Abstract: Disclosed are embodiments of a method and apparatus for avoiding cell data destruction caused by cell stability problems in static random access memory (SRAM) cells. In one embodiment, data inside of an SRAM cell is transferred to one of its bitline in advance of an actual Read/Write operation utilizing a transfer device controlled by a pre-read signal. In one embodiment, the read and write bitlines are shared and the transfer device and pr are not needed. Since the bitline voltage has already been changed to the state which reflects the cell data in advance, the memory cells remains relatively stable. By shifting the bitline voltage before the wordline is turned on, the accessed cell is relieved from the stress which would have otherwise caused cell stability problems.