Patents by Inventor Tak Seng Thang

Tak Seng Thang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10002988
    Abstract: A semiconductor light-emitting device includes a semiconductor structure having a light-emitting region. A surface of the semiconductor structure has flattened peaks.
    Type: Grant
    Filed: September 22, 2016
    Date of Patent: June 19, 2018
    Assignee: Lumileds LLC
    Inventors: Yiwen Rong, James Gordon Neff, Tak Seng Thang
  • Publication number: 20170012170
    Abstract: A semiconductor light-emitting device includes a semiconductor structure having a light-emitting region. A surface of the semiconductor structure has flattened peaks.
    Type: Application
    Filed: September 22, 2016
    Publication date: January 12, 2017
    Inventors: Yiwen Rong, James Gordon Neff, Tak Seng Thang
  • Patent number: 9484497
    Abstract: A semiconductor light-emitting device includes a semiconductor structure having a light-emitting region. A surface of the semiconductor structure has flattened peaks.
    Type: Grant
    Filed: October 11, 2015
    Date of Patent: November 1, 2016
    Assignee: Koninklijke Philips N.V.
    Inventors: Yiwen Rong, James Gordon Neff, Tak Seng Thang
  • Publication number: 20160072014
    Abstract: A semiconductor light-emitting device includes a semiconductor structure having a light-emitting region. A surface of the semiconductor structure has flattened peaks.
    Type: Application
    Filed: October 11, 2015
    Publication date: March 10, 2016
    Inventors: Yiwen Rong, James Gordon Neff, Tak Seng Thang
  • Patent number: 9159876
    Abstract: A method according to embodiments of the invention includes roughening (FIG. 6) a surface (58) of a semiconductor structure (46-48, FIG. 5). The semiconductor structure includes a light emitting layer (47). The surface (58) is a surface from which light is extracted from the semiconductor structure. After roughening, the roughened surface is treated (FIG. 7) to increase total internal reflection, or absorption at the surface, or to reduce an amount of light extracted from the semiconductor structure through the surface (58).
    Type: Grant
    Filed: October 1, 2012
    Date of Patent: October 13, 2015
    Assignee: Koninklijke Philips N.V.
    Inventors: Yiwen Rong, James Gordon Neff, Tak Seng Thang
  • Publication number: 20140235002
    Abstract: A method according to embodiments of the invention includes roughening (FIG. 6) a surface (58) of a semiconductor structure (46-48, FIG. 5). The semiconductor structure includes a light emitting layer (47). The surface (58) is a surface from which light is extracted from the semiconductor structure. After roughening, the roughened surface is treated (FIG. 7) to increase total internal reflection, or absorption at the surface, or to reduce an amount of light extracted from the semiconductor structure through the surface (58).
    Type: Application
    Filed: October 1, 2012
    Publication date: August 21, 2014
    Inventors: Yiwen Rong, James Gordon Neff, Tak Seng Thang