Abstract: Microelectronic devices—having at least one conductive contact structure adjacent a silicide region—are formed using methods that avoid unintentional contact expansion and contact reduction. A first metal nitride liner is formed in a contact opening, and an exposed surface of a polysilicon structure is thereafter treated (e.g., cleaned and dried) in preparation for formation of a silicide region. During the pretreatments (e.g., cleaning and drying), neighboring dielectric material is protected by the presence of the metal nitride liner, inhibiting expansion of the contact opening. After forming the silicide region, a second metal nitride liner is formed on the silicide region before a conductive material is formed to fill the contact opening and form a conductive contact structure (e.g., a memory cell contact structure, a peripheral contact structure).

Abstract: Microelectronic devices—having at least one conductive contact structure adjacent a silicide region—are formed using methods that avoid unintentional contact expansion and contact reduction. A first metal nitride liner is formed in a contact opening, and an exposed surface of a polysilicon structure is thereafter treated (e.g., cleaned and dried) in preparation for formation of a silicide region. During the pretreatments (e.g., cleaning and drying), neighboring dielectric material is protected by the presence of the metal nitride liner, inhibiting expansion of the contact opening. After forming the silicide region, a second metal nitride liner is formed on the silicide region before a conductive material is formed to fill the contact opening and form a conductive contact structure (e.g., a memory cell contact structure, a peripheral contact structure).

Abstract: Microelectronic devices—having at least one conductive contact structure adjacent a silicide region—are formed using methods that avoid unintentional contact expansion and contact reduction. A first metal nitride liner is formed in a contact opening, and an exposed surface of a polysilicon structure is thereafter treated (e.g., cleaned and dried) in preparation for formation of a silicide region. During the pretreatments (e.g., cleaning and drying), neighboring dielectric material is protected by the presence of the metal nitride liner, inhibiting expansion of the contact opening. After forming the silicide region, a second metal nitride liner is formed on the silicide region before a conductive material is formed to fill the contact opening and form a conductive contact structure (e.g., a memory cell contact structure, a peripheral contact structure).

Abstract: A pair of wiring structures 9 and 9 configured to transmit a control signal from an operating switch on an upper portion of a shift lever 3 to a vehicle body side respectively include connection terminals 91 to be attached to a framework portion of a knob 4. Each connection terminal 91 includes: a connecting portion 93 on an end of the connection terminal 91, the connecting portion 93 being connectable to an opponent terminal; a hook portion 95 to which an end portion 90a of a lead wire 90 is to be fixed, the hook portion 95 located on another end of the connection terminal 91; and an insertion portion 92 and a position regulating portion 94 between the connecting portion 93 and the hook portion 95, the insertion portion 92 being inserted into an insertion hole in a bracket 50, the position regulating portion 94 being configured to regulate a position of the insertion portion 92 in the inserting direction.

Abstract: Provided is a method for manufacturing a semiconductor device comprising: a process of forming a first trench 101 in insulating material layer 100 formed on a semiconductor substrate, wherein the first trench has an upper width W2 larger than an lower width W1, and is extended in a first direction; a process of forming embedded layer 102 within the first trench 101, wherein the embedded layer has a height lower than the top of the trench; a process of forming side-walls 103 to cover wall surfaces of the first trench 101 exposed on embedded layer 102; and a process of etching embedded layer 102 using side-wall 103 as a mask to separate the embedded layer in the first direction.

Abstract: A method of removing a multi-layered structure includes the following processes. A semiconductor substrate is prepared. The semiconductor substrate has a multi-layered structure including a first film over the semiconductor substrate, a second film on the first film, and a mask pattern film on the second film. Then, the mask pattern film is removed. Then, the second film is removed by etching the second film with a first etching selectivity of the second film to the first film. The first etching selectivity is greater than a second etching selectivity of the second film to the first film with which the second film is patterned by etching using the mask pattern film. Then, the third film is removed.

Abstract: A method for manufacturing a semiconductor device includes the steps of forming an interconnection layer including a top tungsten layer, forming a mask pattern on the tungsten layer, nitriding a portion of the tungsten layer in a plasma nitriding process to form a tungsten nitride layer, etching the tungsten nitride layer while leaving the mask pattern on the tungsten layer, and patterning the interconnection layer by using the mask pattern as an etching mask.

Abstract: A method for manufacturing a semiconductor device includes the steps of forming an interconnection layer including a top tungsten layer, forming a mask pattern on the tungsten layer, nitriding a portion of the tungsten layer in a plasma nitriding process to form a tungsten nitride layer, etching the tungsten nitride layer while leaving the mask pattern on the tungsten layer, and patterning the interconnection layer by using the mask pattern as an etching mask.