arranged to be opposed to the optical filter and in which plural pixels that receive light made incident via the filter layer are arrayed in a pixel area of a semiconductor substrate; and a bonding layer that is provided between the optical filter and the solid-state imaging component and sticks the optical filter and the solid-state imaging component together.