Abstract: Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using BInGaAlN material system of a first conduction type formed substantially without phase separation, and a quaternary or pentenary material active layer using BInGaAlN material system substantially without phase separation, and a third ternary, quaternary or pentenary material layer using BInGaAlN material system of an opposite conduction type formed substantially without phase separation.

Abstract: An ECU includes a microcomputer that has an integrated flash memory. An initial writing flag is set in the microcomputer before an initial writing to the flash memory. The microcomputer enters into a writing mode when the flag determines permission of data writing. When the data-writing to the flash memory is completed, the flag is cleared.

Abstract: Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using BInGaAlN material system of a first conduction type formed substantially without phase separation, and a quaternary or pentenary material active layer using BInGaAlN material system substantially without phase separation, and a third ternary, quaternary or pentenary material layer using BInGaAlN material system of an opposite conduction type formed substantially without phase separation.

Abstract: Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using BlnGaAlN material system of a first conduction type formed substantially without phase separation, and a quaternary or pentenary material active layer using BlnGaAlN material system substantially without phase separation, and a third ternary, quaternary or pentenary material layer using BlnGaAlN material system of an opposite conduction type formed substantially without phase separation.

Abstract: An ECU includes a microcomputer that has an integrated flash memory. An initial writing flag is set in the microcomputer before an initial writing to the flash memory. The microcomputer enters into a writing mode when the flag determines permission of data writing. When the data-writing to the flash memory is completed, the flag is cleared.

Abstract: A group III-nitride quaternary material system and method is disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduces or eliminates phase separation and provides increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first InGaAlN layer of a first conduction type formed substantially without phase separation, an InGaAlN active layer substantially without phase separation, and a third InGaAlN layer of an opposite conduction type formed substantially without phase separation.

Abstract: Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using an InGaAlNAs material system of a first conduction type formed substantially without phase separation, a quaternary or pentenary material active layer using an InGaAlNAs material system substantially without phase separation, and a third ternary, quaternay or pentenary an InGaAlNAs material system of an opposite conduction type formed substantially without phase separation.

Abstract: Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduces or eliminates phase separation and provides increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using an InGaAlNP layer of a first conduction type formed substantially without phase separation, a quaternary or pentenary material active layer using an InGaAlNP active layer substantially without phase separation, and a third ternary, quaternary or pentenary InGaAlNP material layer of an opposite conduction type formed substantially without phase separation.

Abstract: A light emitting diode structure capable of use within a flat panel device with small thickness and large area size. In some embodiments, the LED structure is combined with phosphors to generate light of varying chrominance and luminance including white and other visible spectrum light, and may be used to provide either ambient or accent illumination. The flat panel light source comprises a first GaN cladding layer of a first conductance type, a second GaN cladding layer of a second conductance type formed on the first layer and having at least one window region formed on the first cladding layer, an InxGa1−xN active layer and a third cladding layer of an opposite conduction type formed on the second cladding layer. One or more phosphor layers for converting light of a first wavelength to light of a second wavelength may be added to provide polychromatic emissions.

Abstract: The method provides object recognition procedure and a neural network by using the discrete-cosine transform (DCT) (4) and histogram adaptive quantization (5). The method employs the DCT transform with the added advantage of having a computationally-efficient and data-independent matrix as an alternative to the Karhunen-Loeve transform or principal component analysis which requires data-independent eigenvectors as a priori information. Since the set of learning samples (1) may be small, we employ a mixture model of prior distributions for accurate estimation of local distribution of feature patterns obtained from several two dimensional images. The model selection method based on the mixture classes is presented to optimize the mixture number and local metric parameters. This method also provides image synthesis to generate a set of image databases to be used for training a neural network.

Abstract: A group III-nitride quatenary material system and method is disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduces or eliminates phase separation and provides increased emission efficiency and reliability. In an exemplary embodiment the semiconductor structure includes first GaAINAs layer of a first conduction type formed substantially without phase separation, an GaAINAs active layer substantially without phase separation, and a third GaAINAs layer of an opposite conduction type formed substantially without phase separation.

Abstract: The object of the present invention is to form a cubic nitride semiconductor layer of excellent surface flatness and crystallization on a cubic III-V family compound semiconductor substrate, featuring a fabrication method that comprises the steps of forming a cubic semiconductor layer 2 containing aluminum, nitriding one surface of the semiconductor layer 2 by heating in an atmosphere of a nitrogen compound and then supplying a nitrogen compound and a compound containing III family elements to form a cubic nitride semiconductor layer 3 on the semiconductor layer 2.

Abstract: With an object of providing gallium nitride thick film crystals excelling in crystallization, the structure thereof is formed of an amorphous silicon dioxide thin film 2 formed on a silicon substrate 1 and then a single crystal silicon thin film 3 is formed on the foregoing amorphous silicon dioxide thin film 2 and further gallium nitride 4 is formed on this silicon thin film 3.

Abstract: The method of forming gallium nitride crystal comprises the following three steps: the first step of heating a silicon substrate 1 in gas atmosphere including gallium, the second step of forming the first gallium nitride 3 on the silicon substrate 1, the third step of forming the second gallium nitride 4 on the first gallium nitride 3 at the higher temperature than when the first gallium nitride 3 has been formed. The method including these three steps can produce a thick film crystal of gallium nitride having excellent flatness and crystallinity.

Abstract: To present a manufacturing method of semiconductor device capable of forming a homogeneous and highly reproducible gallium nitride crystal, comprising the steps of forming a zinc oxide layer on a monocrystalline substrate, forming a first gallium nitride crystal in a temperature range from 0.degree. C. to 900.degree. C., and forming a second gallium nitride crystal in a temperature range from 900.degree. C. to 2000.degree. C.

Abstract: To reduce a dislocation density within a gallium nitride crystal and make cleaving possible, after forming a thin film of silicon carbide and a first gallium nitride crystal on a silicon substrate, only the silicon substrate is removed in an acid solution such as hydrofluoric acid and nitric acid as they are mixed. Following this, a second gallium nitride crystal is formed on the remaining thin film of silicon carbide and the first gallium nitride crystal.

Abstract: A prolonged releasing pharmaceutical preparation is provided carrying a physiologically active substance, particularly, calcitonin gene-related peptide (CGRP) or a maxadilan (MAX). This pharmaceutical preparation can attain the expected effects by incorporating the physiologically active substance into a combination, as carriers for the physiologically active substance, of a cellulosic polymer and at least one auxiliary component selected from the group consisting of fats and oils, waxes, fatty acids, saccharides and polyacrylate ester derivatives. The pharmaceutical preparation can conveniently be used, in living bodies, particularly as an intrathecal implantation-type preparation.

Abstract: Disclosed is a battery disconnection detecting apparatus which can accurately detect whether or not the interruption of electric power supply from a battery to a storage device is continuously caused by the disconnection of an electric power line, or the like. The voltage of a battery is continuously supplied to a backup RAM through a second electric power line. An EEP-ROM is provided which can hold the stored data even when electric power supply is interrupted. When a power switch is turned ON, and an ECU is operative, a CPU detects the interruption of the electric power supply through the second electric power line based on the state of a standby bit. After detecting the interruption of the electric power supply, the CPU makes the count of the counter in the EEP-ROM count up. When the count reaches or exceeds the preset number n, i.e.

Abstract: A control system with an abnormality detecting device for use in a motor vehicle. The control system comprises a microcomputer coupled through a switching circuit and an analog-to-digital converter to a sensor for sensing an operating state of the motor vehicle and also to a reference voltage generating circuit. The switching circuit performs a switching operation between an analog signal from the sensor and a predetermined reference voltage signal from the reference voltage generating circuit to supply the analog-to-digital converter with one of the analog signals which is analog-to-digital-converted in the analog-to-digital converter.

Abstract: A self-diagnosis system for the exhaust gas recirculation control system of an internal combustion engine comprises a recirculation pipe for returning the exhaust gas to the intake manifold, switching unit for opening or closing the recirculation pipe, control unit for controlling the switching operation of the switching unit, operating conditions detector for detecting the operating conditions of the engine, storage unit for storing the detection values of the detector separately when the switching unit opens and closes, decision unit supplied with the detection values from the storage unit for deciding whether the difference therebetween is in a predetermined range, and an alarm unit for issuing an alarm when the decision unit decides that the difference of the detection values is in the predetermined range, thus making stable self-diagnosis possible with a simple configuration.